1、LM2309-60V P-Channel Enhancement Mode MOSFETDescription General Features Application Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3P06AP LM2309 SOT-23 180mm 8 mm 3000 units Pin Configuration Rev:01.09.2021 1/Absolute Maximum Ratings(TC=2
2、5 unless otherwise noted)5 The LM2309 uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a Battery protection or in other Switching application.VDS=-60V ID=-2.8A RDS(ON)200m VGS=-10V（Type：165
3、m）Battery protection Load switch Uninterruptible power supply Dimensions SOT-23 Symbol Parameter Rating Units VDS Drain-Source Voltage-60 V VGS Gate-Source Voltage 20 V IDTA=25 Continuous Drain Current,VGS-10V1-2.8 A IDTA=70 Continuous Drain Current,VGS-10V1-1.8 A IDM Pulsed Drain Current2-8.4 A PDT
4、A=25 Total Power Dissipation3 1.5 W TSTG Storage Temperature Range-55 to 150 TJ Operating Junction Temperature Range-55 to 150 RJA Thermal Resistance Junction-Ambient 1 125/W RJC Thermal Resistance Junction-Case1 80/W Rev:Electrical Characteristics(TJ=25,unless otherwise noted)2/5 01.09.2021Symbol P
5、arameter Conditions Min.Typ.Max.Unit BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=-250uA-60-67-V BVDSS/TJ BVDSS Temperature Coefficient Reference to 25,ID=-1mA-0.021-V/RDS(ON)Static Drain-Source On-Resistance2 VGS=-10V,ID=-1.5A-165 200 m VGS=-4.5V,ID=-1A-200 250 VGS(th)Gate Threshold Voltage VGS=V
6、DS,ID=-250uA-1.0 1.7-2.5 V VGS(th)VGS(th)Temperature Coefficient-4.08-mV/IDSS Drain-Source Leakage Current VDS=-48V,VGS=0V,TJ=25-1 uA VDS=-48V,VGS=0V,TJ=55-5 IGSS Gate-Source Leakage Current VGS=20V,VDS=0V-100 nA gfs Forward Transconductance VDS=-5V,ID=-1.5A-5.9-S Qg Total Gate Charge(-4.5V)VDS=-20V
7、,VGS=-4.5V,ID=-1.5A-4.6-nC Qgs Gate-Source Charge-1.4-Qgd Gate-Drain Charge-1.62-Td(on)Turn-On Delay Time VDS=-15V,VGS=-10V,RG=3.3,ID=-1A-17.4-ns Tr Rise Time-5.4-Td(off)Turn-Off Delay Time-37.2-Tf Fall Time-2.4-Ciss Input Capacitance VDS=-15V,VGS=0V,f=1MHz-453-pF Coss Output Capacitance-59-Crss Rev
8、erse Transfer Capacitance-38-IS Continuous Source Current1,4 VG=VD=0V,Force Current-1.7 A ISM Pulsed Source Current2,4-7 A VSD Diode Forward Voltage2 VGS=0V,IS=-1A,TJ=25-1.2 V Note:1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.2、The data tested by pulsed,pulse width 30
9、0us,duty cycle 2%3、The power dissipation is limited by 150 junction temperature 4、The data is theoretically the same as ID and IDM,in real applications,should be limited by total power dissipation.LM2309 Rev:3/5 01.09.2021 LM2309Rev:4/5 01.09.2021 LM2309Shanghai Leiditech Electronic Co.,Ltd Email:Te
10、l:+86-021 50828806 Fax:+86-021 50477059 Rev:5/5 SOT-23 Package Information Dimensions in Millimeters Symbol MIN.MAX.A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 0 8 01.09.2021LM2309
