1、 查看文章 OrCAD PSpice DIODE model parameter2010-07-15 22:311.从 OrCAD PSpice help文档：2.国外网站的相关介绍：SPICE Diode Model Parametersname parameter units default example area1 IS saturation current A 1.0e-14 1.0e-14 *2 RS ohmic resistanc Ohm 0 10 *3 N emission coefficient - 1 1.04 TT transit-time sec 0 0.1ns5 CJ
2、O zero-bias junction capacitance F 0 2pF *6 VJ junction potential V 1 0.67 M grading coefficient - 0.5 0.58 EG band-gap energy eV 1.11 1.11 Si9 XTI saturation-current temp.exp - 3.0 3.0 pn 2.0 Schottky10 KF flicker noise coefficient - 011 AF flicker noise exponent - 112 FC coefficient for forward-bi
3、as depletion capacitance formula - 0.513 BV reverse breakdown voltage V infinite 40.014 IBV current at breakdown voltage V 1.0e-315 TNOM parameter measurement temperature deg C 27 50The DC characteristics of the diode are determined by the parameters IS, N, and the ohmic resistance RS. Charge storag
4、e effects are modeled by a transit time, TT, and a nonlinear depletion layer capacitance which is determined by the parameters CJO, VJ, and M. The temperature dependence of the saturation current is defined by the parameters EG, the band gap energy and XTI, the saturation current temperature exponen
5、t. The nominal temperature at which these parameters were measured is TNOM, which defaults to the circuit-wide value specified on the .OPTIONS control line. Reverse breakdown is modeled by an exponential increase in the reverse diode current and is determined by the parameters BV and IBV (both of wh
6、ich are positive numbers).3. 国外网站关于 PSpice 其它模型的参数介绍：如（三极管，达林顿管，场效应管，二极管）Spice models Introduction The MOD model file The ZMODELS.LIB library file Model parameters and limitations o Bipolars o Darlingtons o MOSFETs o Diodes Further information IntroductionZetex have created Spice models for a range
7、of semiconductor components. Models included are Schottky and varicap, high-performance bipolar (high current, low VCE(sat), higher voltage bipolar, bipolar Darlington and MOSFET transistors. This range is continuously under review as new products are introduced and retrospective models are generate
8、d for existing products.The Spice models are available in two formats:1. A separate Spice model text file for each Zetex device type for which a model is presently available. These can be accessed from the Product Quickfinder 2. All the available Zetex device models are collected together into a sin
9、gle .LIB text file called ZMODELS.LIB. A generic symbol library file is available called ZETEXM.SLB that enables Windows versions of PSpice to use the Zetex spice models. Further information on the symbol library, including installation instructions will be found in the text file called ZETEXM.TXTTh
10、e MOD Model FileEach of these files is a Spice model for a single device. They can be loaded into your simulation simply by employing the Spice command . Only the device types specifically required by the circuit under simulation need be included in this way. All diode and bipolar transistor models
11、are simple files. However, Darlington transistors and MOSFET models are multi-component subcircuits and as such are supplied as files.The diode models should be included in circuit files using the normal Spice reference .Bipolar transistor models should be included using .All other models should be
12、referenced as subcircuits i.e. in the form for Darlington transistors, and for MOSFETs.The ZMODELS.LIB Library FileUsers may prefer to use the model library. This library is a collection of all Zetex Spice models exactly as they appear in the individual model files. By using the statement , Spice wi
13、ll be able to access any model within the library without the need for multiple statements.Note:All subcircuits, whether in the library or as individual model files use the same connection sequence as Spice for single element models, thus easing their use.Model parameters and limitations Bipolars Da
14、rlingtons MOSFETs Diodes BipolarsAll bipolar transistor and Darlington models are based on Spices modified Gummel-Poon model. A typical model for a single transistor is shown as follows:*Zetex FMMT493A Spice Model v1.0 Last Revised 30/3/06*.MODEL FMMT493A NPN IS =6E-14 NF =0.99 BF =1100 IKF=1.1+NK=0
15、.7 VAF=270 ISE=0.3E-14 NE =1.26 NR =0.98 BR =70 IKR=0.5+VAR=27 ISC=1.2e-13 NC =1.2 RB =0.2 RE =0.08 RC =0.08 RCO=8+GAMMA=5E-9 CJC=15.9E-12 MJC=0.4 VJC=0.51 CJE=108E-12+MJE=0.35 VJE=0.7 TF =0.8E-9 TR =55e-9 XTB=1.4 QUASIMOD=1*In the bipolar model: IS and NF control Icbo and the value of Ic at medium
16、bias levels. ISE and NE control the fall in hFE that occurs at low Ic. BF controls peak forward hFE and XTB controls how it varies with temperature. BR controls peak reverse hFE i.e. collector and emitter reversed. IKF and NK control the current and the rate at which hFE falls at high collector curr
17、ents. IKR controls where reverse hFE falls at high emitter currents. ISC and NC controls the fall of reverse hFE at low currents. RC, RB and RE add series resistance to these device terminals. VAF controls the variation of collector current with voltage when the transistor is operated in its linear
18、region. VAR is the reverse version of VAF. CJC, VJC and MJC control Ccb and how it varies with Vcb. CJE, VJE and MJE control Cbe Ccb and how it varies with Veb. TF controls Ft and switching speeds. TR controls switching storage times. RCO, GAMMA, QUASIMOD control the quasi-saturation region. Some st
19、andard bipolar transistor Spice models may not include a parameter that allows BF, the hFE parameter, to vary with temperature. If XTB is absent it defaults to zero, e.g. no temperature dependence. If hFE temperature effects are of interest and XTB is not modeled then the following values may be use
20、d to provide an estimate or a starting point for further investigation:Polarity XTBNPN 1.6PNP 1.9It is suggested that the appropriate datasheet hFE profile is examined, and a Spice test circuit created that simulates the device in question and generates a set of hFE curves. Two or three such iterati
21、ons should normally be sufficient to define a value for XTB in each case. Please remember that these notes are only a rough guide as to the effect of model parameters. Also, many of the parameters are interdependent so adjusting one parameter can affect many device characteristics.At Zetex, we have
22、endeavored to make the models perform as closely to actual samples as possible but some compromises are forced which can result in simulation errors under some circumstances. The main areas of error observed so far have been: Spice is often over optimistic in the hFE a transistor will give when oper
23、ated above its data sheet current ratings. This is particularly true for a high voltage transistor operated at a low collector-emitter voltage and quasi-saturation parameters RCO, GAMMA and QUASIMOD have been introduced to improve the models in this region. Spice can be pessimistic when predicting s
24、witching storage time when current is extracted from the base of a transistor to speed turn-off. DarlingtonsThese are subcircuits using a standard transistor model. A Darlington model is shown as follows:*Zetex FZT605 Spice Model v1.0 Last revision 27/04/05*.SUBCKT FZT605 1 2 3* C B EQ1 1 2 4 SUB605
25、Q2 1 4 3 SUB605 3.46*.MODEL SUB605 NPN IS=4.8E-14 BF=170 etc.ENDS FZT605*$Note:Because Zetex Darlingtons are monolithic, the two transistors used are identical in all respects other than size. (The number at the end of the Q2 line multiplies the size of the SUB605 transistor by 3.46 - the ratio of t
26、he areas of the input and output transistors for this device).MOSFETsNone of Spices standard MOSFET models fit the characteristics of trench or vertical MOSFETs too well. Consequently the models of MOSFETs supplied have been made using subcircuits that include additional components to improve simula
27、tion accuracy. A typical less complex MOSFET model is shown as follows:*ZETEX ZXMN3A14F Spice Model v1.0 Last revision 31/5/06*.SUBCKT ZXMN3A14F 30 40 50*-connections-D-G-SM1 6 2 5 5 Nmod L=1.16E-6 W=0.76M2 5 2 5 6 Pmod L=1.3E-6 W=0.35RG 4 2 4.5RIN 2 5 1E12RD 3 6 Rmod 0.04RS 5 55 Rmod 0.015RL 3 5 3E
28、9C1 2 5 8.5E-12C2 3 4 3E-12D1 5 3 DbodymodLD 3 30 0.5E-9LG 4 40 1.0E-9LS 55 50 1.0E-9.MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E16 VTO=2.13+KP=2.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10).MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16+TPG=-1 IS=1E-15 N=10).MODEL Dbodymod D (IS=6E-13 RS=.025 IK
29、F=0.1 TRS1=1.5e-3+CJO=150e-12 BV=33 TT=12e-9).MODEL Rmod RES (TC1=2.8e-3 TC2=0.8E-5).ENDS ZXMN3A14F*$*In the MOSFET model: L relates to a process parameter. W relates to a process parameter. TOX relates to a process parameter. NSUB relates to a process parameter. VTO defines Vgs(th). KP controls Gm.
30、 NFS fast surface state density. KAPPA saturation field factor. UO mobility. RS and RD add series terminal resistance with temperature characteristic modeled. IS and N suppress the behavior of the MOSFET models default body diode. CGDO, derived from process related parameters, controls Crss. CGSO, d
31、erived from process related parameters, controls Ciss. CBD, derived from process related parameters, controls Coss. In this trench MOSFET the NMOS models the walls of the trench and the PMOS models the bottom of the trench. Added to the Spice standard MOSFET models are a gate resistor to control swi
32、tching speeds, gate source and drain-source resistors to control leakage, drain and source series resistance, a drain-source diode to accurately reflect the performance of the MOSFETs body diode and inductors to model inductance inside the package.Recent MOSFET models mirror the performance of the r
33、eal devices reasonably well in most areas. One area not covered well by the older less complex models is the way that Crss and Coss vary with drain-source voltage. Thus if the less complex models are used at a drain-source voltage well away from datasheet capacitance definition voltages and capacita
34、nce is critical, then the values used for CGSO and CGDO may need adjustment.DiodesThe Tuner diode and Schottky Diode ranges use a standard Spice diode model and a typical file appears as follows:*Zetex ZC830A Spice Model v1.0 Last Revised 4/3/92*.MODEL ZC830A D IS=5.355E-15 N=1.08 RS=0.1161 XTI=3+ E
35、G=1.11 CJO=19.15E-12 M=0.9001 VJ=2.164 FC=0.5+ BV=45.1 IBV=51.74E-3 TT=129.8E-9+ ISR=1.043E-12 NR=2.01*NOTES: FOR RF OPERATION ADD PACKAGE INDUCTANCE 0F 2.5E-9H AND SET*RS=0.68 FOR 2V, 0.60 FOR 5V, 0.52 FOR 10V OR 0.46 FOR 20V BIAS.*$*In the diode model: IS controls forward and reverse current again
36、st voltage. N controls forward current against voltage. RS controls forward voltage at high current. CJO, M and VJ control variation of capacitance with voltage. BV and IBV control reverse breakdown characteristics. TT controls switching reverse recovery characteristics. ISR and NR control reverse b
37、iased leakage. EG controls barrier height. FC forward bias depletion capacitance coefficient. For operation at RF (which would be the norm for a varicap or tuner diode) it is recommended that a 2.5nH series inductor be added as an extra circuit element to correct for the inherent package inductance, this value will change with package size.Also for some models data is available to enable the RS parameter better model Q at voltages other than the specified condition.索取相关资料 & 与我讨论博主联系方式：
