1、1.FEATURES2.DEVICE MARKING AND ORDERING INFORMATION3.MAXIMUM RATINGS(Ta=25 C)TC=25 C TC=100 C 4.THERMAL CHARACTERISTICSTotal Device Dissipation,Derate above 25 CThermal Resistance,Junction and Storage temperature1.Pulse Test:Pulse Width 2.0%.+150PD 1.8556 C/WC 115 75IDM 800VGS 20Parameter Symbol Lim
2、itsDevice VDGR 60Unit VDSSMarking Shipping6C 3000/Tape&ReelDrain Current IDVdcVdcmAdcParameter Symbol Limits60 VGSM 40 VdcVdcTJ,TstgUnit225 mWmW/C SC70(SOT-323)Rev:01.06.2015 1/6SN7002WSN7002WWe declare that the material of product compliance withRoHS requirements and Halogen Free.ESD Protected:1000
3、V5.ELECTRICAL CHARACTERISTICS(Ta=25C)OFF CHARACTERISTICSCharacteristic Zero Gate Voltage Drain Current TJ=25 C(VGS=0,VDS=60 Vdc)TJ=125 C(VGS=20 Vdc)(VGS=-20 Vdc)ON CHARACTERISTICS(Note 3)Gate Threshold Voltage(VDS 2.0 VDS(on),VGS=10 Vdc)(VGS=10 Vdc,ID=500 mAdc)(VGS=5.0 Vdc,ID=50 mAdc)(VGS=10 Vdc,ID=
4、500 mAdc)TC=25 C TC=125 C(VGS=5.0 Vdc,ID=50 mAdc)TC=25 C TC=125 CForward Transconductance(VDS 2.0 VDS(on),ID=200 mAdc)DYNAMIC CHARACTERISTICSInput Capacitance(VDS=25 Vdc,VGS=0,f=1.0 MHz)Output Capacitance(VDS=25 Vdc,VGS=0,f=1.0 MHz)Reverse Transfer Capacitance(VDS=25 Vdc,VGS=0,f=1.0 MHz)SWITCHING CH
5、ARACTERISTICS(IS=115 mAdc,VGS=0 V)Source Current Continuous(Body Diode)Source Current Pulsed3.Pulse Test:Pulse Width 2.0%.-800-115ISM mAdc5.0pFVGS(th)IDSSgfsmmhos80-IS mAdc-pFpFCibo-17 50CoboCibo-10 25-2.5IGSSF-1.0Typ.Max.IGSSR-1.0VBRDSSVdc60-Symbol Min.Ohms-VdcUnit1.0VdcmA5001.4 7.5-13.52.5-13.51.8
6、 7.51.6-3.750.375RDS(on)-1.0ID(on)500VDS(on)-Turn-On Delay Time(VDD=25 Vdc,ID=500 Turn-Off Delay Timetd(off)td(on)VSDVdc-1.5ns-11 40-7 20Rev:01.06.2015 2/6SN7002W6.ELRCTRICAL CHARACTERISTICS CURVES0123456780 0.05 0.1 0.15 0.2RDS(on),ON-Resistance(ID,Drain Current(A)VGS=5V 150 25-55 85 0123456780 0.0
7、5 0.1 0.15 0.2RDS(on),ON-Resistance(ID,Drain Current(A)VGS=10V 150 25-55 85 00.20.40.60.811.20 2 4 6 8 10ID,Drain Current(A)VGS,Gate-to-Source Voltage(V)150 25-55 00.40.81.21.60 1 2 3 4 5 6ID,Drain Current(A)VDS,Drain-to-Source Voltage(V)VGS=3V VGS=2.5V VGS=4V VGS=3.5V VGS=4.5V VGS=5V VGS=6V VGS=7,8
8、,9,10V Transfer Characteristcs ON-Region Characteristics RDS(on)vs.ID RDS(on)vs.ID Rev:01.06.2015 3/6SN7002W6.ELRCTRICAL CHARACTERISTICS CURVES（Con.)00.511.522.5-50 0 50 100 150RDS(on),ON_Region reisistance(normallized)Temperataure()VGS=10V VGS=5V 0123456789102 4 6 8 10RDS(on),ON-Resistance(）VGS,Gat
9、e-to-Source Voltage(V)ID=500mA ID=200mA 051015202530350 5 10 15 20 25 30C,Capacitor(Pf)VDS,Drain-to-Source Voltage(V)VGS=0V Ciss Coss Crss 0.010.11100.4 0.5 0.6 0.7 0.8 0.9 1IS,Source Current(A)VSD,Source-to-Drain Voltage(V)VGS=0V 85 25 RDS(on)vs.VGS RDS(on)vs.Temperature Capacitor vs.VDS IS vs.VSD
10、Rev:01.06.2015 4/6SN7002W6.ELRCTRICAL CHARACTERISTICS CURVES（Con.)00.20.40.60.811.21.4-50 0 50 100 150VGS(th),Threshold Voltage(normallized)Temperature(）ID=250uA 1.0E-101.0E-091.0E-081.0E-071.0E-060 10 20 30 40 50 60IDS,Idss Leakage(A)VDS,Drain-to-Source Voltage(V)VGS=0 150 125 25 85 VGS(th)vs.Tempe
11、rature IDS vs.VDS Rev:01.06.2015 5/6SN7002W SN7002W7.OUTLINE AND DIMENSIONS Notes:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M,1982.2.CONTROLLING DIMENSION:MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH.MINIMUM LEAD THICKNESS IS THE MINIMUMTHICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E D
12、O NOT INCLUDE MOLDFLASH,PROTRUSIONS OR GATE BURRS.8.SOLDERING FOOTPRINT2.10 2.20 0.071 0.083 0.0870.0040.30 0.35 0.40 0.012 0.014 0.0160.007 0.010 0.18 0.25 0.0040.70REF 0.028REF1.00 0.032 0.035 0.039A2A1DMIN NOM MAX MIN NOM0.00 0.05 0.10 0.000 0.002cDIMMILLIMETERS INCHES0.80 0.90b0.10MAXA1.801.15 1.24 1.35 0.045 0.049 0.053L 0.20 0.38 0.56 0.008 0.015 0.022Eee11.20 1.30 1.40 0.047 0.051 0.0550.65REF 0.026REFHE2.00 2.10 2.40 0.079 0.083 0.095Shanghai Leiditech Electronic Co.,Ltd Email:Tel:+86-021 50828806 Fax:+86-021 50477059 Rev:01.06.2015 6/6SN7002W
