1、晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to any other format without prior permissi
2、on of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 1 of 21标准书Specification制订部门Written byDepartment撰写者 / 日期Written by / Date审核者 / 日期Reviewed by / Date核准者 / 日期Approved by / Date晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station P
3、arameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to any other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 2 of 21工程部 谢红梅晶方半导体科
4、技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to any other format without prior permission of
5、China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 3 of 21文件变更履历页Document Change History版次 Rev.撰写者Originator变更内容简述Change Description变更依据文件号码DCN #生效日期Eff. DateA001 谢红梅 New Release接续页 CONTINUATION-是 YES；否 NO 晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A00
6、1溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to any other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.
7、Page 4 of 211.0 目的 Purpose:根据不同的制程，不同的溅镀薄膜材质制定程序参数规范。According to different process and material to define fit recipe parameter2.0 适用范围 Scope:生产在线 6 吋及 8 吋芯片的铝薄膜溅镀。Aluminum alloy sputtering on both 6 and 8-inch wafer currently3.0 参考文件 Reference:3.1 溅镀站标准作业标准书；Sputter Station SpecificationPE-0454.0 名
8、词定义 Definition:NA5.0 参数说明 Recipe explainNA 6.0 程序名称及参数 Recipe Name and Parameter:6.1 Process Name:sputter_Lead Step Nr. Type Name Step Description / Notes12235678910111213LC-PumpLC-DegaseLC-Etch1LC-Etch2Transp. to MCMC-PumpMC-PresputterHMC-preSputterLMC-sputter LMC-sputter HMC-PumpTransp. to LCLC-ve
9、ntpump downheaterignetch surfacetrans cagepump downsputter AICU4pumptrans rotaryvent5.0-6Torr30 passes 30s, 50%power1 passes 30s,0.2kw, 10sccm20 passes 30s,0.7kw,0V,10sccm5.0-7 TorrDC,5 passes 10s,120sccm,2:5kwPDC,5 passes 10s,120sccm,2:0.2. kwPDC,1 passes 10s,120sccm,2:0.2. kwPDC,108 passes 10s,120
10、sccm,2:10kwP1.0E-6Torrstop before vent晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to a
11、ny other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 5 of 21Edit Step LC-PumpTransf. Press. X 5E-6 mbar Name pump downPressure Timeout 0 s NotesTime per Pass 30 sEdit Step LC-DegasPasses 30 Name ventTime per Pass 30 s NotesDegas Power 50
12、 %Start Pressure none mbarPressure Timeout 0 sGas Ramp Time 0 sNo. Name Ramp Start FlowGas A 0 sccm晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP L
13、td. and shall not be reproduced or copied or transformed to any other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 6 of 21Edit Step LC-Etch 1 Continue Step Offset: 0 steps Auto Replays: 0Passes 1 Name ignTime per Pass 30 s NotesStart Pres
14、sure X 9.8E-6 mbar Gas A Purge Time 4 sPressure Timeout 0 s Gas Stab. Time 5 sGas Ramp Time 0 sNo. Name Ramp Start FlowGas A 2 Ar_et 10 sccmFlow PulseGas B 0 sccm Gas C 0 sccm Etch Power 0.20 kw Heat Power 0 %Etch Voltage 0 v晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅
15、镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to any other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Pa
16、ge 7 of 21Edit Step Transport LCMCp LC none mbar Name trans cagePump Timeout 0 s NotesEdit Step MC-Pump 1 Pressure X 5.0E-7 mbar Name vacuumPressure Timeout 0 s NotesTime per Pass 30 sRGAEdit Step LC-Etch 2 Continue Step Offset: 0 steps Auto Replays: 0Passes 20 Name etch surfaceTime per Pass 30 s No
17、tesStart Pressure none mbar Gas A Purge Time 0 sPressure Timeout 0 s Gas Stab. Time 0 sGas Ramp Time 0 sNo. Name Ramp Start FlowGas A 2 Ar_et 10 sccmFlow PulseGas B 0 sccm Gas C 0 sccm Etch Power 0.70 kw Heat Power 0 %Etch Voltage 0 v晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次
18、Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to any other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成
19、其它形式使用.Page 8 of 21Edit Step MC-Presputter 1 Continue Step Offset: 0 steps Auto Replays: 3Comp.Passes 5 none Name presp AlCuTime per Pass 10 s NotesPV ThrottleGas Ramp Time 0 s Gas A Purge Time 0 sGas Stab. Time 5 sNo. Name Ramp Start Flow Comp.Gas A 1 Ar_c 120 sccm noneFlow PulseGas B 0 sccm Gas C
20、0 sccm Gas D 0 sccmSource Ramp Time 25 sPos. Type Material Ramp Start Set point Voltage Comp.Source A 2 DC AlCu X 5.00 0Source B 4 DC AlCu X 5.00 0Source C 0Source D 0晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effectiv
21、e:This document is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to any other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 9 of 21Edit Step MC-Presputter 2 Continue Step Offset:
22、0 steps Auto Replays: 3Comp.Passes 5 none Name presp AlCuTime per Pass 10 s NotesPV ThrottleGas Ramp Time 0 s Gas A Purge Time 0 sGas Stab. Time 5 sNo. Name Ramp Start Flow Comp.Gas A 1 Ar_c 120 sccm noneFlow PulseGas B 0 sccm Gas C 0 sccm Gas D 0 sccmSource Ramp Time 25 sPos. Type Material Ramp Sta
23、rt Set point Voltage Comp.Source A 2 DC AlCu X 0.2 0Source B 4 DC AlCu X 0.2 0Source C 0Source D 0晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Lt
24、d. and shall not be reproduced or copied or transformed to any other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 10 of 21Edit Step MC-Sputter 1 Continue Step Offset: 0 steps Auto Replays: 0Comp.Passes 1 none Name AlCu tarTime per Pass 10
25、 s NotesX Shutter open/close control First Time: 0 deg Increment: 0 degPV ThrottleGas Ramp Time 0 s Gas A Purge Time 0 sNo. Name Ramp Start Flow Comp.Gas A 1 Ar_c 120 sccm noneFlow PulseGas B 0 sccm Gas C 0 sccm Gas D 0 sccmSource Ramp Time 0 sPos. Type Material Ramp Start Set point Voltage Comp.Sou
26、rce A 2 DC AlCu 0.2 0Source B 4 DC AlCu 0.2 0Source C 0Source D 0晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or
27、 copied or transformed to any other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 11 of 21Edit Step MC-Pump 2 Pressure X 1.0E-6 mbar Name pumpPressure Timeout 0 s NotesTime per Pass 30 sRGAEdit Step MC-Sputter 2 Continue Step Offset: 0 ste
28、ps Auto Replays: 0Comp.Passes 108 none Name AlCu tarTime per Pass 10 s NotesX Shutter open/close control First Time: 0 deg Increment: 0 degPV ThrottleGas Ramp Time 0 s Gas A Purge Time 0 sNo. Name Ramp Start Flow Comp.Gas A 1 Ar_c 120 sccm noneFlow PulseGas B 0 sccm Gas C 0 sccm Gas D 0 sccmSource R
29、amp Time 0 sPos. Type Material Ramp Start Set point Voltage Comp.Source A 2 DC AlCu 10 0Source B 4 DC AlCu 10 0Source C 0Source D 0晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive pro
30、perty of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to any other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 12 of 21Edit Step Transport MC LCp LC none mbar Name trans rotaryPump Timeout 0 s NotesEdit
31、 Step LC-VentPressure none mbar Name ventX Stop before Vent NotesGas during LOAD/UNLOADGas Ramp Time 0 sNo. Name Ramp Start FlowGas A 0 sccm6.2 process name:sput_padStep Nr. Type Name Step Description / Notes12235678910111213LC-PumpLC-DegaseLC-Etch1LC-Etch2Transp. to MCMC-PumpMC-PresputterHMC-preSpu
32、tterLMC-sputter LMC-sputter HMC-PumpTransp. to LCLC-ventpump downheaterignetch surfacetrans cagepump downsputter AICU4pumptrans rotaryvent5.0-6Torr30 passes 30s, 50%power1 passes 30s,0.2kw, 10sccm20 passes 30s,0.7kw,0V,10sccm5.0-7 TorrDC,5 passes 10s,120sccm,2:5kwPDC,5 passes 10s,120sccm,2:0.2. kwPD
33、C,1 passes 10s,120sccm,2:0.2. kwPDC,38 passes 10s,120sccm,2:10kwP1.0E-6Torrstop before vent晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Ltd. and
34、shall not be reproduced or copied or transformed to any other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 13 of 21Edit Step LC-PumpTransf. Press. X 5.0E-6 mbar Name pump downPressure Timeout 0 s NotesTime per Pass 30 sEdit Step LC-DegasP
35、asses 30 Name degasTime per Pass 30 s NotesDegas Power 50 %Start Pressure none mbarPressure Timeout 0 sGas Ramp Time 0 sNo. Name Ramp Start FlowGas A 0 sccm晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This docu
36、ment is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to any other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 14 of 21Edit Step LC-Etch 1 Continue Step Offset: 0 steps Auto Rep
37、lays: 0Passes 1 Name ignTime per Pass 30 s NotesStart Pressure none mbar Gas A Purge Time 4 sPressure Timeout 0 s Gas Stab. Time 20 sGas Ramp Time 0 sNo. Name Ramp Start FlowGas A 2 Ar_et 10 sccmFlow PulseGas B 0 sccm Gas C 0 sccm Etch Power 0.20 kw Heat Power 0 %Etch Voltage 0 v晶方半导体科技（苏州）有限公司China
38、 Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to any other format without prior permission of China Wafer Le
39、vel CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 15 of 21Edit Step Transport LCMCp LC none mbar Name trans cagePump Timeout 0 s NotesEdit Step MC-Pump 1Pressure X 5.0-7 mbar Name vacuumPressure Timeout 0 s NotesTime per Pass 30 sRGAEdit Step LC-Etch 2 Continue Step Offset: 0 steps Auto Repl
40、ays: 0Passes 15 Name etch surfaceTime per Pass 30 s NotesStart Pressure none mbar Gas A Purge Time 0 sPressure Timeout 0 s Gas Stab. Time 0 sGas Ramp Time 0 sNo. Name Ramp Start FlowGas A 2 Ar_et 10 sccmFlow PulseGas B 0 sccm Gas C 0 sccm Etch Power 0.70 kw Heat Power 0 %Etch Voltage 0 v晶方半导体科技（苏州）有
41、限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Sputter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to any other format without prior permission of China
42、Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 16 of 21Edit Step MC-Presputter 1 Continue Step Offset: 0 steps Auto Replays: 3Comp.Passes 5 none Name presp AlCuTime per Pass 10 s NotesPV ThrottleGas Ramp Time 0 s Gas A Purge Time 0 sGas Stab. Time 5 sNo. Name Ramp Start Flow Comp.
43、Gas A 1 Ar_c 120 sccm noneFlow PulseGas B 0 sccm Gas C 0 sccm Gas D 0 sccmSource Ramp Time 25 sPos. Type Material Ramp Start Set point Voltage Comp.Source A 2 DC AlCu X 5 0Source B 4 DC AlCu X 5 0Source C 0Source D 0晶方半导体科技（苏州）有限公司China Wafer Level CSP Ltd.文件编号 DOC#:JF/WI-ME-115版次 Rev:A001溅镀站参数规范Spu
44、tter Station Parameter Specification生效日期 Effective:This document is the exclusive property of China Wafer Level CSP Ltd. and shall not be reproduced or copied or transformed to any other format without prior permission of China Wafer Level CSP Ltd.本数据为晶方半导体专有之财产, 非经许可, 不得复制, 翻印或转变成其它形式使用.Page 17 of
45、21Edit Step MC-Presputter 2 Continue Step Offset: 0 steps Auto Replays: 3Comp.Passes 5 none Name presp AlCuTime per Pass 10 s NotesPV ThrottleGas Ramp Time 0 s Gas A Purge Time 0 sGas Stab. Time 5 sNo. Name Ramp Start Flow Comp.Gas A 1 Ar_c 60.00 sccm noneFlow PulseGas B 0 sccm Gas C 0 sccm Gas D 0 sccmSource Ramp Time 25 s
