1、Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1By D. A. Neamen Problem Solutions_1Chapter 1Problem Solutions1.1(a) fcc: 8 corner atoms atom18/6 face atoms atoms32Total of 4 atoms per unit cell(b) bcc: 8 corner atoms atom/1 enclosed atom =1 atomTotal of 2 atoms per unit cel
2、l(c) Diamond: 8 corner atoms atom18/6 face atoms atoms324 enclosed atoms = 4 atomsTotal of 8 atoms per unit cell_1.2(a) Simple cubic lattice: ra2Unit cell vol 3381 atom per cell, so atom vol 41ThenRatio %4.5210834r(b) Face-centered cubic latticerdad24Unit cell vol 3332164 atoms per cell, so atom vol
3、 4rThenRatio %7410263r(c) Body-centered cubic latticerad34Unit cell vol 342 atoms per cell, so atom vol 32rThenRatio %68103423r(d) Diamond latticeBody diagonal rard388Unit cell vol 33a8 atoms per cell, so atom vol 348rThenRatio %4103843r_1.3(a) ; From Problem 1.2d, oAa43.5ra38Then oAr176.83.Center o
4、f one silicon atom to center of nearest neighbor or5.2(b) Number density cm38104.53(c) Mass density23.69.85.ANWtgrams/cm3.23_Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1By D. A. Neamen Problem Solutions_21.4(a) 4 Ga atoms per unit cellNumber density 381065.4Density of G
5、a atoms cm2.34 As atoms per unit cellDensity of As atoms cm(b) 8 Ge atoms per unit cellNumber density 381065.Density of Ge atoms cm24.3_1.5From Figure 1.15(a) aad430.2oAd7.2650(b) aad712o95.3_1.674.5232sina5.109_1.7(a) Simple cubic: oAra9.32(b) fcc: 51.4(c) bcc: or0.3(d) diamond: Aa7.942_1.8(a) Br20
6、35.12035.1oBAr487(b) oAa07.235.1(c) A-atoms: # of atoms 18Density 3107.2cmB-atoms: # of atoms 26Density 38107.2cm_1.9(a)oAra5.42# of atoms 18Number density 3805.4cm2197Mass density ANWt.2310.65.4gm/cm8(b)ora19.534# of atoms 28Number density 381096.5cm247Mass density 3.5.gm/cm96.0_1.10From Problem 1.
7、2, percent volume of fcc atoms is 74%; Therefore after coffee is ground,Volume = 0.74 cm 3_Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1By D. A. Neamen Problem Solutions_31.11(b)oAa8.201.(c) Na: Density 381./cm203Cl: Density cm2.(d) Na: At. Wt. = 22.99Cl: At. Wt. = 35.45
8、So, mass per unit cell23231085.410.6.92Then mass densitygrams/cm.8.5433_1.12(a) oAa8.12.3Then o64Density of A: cm2380.102.3Density of B:cm2381.6.43(b) Same as (a)(c) Same material_1.13oAa619.4382.(a) For 1.12(a), A-atomsSurface density 2820.acm14687For 1.12(b), B-atoms: oA9.Surface density cm1420a2F
9、or 1.12(a) and (b), Same material(b) For 1.12(a), A-atoms; oAa619.4Surface densitycm21035.2B-atoms;Surface densitycm142.a2For 1.12(b), A-atoms; oA69.Surface density cm21a14035.2B-atoms;Surface densitycm142.2For 1.12(a) and (b), Same material_1.14(a) Vol. Density 31oaSurface Density 2o(b) Same as (a)
10、_1.15(i) (110) plane(see Figure 1.10(b)(ii) (111) plane(see Figure 1.10(c)(iii) (220) plane 0,1,21Same as (110) plane and 110 direction(iv) (321) plane 6,3,3Intercepts of plane at6,2sqp321 direction is perpendicular to(321) plane_Semiconductor Physics and Devices: Basic Principles, 4th edition Chapt
11、er 1By D. A. Neamen Problem Solutions_41.16(a) 31,1(b)24,_1.17Intercepts: 2, 4, 3 31,42(634) plane_1.18(a)oAad28.5(b) 734(c)o0._1.19(a) Simple cubic(i) (100) plane:Surface density 2821073.4acm(ii) (110) plane:Surface density 2acm1406.32(iii) (111) plane:Area of plane bh2where oAa689.Now 2222 43ahSo
12、oA79.5.46Area of plane 88107934.510692. cm6372Surface density 1605.9cm4822(b) bcc(i) (100) plane:Surface density cm14207.1a2(ii) (110) plane:Surface density 2cm1403.62(iii) (111) plane:Surface density 1675.9cm40822(c) fcc(i) (100) plane:Surface density cm1429.a2(ii) (110) plane:Surface density 2cm14
13、03.62(iii) (111) plane:Surface density 1675.9cm0312_1.20(a) (100) plane: - similar to a fcc:Surface density 281043.5cm76(b) (110) plane:Surface density 281043.52cm9Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1By D. A. Neamen Problem Solutions_5(c) (111) plane:Surface den
14、sity 281043.52cm87_1.21oAra703.62.4(a) #/cm 3 3831.481acm20.3(b) #/cm 2412a1073.628cm4(c)oAad72(d) # of atoms 2136Area of plane: (see Problem 1.19)oAab4786.9h20Area 8819.1476.921bcm50832#/cm 2159.= cm402oAad87.37.63_1.22Density of silicon atoms cm and210534 valence electrons per atom, soDensity of v
15、alence electrons cm_1.23Density of GaAs atomscm238104.1065.3An average of 4 valence electrons per atom, SoDensity of valence electrons cm23107._1.24(a) %10105327(b) 46_1.25(a) Fraction by weight721610542.0.85(b) Fraction by weight521.6.93_1.26Volume density cm16302d3So cm 6184.doA4.8We have ooAa5Then .73._1.27Volume density cm15304d3So cm 610.doAWe have ooa5Then 43._
