1、12348765InputMatchOutputMatchC11000pFR2Rbias1.8RL1RF choke100nHC21000pFVCCPWDNVCCProductFolderSample &BuyTechnicalDocumentsTools &SoftwareSupport &CommunityTRF37A75ZHCSCF6 MAY 2014TRF37A75 40-6000MHz射射频频(RF)增增益益块块1特特性性3说说明明1 40MHz-6000MHz TRF37A75采用具有功率降低引脚的2.00mm x2.00mm超薄小外形尺寸无引线(WSON)封装，这使增益版本：12
2、dB得这款器件非常适合于空间占用和低功率模式十分关键噪声值：4dB的应用。输出P1dB：2000MHz时为18dBm输出IP3：2000MHz时为32.5dBm TRF37A75的设计目的是易于使用。为了实现最大灵功率降低模式(Power Down Mode)活性，这个产品系列使用常见的5V电源，并且流耗为单电源：5V 80mA。此外，这一系列在设计时使用了有源偏置电温度范围内的稳定性能路，此电路在过程、温度和电压变化范围内提供一个稳无条件稳定定且可预计的偏置电流。为了实现增益和线性预算，强健的静电放电(ESD)防护： 1kV人体模型此器件被设计成提供一个平坦增益响应，以及频率达到(HBM)；
3、 1kV充电器件模型(CDM) 6000MHz时的出色OIP3输出。针对空间受限应用，这一系列与50内部匹配，这样简化了使用，并且最2应应用用范范围围大限度地减小了所需的印刷电路板(PCB)面积。通用RF增益块消费类产品器器件件信信息息(1)工业用产产品品型型号号封封装装封封装装尺尺寸寸（标标称称值值）TRF37A75 WSON (32) 2.00mm x 2.00mm公用事业计量仪表低成本无线电产品(1)要了解所有可用封装，请见数据表末尾的可订购产品附录。蜂窝基站简简化化电电路路原原理理图图无线基础设施 RF回程雷达电子对抗软件定义的无线电测试和测量点对点/多点微波软件定义的无线电 RF中继
4、器分布式天线系统本振(LO)和PA驱动器放大器无线数据，卫星，直播卫星(DBS)，有线电视(CATV)中频(IF)放大器1PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does not necessarily include testing of all parameters. Englis
5、h Data Sheet: SLOS871TRF37A75ZHCSCF6 MAY 2014 目目录录7.2 Functional Block Diagram. 81特特性性 17.3 Feature Description. 82应应用用范范围围. 17.4 Device Functional Modes 83说说明明 18 Applications and Implementation 94修修订订历历史史记记录录. 28.1 Application Information 95 Pin Configuration and Functions. 38.2 Typical Applicatio
6、n . 96 Specifications. 49 Power Supply Recommendations 106.1 Absolute Maximum Ratings 410 Layout. 116.2 Handling Ratings. 410.1 Layout Guidelines . 116.3 Recommended Operating Conditions. 410.2 Layout Example 116.4 Thermal Information 411器器件件和和文文档档支支持持. 126.5 Electrical Characteristics. 511.1 Tradem
7、arks. 126.6 Timing Requirements 511.2 Electrostatic Discharge Caution 126.7 Typical Characteristics 611.3 Glossary 127 Detailed Description 812机机械械封封装装和和可可订订购购信信息息 127.1 Overview. 84修修订订历历史史记记录录日日期期修修订订版版本本注注释释2014年5月*最初发布。2 Copyright 2014, Texas Instruments Incorporated1234VCCNCNCRFIN8765NCPWDNRFOU
8、TNCInputMatchOutputMatchTRF37A ZHCSCF6 MAY 20145 Pin Configuration and FunctionsDSG PACKAGE(TOP VIEW)Pin FunctionsPIN DESCRIPTIONNAME NO.VCC 1 DC Bias.RFIN 2 RF input. Connect to an RF source through a DC-blocking capacitor. Internally matched to 50 .NC 3, 4, 6, 8 No electrical connection. Connect p
9、ad to GND for board level reliability integrity.When high the device is in power down state. When LOW or NC the device is in active state. InternalPWDN 5pulldown resistor to GND.RF Output and DC Bias (VCC). Connect to DC supply through an RF choke inductor. Connect to outputRFOUT 7load through a DC-
10、blocking capacitor. Internally matched to 50 .GND PowerPAD RF and DC GND. Connect to PCB ground plane.Copyright 2014, Texas Instruments Incorporated 3TRF37A75ZHCSCF6 MAY 2014 6 Specifications6.1 Absolute Maximum Ratingsover operating free-air temperature range (unless otherwise noted) (1)MIN MAX UNI
11、TSupply Input voltage 0.3 6 VInput Power With recommended Rbias resistor 10 dBmOperating virtual junction temperature range 40 150 C(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratingsonly, which do not imply functional op
12、eration of the device at these or any other conditions beyond those indicated under RecommendedOperating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.6.2 Handling RatingsMIN MAX UNITTSTG Storage temperature range 65 150 CHuman body mode
13、l (HBM), per ANSI/ESDA/JEDEC 1 1 kVJS-001, all pins(1)VESD Electrostatic discharge Charged device model (CDM), per JEDEC1 1 kVspecification JESD22-C101, all pins (2)(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.(2) JEDEC document JEP157
14、 states that 250-V CDM allows safe manufacturing with a standard ESD control process.6.3 Recommended Operating Conditionsover operating free-air temperature range (unless otherwise noted)MIN NOM MAX UNITSupply Voltage, VCC 4.5 5 5.25 VOperating junction temperature, TJ 40 125 C6.4 Thermal Informatio
15、nDSGTHERMAL METRIC(1) UNIT8 PINSRJA Junction-to-ambient thermal resistance 79.3RJCtop Junction-to-case (top) thermal resistance 110RJB Junction-to-board thermal resistance 49 C/WJT Junction-to-top characterization parameter 6JB Junction-to-board characterization parameter 49.4RJCbot Junction-to-case
16、 (bottom) thermal resistance 19.2(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.4 Copyright 2014, Texas Instruments IncorporatedTRF37A ZHCSCF6 MAY 20146.5 Electrical CharacteristicsVCC = 5 V, TA = 25C, PWDN = Low, RB
17、IAS = 1.8 , LOUT = 100 nH, C1 = C2 = 1000 pF, ZS = ZL = 50 (unless otherwisenoted)PARAMETER TEST CONDITIONS MIN TYP MAX UNITDC ParametersTotal supply current 80 95 mAICC Power down current PWDN = High 125 APdiss Power dissipation 0.4 WRF Frequency RangeFrequency range 40 6000 MHzfRF = 400 MHz 13 dBf
18、RF = 2000 MHz 12 dBfRF = 3000 MHz 12 dBG Small signal gainfRF = 4000 MHz 12 dBfRF = 5000 MHz 12 dBfRF = 6000 MHz 11 dBOP1dB Output 1dB compression point At 2000 MHz 19 dBmOIP3 Output 3rd order intercept point At 2000 MHz, 2-tone 10MHz apart 32.5 dBmNF Noise figure At 2000 MHz 4 dBR(LI) Input return
19、loss At 2000 MHz 16 dBR(LO) Output return loss At 2000 MHz 13 dBPWDN PinVIH High level input level 2 VVIL Low level input level 0.8 VIIH High level input current 30 AIIL Low level input current 1 A6.6 Timing RequirementsMIN TYP MAX UNITPWDN PintON Turn-on Time 50% TTL to 90% POUT 0.6 stOFF Turn-off
20、Time 50% TTL to 10% POUT 1.4 sCopyright 2014, Texas Instruments Incorporated 512 13 14 15 16 17 18 19 20 21 22 0 1000 2000 3000 4000 5000 6000 OP1dB (dBm)Frequency (MHz) 4.5 4.75 5 5.25 C007 12 13 14 15 16 17 18 19 20 21 22 0 1000 2000 3000 4000 5000 6000 OP1dB (dBm)Freuency (MHz) cb140c83C 25c83C 8
21、5c83C C008 10 10.5 11 11.5 12 12.5 13 13.5 14 0 1000 2000 3000 4000 5000 6000 Gain (dB) Frequency (MHz) 4.5 V 4.75 V 5 V 5.25 V C001 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 0 1000 2000 3000 4000 5000 6000 Gain (dB) Frequency (MHz) cb140c83C 25c83C 85c83C C002 Freq 10.00 MHz to 6.000 GHzS2,2S1,1
22、cb140.00 cb135.00 cb130.00 cb125.00 cb120.00 cb115.00 cb110.00 cb15.00 0.00 0 1000 2000 3000 4000 5000 6000 Sxx (dB) Frequency (MHz) S11 S12 S21 C016 TRF37A75ZHCSCF6 MAY 2014 6.7 Typical CharacteristicsVCC = 5 V Temp = 25C 40 MHz to 6 GHzVCC = 5 V Temp = 25C 10 MHz to 6 GHzData Taken with EVM and Bi
23、as T, De-embedded to DUT pinData Taken with EVM and Bias T, De-embedded to DUT pinFigure 2. S11, S12, S21Figure 1. Smith Chart S11, S22VCC curves Temp = 25C Pin = 10 dBm Temp curves VCC = 5 V Pin = 10 dBmFigure 3. Gain vs Frequency Figure 4. Gain vs FrequencyVCC curves Temp = 25C Temp curves VCC = 5
24、 VFigure 5. OP1dB vs Frequency Figure 6. OP1dB vs Frequency6 Copyright 2014, Texas Instruments Incorporated75 78 81 84 87 90 0 1000 2000 3000 4000 5000 6000 I CC(mA)Frequency (MHz) 4.5 4.75 5 5.25 C013 75 78 81 84 87 90 0 1000 2000 3000 4000 5000 6000 I CC(mA)Frequency (MHz) cb140c83C 25c83C 85c83C
25、C014 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 1000 2000 3000 4000 5000 6000 NF(dB)Frequency (MHz) 4.5 4.75 5 5.25 C010 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 1000 2000 3000 4000 5000 6000 NF(dB)Frequency (MHz) -40 25 85 C011 15 17 19 21 23 25 27 29 31 33 35 0 1000 2000 3000 4000 5000 6000 OIP3(dBm) Freq
26、uency (MHz) 4.5 4.75 5 5.25 C004 15 17 19 21 23 25 27 29 31 33 35 0 1000 2000 3000 4000 5000 6000 OIP3(dBm) Frequency (MHz) -40 25 85 C005 TRF37A ZHCSCF6 MAY 2014Typical Characteristics (continued)VCC curves Temp = 25C Pin = 10 dBm/tone Temp curves VCC = 5 V Pin = 10 dBm/toneFigure 7. OIP3 vs Freque
27、ncy Figure 8. OIP3 vs FrequencyVCC curves Temp = 25C Temp curves VCC = 5 VFigure 9. NF vs Frequency Figure 10. NF vs FrequencyVCC curves Temp = 25C Temp curves VCC = 5 VFigure 11. ICC vs Frequency Figure 12. ICC vs FrequencyCopyright 2014, Texas Instruments Incorporated 7InputMatchOutputMatchActive
28、Bi as an dTem perat ure Com pensati onVC C VC CPo wer DownRF Input RF OutputTRF37A75ZHCSCF6 MAY 2014 7 Detailed Description7.1 OverviewThe device is a 5 V general purpose RF gain block. It is a SiGe Darlington amplifier with integrated 50 inputand output matching. The device contains an active bias
29、circuit to maintain performance over a wide temperatureand voltage range. The included power down function allows the amplifier to shut down saving power when theamplifier is not needed. Fast shut down and start up enable the amplifier to be used in a host of time divisionduplex applications.7.2 Fun
30、ctional Block Diagram7.3 Feature DescriptionThe TRF37A75 is a fixed gain RF amplifier. It is internally matched to 50 on both the input and output. It is afully cascadable general purpose amplifier. The included active bias circuitry ensures the amplifier performanceis optimized over the full operat
31、ing temperature and voltage ranges7.4 Device Functional Modes7.4.1 Power DownThe TRF37A75 PWDN pin can be left unconnected for normal operation or a logic-high for disable modeoperation. For applications that use the power down mode, normal 5 V TLL levels are supported.8 Copyright 2014, Texas Instru
32、ments Incorporated1234VCCRFIN8765RFOUTC5C2C1DC Blocking CapacitorDC Blocking CapacitorRF Choke InductorDC Bias ResistorDC Bypass CapacitorRF Bypass CapacitorsRF In RF OutVCCC3R2C4L1PWDNTRF37A ZHCSCF6 MAY 20148 Applications and Implementation8.1 Application InformationThe TRF37A75 is a wideband, high
33、 performance, general purpose RF amplifier. To maximize its performance,good RF layout and grounding techniques should be employed.8.2 Typical ApplicationThe TRF37A75 device is typically placed in a system as illustrated in Figure 13.Figure 13. Typical Application Schematic for TRF37A758.2.1 Design
34、RequirementsTable 1. Design ParametersPARAMETERS EXAMPLE VALUESInput power range 3 dBmOutput power 18 dBmOperating frequency range 40 6000 MHz8.2.2 Detailed Design ProcedureThe TRF37A75 is a simple to use internally matched and cascadable RF amplifier. Following the recommendedRF layout with good qu
35、ality RF components and local DC bypass capacitors will ensure optimal performance isachieved. TI provides various support materials including S-Parameter and ADS models to allow the design to beoptimized to the users particular performance needs.Copyright 2014, Texas Instruments Incorporated 90 2 4
36、 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 0 1000 2000 3000 4000 5000 6000 NF(dB) OP1dB (dBm)Frequency (MHz) OP1dB NF C017 TRF37A75ZHCSCF6 MAY 2014 8.2.3 Application CurveFigure 14. OP1dB and NF vs Frequency9 Power Supply RecommendationsAll supplies may be generated from a common nomin
37、al 5 V source but should be isolated through decouplingcapacitors placed close to the device. The typical application schematic in Figure 13 is an excellent example.Select capacitors with self-resonant frequency near the application frequency. When multiple capacitors are usedin parallel to create a
38、 broadband decoupling network, place the capacitor with the higher self-resonant frequencycloser to the device. Expensive tantalum capacitors are not needed for optimal performance.10 Copyright 2014, Texas Instruments Incorporated1234VCCNCNCRFIN8765NCPWDNRFOUTNCDC Blocking CapacitorDC Blocking Capac
39、itorRF Choke InductorDC Bias ResistorDC Bypass CapacitorDC Bypass CapacitorRF Bypass CapacitorsRF In RF OutVCCNote: Ensure good RF microstrip or stripline traces are used to connect the external components to the RF input and output pinsNote: Ensure all components are connected to a common RF/DC gro
40、und plane with plenty of viasNote: Single DC bypass capacitor can be used as long as it is close to the pin 1 and is tied to the common ground planeTRF37A ZHCSCF6 MAY 201410 Layout10.1 Layout GuidelinesGood layout practice helps to enable excellent linearity and isolation performance. An example of
41、good layout isshown in Figure 15. In the example, only the top signal layer and its adjacent ground reference plane are shown. Excellent electrical connection from the PowerPAD to the board ground is essential. Use the recommendedfootprint, solder the pad to the board, and do not include solder mask
42、 under the pad. Connect pad ground to device terminal ground on the top board layer. Verify that the return DC and RF current path have a low impedance ground plane directly under the packageand RF signal traces into and out of the amplifier. Ensure that ground planes on the top and any internal lay
43、ers are well stitched with vias. Do not route RF signal lines over breaks in the reference ground plane. Avoid routing clocks and digital control lines near RF signal lines. Do not route RF or DC signal lines over noisy power planes. Ground is the best reference, although cleanpower planes can serve
44、 where necessary. Place supply decoupling close to the device.10.2 Layout ExampleFigure 15. LayoutCopyright 2014, Texas Instruments Incorporated 11TRF37A75ZHCSCF6 MAY 2014 11器器件件和和文文档档支支持持11.1 TrademarksPowerPAD is a trademark of Texas Instruments.11.2 Electrostatic Discharge CautionThese devices ha
45、ve limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.11.3 GlossarySLYZ022 TI Glossary.This glossary lists and explains terms, acronyms and definitions.12机机械械封封装装和和可可
46、订订购购信信息息以下页中包括机械封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。12 Copyright 2014, Texas Instruments Incorporated重重要要声声明明德州仪器(TI)及其下属子公司有权根据JESD46最新标准,对所提供的产品和服务进行更正、修改、增强、改进或其它更改，并有权根据JESD48最新标准中止提供任何产品和服务。客户在下订单前应获取最新的相关信息,并验证这些信息是否完整且是最新的。所有产品的销售都遵循在订单确认时所提供的TI销售条
47、款与条件。TI保证其所销售的组件的性能符合产品销售时TI半导体产品销售条件与条款的适用规范。仅在TI保证的范围内，且TI认为有必要时才会使用测试或其它质量控制技术。除非适用法律做出了硬性规定，否则没有必要对每种组件的所有参数进行测试。TI对应用帮助或客户产品设计不承担任何义务。客户应对其使用TI组件的产品和应用自行负责。为尽量减小与客户产品和应用相关的风险，客户应提供充分的设计与操作安全措施。TI不对任何TI专利权、版权、屏蔽作品权或其它与使用了TI组件或服务的组合设备、机器或流程相关的TI知识产权中授予的直接或隐含权限作出任何保证或解释。TI所发布的与第三方产品或服务有关的信息，不能构成从T
48、I获得使用这些产品或服务的许可、授权、或认可。使用此类信息可能需要获得第三方的专利权或其它知识产权方面的许可，或是TI的专利权或其它知识产权方面的许可。对于TI的产品手册或数据表中TI信息的重要部分，仅在没有对内容进行任何篡改且带有相关授权、条件、限制和声明的情况下才允许进行复制。TI对此类篡改过的文件不承担任何责任或义务。复制第三方的信息可能需要服从额外的限制条件。在转售TI组件或服务时，如果对该组件或服务参数的陈述与TI标明的参数相比存在差异或虚假成分，则会失去相关TI组件或服务的所有明示或暗示授权，且这是不正当的、欺诈性商业行为。TI对任何此类虚假陈述均不承担任何责任或义务。客户认可并同
49、意，尽管任何应用相关信息或支持仍可能由TI提供，但他们将独力负责满足与其产品及在其应用中使用TI产品相关的所有法律、法规和安全相关要求。客户声明并同意，他们具备制定与实施安全措施所需的全部专业技术和知识，可预见故障的危险后果、监测故障及其后果、降低有可能造成人身伤害的故障的发生机率并采取适当的补救措施。客户将全额赔偿因在此类安全关键应用中使用任何TI组件而对TI及其代理造成的任何损失。在某些场合中，为了推进安全相关应用有可能对TI组件进行特别的促销。TI的目标是利用此类组件帮助客户设计和创立其特有的可满足适用的功能安全性标准和要求的终端产品解决方案。尽管如此，此类组件仍然服从这些条款。TI组件未获得用于FDA Class I
