1、5/8/ 1IRF730ATO-220ABSMPS MOSFETHEXFETPower MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supplyl High speed power switchingBenefitsApplicationsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacita
2、nce andAvalanche Voltage and CurrentVDSSRds(on) max ID400V 1.0 5.5ASDGParameter Max. UnitsID TC= 25C Continuous Drain Current, VGS 10V 5.5ID TC= 100C Continuous Drain Current, VGS 10V 3.5 AIDMPulsed Drain Current 22PD TC= 25C Power Dissipation 74 WLinear Derating Factor 0.6 W/CVGSGate-to-Source Volt
3、age 30 Vdv/dt Peak Diode Recovery dv/dt 4.6 V/nsTJOperating Junction and -55 to + 150TSTGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (1.6mm from case )CMounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm)Absolute Maximum Ratingsl Effective Coss Specified (See AN1001)PD - 91902ATy
4、pical SMPS Topologies:l Single Transistor Flyback Xfmr. Resetl Single Transistor Forward Xfmr. Reset(Both US Line input only).IRF730A2 Parameter Min. Typ. Max. Units ConditionsgfsForward Transconductance 3.1 S VDS= 50V, ID= 3.3AQgTotal Gate Charge 22 ID= 3.5AQgsGate-to-Source Charge 5.8 nC VDS= 320V
5、QgdGate-to-Drain (“Miller“) Charge 9.3 VGS= 10V, See Fig. 6 and 13 td(on)Turn-On Delay Time 10 VDD= 200VtrRise Time 22 ID= 3.5Atd(off)Turn-Off Delay Time 20 RG= 12tfFall Time 16 RD= 57,See Fig. 10 CissInput Capacitance 600 VGS= 0VCossOutput Capacitance 103 VDS= 25VCrssReverse Transfer Capacitance 4.
6、0 pF = 1.0MHz, See Fig. 5CossOutput Capacitance 890 VGS= 0V, VDS= 1.0V, = 1.0MHzCossOutput Capacitance 30 VGS= 0V, VDS= 320V, = 1.0MHzCosseff. Effective Output Capacitance 45 VGS= 0V, VDS= 0V to 320V Parameter Min. Typ. Max. Units ConditionsV(BR)DSSDrain-to-Source Breakdown Voltage 400 V VGS= 0V, ID
7、= 250AV(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.5 V/C Reference to 25C, ID= 1mARDS(on)Static Drain-to-Source On-Resistance 1.0 VGS= 10V, ID= 3.3A VGS(th)Gate Threshold Voltage 2.0 4.5 V VDS= VGS, ID= 250A 25AVDS= 400V, VGS= 0V 250 VDS= 320V, VGS= 0V, TJ= 125CGate-to-Source Forward Leakage 10
8、0 VGS= 30VGate-to-Source Reverse Leakage -100nAVGS= -30VStatic TJ= 25C (unless otherwise specified)IGSSIDSSDrain-to-Source Leakage CurrentDynamic TJ= 25C (unless otherwise specified)nsParameter Typ. Max. UnitsEASSingle Pulse Avalanche Energy 290 mJIARAvalanche Current 5.5 AEARRepetitive Avalanche En
9、ergy 7.4 mJAvalanche CharacteristicsSDGParameter Min. Typ. Max. Units ConditionsISContinuous Source Current MOSFET symbol(Body Diode) showing theISMPulsed Source Current integral reverse(Body Diode) p-n junction diode.VSDDiode Forward Voltage 1.6 V TJ= 25C, IS= 5.5A, VGS= 0V trrReverse Recovery Time
10、 370 550 ns TJ= 25C, IF= 3.5AQrrReverse RecoveryCharge 1.6 2.4 C di/dt = 100A/stonForward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)Diode Characteristics5.522AParameter Typ. Max. UnitsRJCJunction-to-Case 1.70RCSCase-to-Sink, Flat, Greased Surface 0.50 C/WRJAJun
11、ction-to-Ambient 62 62Thermal ResistanceIRF730A 3Fig 4. Normalized On-ResistanceVs. TemperatureFig 2. Typical Output CharacteristicsFig 1. Typical Output CharacteristicsFig 3. Typical Transfer Characteristics0.010.11101000.1 1 10 10020s PULSE WIDTHT = 150 CJTOPBOTTOMVGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V
12、V , Drain-to-Source Voltage (V)I , Drain-to-Source Current (A)DSD4.5V0.11101004.0 5.0 6.0 7.0 8.0 9.0 10.0V = 50V20s PULSE WIDTHDSV , Gate-to-Source Voltage (V)I , Drain-to-Source Current (A)GSDT = 25 CJT = 150 CJ-60 -40 -20 0 20 40 60 80 100 120 140 1600.00.51.01.52.02.5T , Junction Temperature ( C
13、)R , Drain-to-Source On Resistance(Normalized)JDS(on)V =I =GSD10V5.9A0.010.11101000.1 1 10 10020s PULSE WIDTHT = 25 CJTOPBOTTOMVGS15V10V8.0V7.0V6.0V5.5V5.0V4.5VV , Drain-to-Source Voltage (V)I , Drain-to-Source Current (A)DSD4.5V5.5IRF730A4 Fig 8. Maximum Safe Operating AreaFig 6. Typical Gate Charg
14、e Vs.Gate-to-Source VoltageFig 5. Typical Capacitance Vs.Drain-to-Source VoltageFig 7. Typical Source-Drain DiodeForward Voltage0.111010010 100 1000OPERATION IN THIS AREA LIMITEDBY RDS(on)Single PulseTT= 150 C= 25 CJCV , Drain-to-Source Voltage (V)I , Drain Current (A)I , Drain Current (A)DSD10us100
15、us1ms10ms0 5 10 15 20 25048121620Q , Total Gate Charge (nC)V , Gate-to-Source Voltage (V)GGSFOR TEST CIRCUITSEE FIGURE I =D135.9AV = 80VDSV = 200VDSV = 320VDS0.11101000.4 0.6 0.8 1.0 1.2V ,Source-to-Drain Voltage (V)I , Reverse Drain Current (A)SDSDV = 0 V GST = 25 CJT = 150 CJ5.51 10 100 1000VDS, D
16、rain-to-Source Voltage (V)110100100010000100000C, Capacitance(pF)CossCrssCissVGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTEDCrss = Cgd Coss = Cds + CgdIRF730A 5Fig 10a. Switching Time Test CircuitFig 10b. Switching Time WaveformsFig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Cas
17、eFig 9. Maximum Drain Current Vs.Case TemperatureVDSPulse Width 1 sDuty Factor 0.1 %RDVGSRGD.U.T.10V+-VDDVDS90%10%VGStd(on)trtd(off)tf25 50 75 100 125 1500.01.02.03.04.05.06.0T , Case Temperature ( C)I , Drain Current (A)CD0.010.11100.00001 0.0001 0.001 0.01 0.1 1Notes:1. Duty factor D = t / t2. Pea
18、k T = P x Z + T1 2J DM thJC CPttDM12t , Rectangular Pulse Duration (sec)Thermal Response(Z )1thJC0.010.020.050.100.20D = 0.50SINGLE PULSE(THERMAL RESPONSE)IRF730A6 QGQGSQGDVGChargeD.U.T.VDSIDIG3mAVGS.3F50K.2F12VCurrent RegulatorSame Type as D.U.T.Current Sampling Resistors+-10 VFig 13b. Gate Charge
19、Test CircuitFig 13a. Basic Gate Charge WaveformFig 12c. Maximum Avalanche EnergyVs. Drain CurrentFig 12b. Unclamped Inductive WaveformsFig 12a. Unclamped Inductive Test CircuittpV(BR)DSSIASRGIAS0.01tpD.U.TLVDS+-VDDDRIVERA15V20VFig 12d. Typical Drain-to-Source VoltageVs. Avalanche Current25 50 75 100
20、 125 1500100200300400500600700Starting T , Junction Temperature ( C)E , Single Pulse Avalanche Energy (mJ)JASIDTOPBOTTOM2.5A 3.5A 5.5A 0.0 1.0 2.0 3.0 4.0 5.0 6.0IAV , Avalanche Current ( A)540550560570580590600610V DSav , Avalanche Voltage ( V )IRF730A 7P.W.Perioddi/dtDiode Recoverydv/dtRipple 5%Bo
21、dy Diode Forward DropRe-AppliedVoltageReverseRecoveryCurrentBody Diode ForwardCurrentVGS=10VVDDISDDriver Gate DriveD.U.T. ISDWaveformD.U.T. VDSWaveformInductor CurentD = P.W.Period+-+-Fig 14. For N-Channel HEXFETS* VGS= 5V for Logic Level DevicesPeak Diode Recovery dv/dt Test CircuitRGVDD dv/dt cont
22、rolled by RG Driver same type as D.U.T. ISDcontrolled by Duty Factor “D“ D.U.T. - Device Under TestD.U.TCircuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer*IRF730A8 LEAD ASSIGNMENTS1 - GATE 2 - DRAIN3 - SOURCE4 - DRAIN- B -1.32 (.052)1.22 (.048)3
23、X0.55 (.022)0.46 (.018)2.92 (.115)2.64 (.104)4.69 (.185)4.20 (.165)3X0.93 (.037)0.69 (.027)4.06 (.160)3.55 (.140)1.15 (.045)MIN6.47 (.255)6.10 (.240)3.78 (.149)3.54 (.139)- A -10.54 (.415)10.29 (.405)2.87 (.113)2.62 (.103)15.24 (.600)14.84 (.584)14.09 (.555)13.47 (.530)3X1.40 (.055)1.15 (.045)2.54 (
24、.100)2X0.36 (.014) M B A M41 2 3NOTES:1 DIMENSIONING pulse width limited bymax. junction temperature. ( See fig. 11 )ISD 5.5A, di/dt 90A/s, VDD V(BR)DSS,TJ 150CNotes:Starting TJ = 25C, L = 19mHRG = 25, IAS = 5.5A. (See Figure 12)Pulse width 300s; duty cycle 2%.Cosseff. is a fixed capacitance that gi
25、ves the same charging timeas Coss while VDS is rising from 0 to 80% VDSSIR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: + 44 (0)20 86458000IR CANADA: 15 Lincoln Court, Br
26、ampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: + 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: + 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: + 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 5/00
