1、1 1 CTO2021.09.17 TOPCon 2021 PVTD TOPCon 大规模产业化技术研讨会2 2 3 4 2 5 13 34 4 PERC：86.4%BSF：8.8%合：95.2%HJT+TOPCon：3.5%20%22%24%26%28%30%PERC+TOPCon HJT IBC HBC*/Si25.0%25.8%25.1%25.2%26.7%25.5%29.5%22.8%23.5%23.8%23.6%18.0%27.0%5 5TOPConHJTAl AlO SiOx/n+PolySi a-Si:H(i)/a-Si:H(n+或p+)6 6 SiOx/(n+p+)PolySi
2、 a-Si:H(i)/a-Si:H(n+p+)1 J0 2 电子 选 择性 接触钝 化 接 触电池结构及载流子输运方式SiOx/n+PolySi 钝化 接触能带结构7 7 SiOx/n+Poly-Si SiOx/p+Poly-Si 13.814.2 a-Si:H(i)/a-Si:H(n+)a-Si:H(i)/a-Si:H(p+)HJT TOPCon 28.2%28.7%HJT 27.5%PERC 24.5%29.43%/8 8 n+PolySi a-Si:H p+PolySi a-Si:H n+PolySi p+PolySi n+Poly9 9分 隔 页 标 题 文字Presentation
3、TitleTOPCon 1010TOPcon:PERC TOPCon 26%90-95%23.5%PERT 11 11/Voc mV Jsc mA/cm2 FF%cm2 Fraunhofer*TOPCon/n-Si 732 42.1 84.3 26.0 4 2020Fraunhofer*TOPCon/n-Si 724 42.9 83.1 25.8 4 2017*TOPCon/n-Si-25.25 2020*TOPCon/n-Si 721.6 41.64 83.90 25.21 242.97 2021*TOPCon/n-Si 719.8 41.59 83.83 25.09 242.77 2021
4、*TOPCon/p-Si-25.02 2021*TOPCon/n-Si 714.9 41.54 83.78%24.87 267.8 2020*TOPCon/n-Si 716.8 40.57 84.52 24.58 244.62 2019Fraunhofer*TOPCon/n-Si 713 41.4 83.1 24.5 100 2017TOPCon*国际检测机构认证机构 德国ISFH*中国计量院1212TOPCon 10-12 TOPCon 9E191E20 atoms/cm3&100200nm 3E20 atoms/cm3 3E20 atoms/cm3&100200nm LPCVD/PECVD
5、 13131.SiOx 2.3.TOPCon 1414-SiOx*Q.Wang et al,Solar Energy Materials and Solar Cells 208(2020)110423 SiOx2nm 1.6nm SiOx=1.55nm 1.43nm 1.25nm FF 1515-*150nm iVoc 745mV Jo 2fA/cm2*P.Padhamnath et.Al,Solar Energy Materials and Solar Cells 207(2020)1103581616 PERC TOPCon HJT 23%24%24.5%()24.06%26.0%25.26%1.06%2%0.76%12 12-14 6 95%-97%90%-95%80%-92%160-180um 160-180um 120-140um 182mm/210mm 166mm/182mm 158.75mm/166mm 1.8 2.1 4.5/Wp 0.97 1.09 1.28PERC TOPCon HJT 1717 PERC TOPCon 1.2.TOPCon 26%3.TOPCon 25%1818谢谢您的聆听！Thanks！2021 PVTD TOPCon
