1、ChangshaAsianLightEconmicTradeCo.,LtdAd:D3-106Rm ,NewCenturyHom e,WanjialiRd,Changsha,Huna,ChinaTel:86-731-475381/2/83/ex086-731-574801Fax:86-731-47538486-731-475382-E-m ail:xinchunzgm y.chzyezgm MSN:trade86zgm y.chzyezgm htp:/w.zgm htp:/w.chinajshg.c/ Q：675180182Skype:stevn90658MSN:trade86zgm y.cO
2、urcompanycansuplyindiumserisproducts,wehaveownpatentithislie.Ourprodctsarexclntiqalityandrsnableinric,pleaflfretntctmifyouhavenquestioridaboutourcoperation.Welcometocntacts!Thedtailinformationasfolw:IndiumPowderStandar：GB607-86Mainuse：Dopingaentofcompoundsemiconductor,higpurityaloyandseicndctorateri
3、als.Meshsiz：-1080msh，15mContts：In9.%9.9%9.9%Charcterisati MethodsPurity：TestdbyICP AESmeansIndimWirStaar：GB607-86Mainuse：Dopingaentofcompoundsemiconductor,higpurityaloyandseicndctoraterials.Size：Diamtr1m-5m(orsrequestd)Chemicalcontets：In9.9%(9.9%9.9%)u5.0pm,Cd5.0pm,Pb5.0pm,Tl5.0pm,Sn6. ,Zn. ,Fe7. ,A
4、s. ,Al5.0pm.IndiuFoilStaar：GB607-86Mainuse：conductoraditing。Size：10100.1m(rsrequestd)ChemicalContts:In9.9%(99.9%9.9%)Cu5.0pm,Cd5.0pm,Pb5.0pm,Tl5.0pm,Sn5.0pm,Zn5.0pm,Fe5.0pm,As5.0pm,Al5.0pm。IndiuingotProductsame：idiumingotChemicalcontts：In9.9%andheicalcontets:I.5Impurity：pm.Cu0.28Ag0.46Mg0.28Ni0.24Zn
5、0.42Fe0.49d.3s.50Si1.0S1.0Al.Ti.Pb0.58n.98Ca.29Sum10Form&colr：trapezia，surfaceislick，silverywhiteandmetalustMainuse：mainusdinloy,suchasbearingalo,low-ltingloy,anti-corsionloy,dentall,andloycot.AlsusedinLCDadvidicon,ifraedreciver,al juctionfioe,transitoranrctifer,solrbatery,andnergyindustry,nuclaridu
6、strydcatlyst.1、IimTiOxideITOTargetPrincipalUsLCDtransparentelctricitycoductiveITOfilmdepositedbyvacummagneticsptring.PhysicalProertiesChemicalFormula:In2O3/SnO2RltiveDensity:=9%CrystalParticlSize:515mElectriclResitivity:0.120-3cLinarThermalExpansion:8.1-K-1Purity:=9.9%Apearnce:BlackCeramicPiecImpuri
7、ty(Unit:m):ElmentAlSbCduFPbNiSiZnBaContet(=9.9%ParticleSize:2070nmReltiveDnsity:7.1.16g/c3Impurity(Unit:pm):ElemntAlSbCduFePbNiSiZnBaCotent(=9.9%MeltingPoint：156.1CBoil it：2072Size：Thesizemaybemadeacordingtocustomersrequest,suchasFoil:0.1x10x10,0.2x10x10mr0.1x150x250mWire:Dia5CharctristionMethodsPur
8、ity：TestdbyICP AESmeans9、IndiumBal&owderPrinciplUseUseinthecompoundsemicoductor,theighpurealoyandthesemiconductigaterialsopingaent,tcontactmtril son.PhysiclPropertiesCemicalFrmula：InPurity：=9.9%MeltingPoint：156.1CBoil it：2072Size：Thesizemaybemadeacordingtocustomersrequest,suchasPowdr:-1090mesh&15Bal
9、:Dia1.5.0mChrcteristionMethodsPurity：TstdbyICP AESmeansIndiumgranule(IndiuBal)PricipalUseUseinthecompoundsemiconductor,theighpurealoyandthesemiconductigaterialsopigaent,tcontactmtril son.PhysiclPropertiesCemicalFrmula：InPurity:9.9%,9.95%,9.9%9.9%MeltingPoint:156.1CBoil it:2072Size:Thesizemaybemadeacordingtocustomersrequest,suchasBal(grnul):Dia1.05.0CharcteristionMethodsPurity:TstdbyICP AESmeans
