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类型SST39VF800(外部FLASH芯片,1MB容量).pdf

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    SST39VF800(外部FLASH芯片 1MB容量).pdf
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    1、1 8Megabit(512Kx16Bit)MultiPurposeFlash SST39VF800Q/SST39VF800 AdvanceInformation 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1999SiliconStorageTechnology,Inc.TheSSTlogoandSuperFlashareregisteredtrademarksofSiliconStorageTechnology,Inc .MPFisatrademarkofSiliconStorageTechnology,Inc. 343042/99 Thesespecif

    2、icationsaresubjecttochangewithoutnotice. FEATURES: Organizedas512KX16 Single2.73.6VReadandWriteOperations V DDQPowerSupplytoSupport5VI/O forSST39VF800Q V DDQnotavailableonSST39VF800 SuperiorReliability Endurance:100,000Cycles(typical) Greaterthan100yearsDataRetention LowPowerConsumption: ActiveCurre

    3、nt:15mA(typical) StandbyCurrent:3A(typical) AutoLowPowerMode:3A(typical) SmallSectorEraseCapability(256sectors) Uniform2KWordsectors BlockEraseCapability(16blocks) Uniform32KWordblocks FastReadAccessTime: 70and90ns LatchedAddressandData FastSectorEraseandWordProgram: SectorEraseTime:18ms(typical) Bl

    4、ockEraseTime:18ms(typical) ChipEraseTime:70ms(typical) WordProgramtime:14s(typical) ChipRewriteTime:8seconds(typical) AutomaticWriteTiming InternalV PP Generation EndofWriteDetection ToggleBit Data#Polling CMOSI/OCompatibility JEDECStandard FlashEEPROMPinoutsandcommandsets PackagesAvailable 48PinTSO

    5、P(12mmx20mm) 6x8BallTFBGA PRODUCTDESCRIPTION TheSST39VF800Q/VF800devicesare512Kx16 CMOSMultiPurposeFlash(MPF)manufacturedwith SSTsproprietary,highperformanceCMOSSuperFlash technology.Thesplitgatecelldesignandthickoxide tunnelinginjectorattainbetterreliabilityand manufacturabilitycomparedwithalternat

    6、eapproaches. TheSST39VF800Q/VF800write(ProgramorErase) witha2.73.6Vpowersupply.TheSST39VF800Q/ VF800conformtoJEDECstandardpinoutsforx16 memories. Featuringhighperformancewordprogram,the SST39VF800Q/VF800devicesprovideatypicalword programtimeof14sec.Theentirememorycantypi callybeerasedandprogrammedwo

    7、rdbywordin8 seconds,whenusinginterfacefeaturessuchasToggle BitorData#PollingtoindicatethecompletionofProgram operation.Toprotectagainstinadvertentwrite,the SST39VF800Q/VF800haveonchiphardwareandsoft waredataprotectionschemes.Designed,manufac tured,andtestedforawidespectrumofapplications,the SST39VF8

    8、00Q/VF800areofferedwithaguaranteed enduranceof10,000cycles.Dataretentionisratedat greaterthan100years. TheSST39VF800Q/VF800devicesaresuitedforappli cationsthatrequireconvenientandeconomicalupdating ofprogram,configuration,ordatamemory.Forallsys temapplications,theSST39VF800Q/VF800signifi cantlyimpro

    9、veperformanceandreliability,whilelower ingpowerconsumption.TheSST39VF800Q/VF800in herentlyuselessenergyduringEraseandProgramthan alternativeflashtechnologies.Thetotalenergycon sumedisafunctionoftheappliedvoltage,current,and timeofapplication.Sinceforanygivenvoltagerange,the SuperFlashtechnologyusesl

    10、esscurrenttoprogramand hasashortererasetime,thetotalenergyconsumed duringanyEraseorProgramoperationislessthan alternativeflashtechnologies.TheSST39VF800Q/ VF800alsoimproveflexibilitywhileloweringthecostfor program,data,andconfigurationstorageapplications. TheSuperFlashtechnologyprovidesfixedEraseand

    11、 Programtimes,independentofthenumberofErase/ Programcyclesthathaveoccurred.Thereforethesys temsoftwareorhardwaredoesnothavetobemodified orderatedasisnecessarywithalternativeflashtech nologies,whoseeraseandprogramtimesincreasewith accumulatedErase/Programcycles. Tomeethighdensity,surfacemountrequirem

    12、ents,the SST39VF800Q/VF800areofferedin48pinTSOPand 48pinTFBGApackages.SeeFigures1and2for pinouts. DeviceOperation Commandsareusedtoinitiatethememoryoperation functionsofthedevice.Commandsarewrittentothe deviceusingstandardmicroprocessorwritesequences. AcommandiswrittenbyassertingWE#lowwhile keepingC

    13、E#low.Theaddressbusislatchedonthe fallingedgeofWE#orCE#,whicheveroccurslast.The databusislatchedontherisingedgeofWE#orCE#, whicheveroccursfirst.2 1999SiliconStorageTechnology,Inc. 343042/99 8MegabitMultiPurposeFlash SST39VF800Q/SST39VF800 AdvanceInformation TheSST39VF800Q/VF800alsohavetheAutoLow Pow

    14、er modewhichputsthedeviceinanearstandbymode afterdatahasbeenaccessedwithavalidreadoperation. ThisreducestheI DD activereadcurrentfromtypically15 mAtotypically3A.TheAutoLowPowermodereduces thetypicalI DD activereadcurrenttotherangeof1mA/MHz ofreadcycletime.ThedeviceexitstheAutoLowPower modewithanyadd

    15、resstransitionorcontrolsignaltransi tionusedtoinitiateanotherreadcycle,withnoaccesstime penalty. Read TheReadoperationoftheSST39VF800Q/VF800 iscon trolledbyCE#andOE#,bothhavetobelowforthesystem toobtaindatafromtheoutputs.CE#isusedfordevice selection.WhenCE#ishigh,thechipisdeselectedand onlystandbypo

    16、werisconsumed.OE#istheoutputcontrol andisusedtogatedatafromthe outputpins.Thedatabus isinhighimpedancestatewheneitherCE#orOE#ishigh. RefertotheReadcycletimingdiagramforfurtherdetails (Figure3). WordProgramOperation TheSST39VF800Q/VF800areprogrammedonaword bywordbasis.TheProgramoperationconsistsofthr

    17、ee steps.Thefirststepisthethreebyteloadsequencefor SoftwareDataProtection.Thesecondstepistoloadword addressandworddata.DuringtheWordProgramopera tion,theaddressesarelatchedonthefallingedgeofeither CE#orWE#,whicheveroccurslast.Thedataislatchedon therisingedgeofeitherCE#orWE#,whicheveroccurs first.The

    18、thirdstepistheinternalProgramoperationwhich isinitiatedaftertherisingedgeofthefourthWE#orCE#, whicheveroccursfirst.TheProgramoperation,onceiniti ated,willbecompletedwithin20s.SeeFigures4and5 forWE#andCE#controlledProgramoperationtiming diagramsandFigure16forflowcharts.DuringthePro gramoperation,theo

    19、nlyvalidreadsareData#Pollingand ToggleBit.DuringtheinternalProgramoperation,thehost isfreetoperformadditionaltasks.Anycommandsissued duringtheinternalProgramoperationareignored. Sector/BlockEraseOperation TheSector/BlockEraseoperationallowsthesystemto erasethedeviceonasectorbysector(orblockbyblock)

    20、basis.TheSST39VF800Q/VF800offerbothsmallSector EraseandBlockErasemode.Thesectorarchitectureis basedonuniformsectorsizeof2KWord.TheBlockErase modeisbasedonuniformblocksizeof32KWord.The SectorEraseoperationisinitiatedbyexecutingasixbyte commandsequencewithSectorErasecommand(30H) andsectoraddress(SA)in

    21、thelastbuscycle.Theaddress linesA11A18areusedtodeterminethesectoraddress. TheBlockEraseoperationisinitiatedbyexecutingasix bytecommandsequencewithBlockErasecommand (50H)andblockaddress(BA)inthelastbuscycle.The addresslinesA15A18areusedtodeterminetheblock address.Thesectororblockaddressislatchedonthe

    22、 fallingedgeofthesixthWE#pulse,whilethecommand (30Hor50H)islatchedontherisingedgeofthesixthWE# pulse.TheinternalEraseoperationbeginsafterthesixth WE#pulse.TheendofEraseoperationcanbedetermined usingeitherData#PollingorToggleBitmethods.See Figures9and10fortimingwaveforms.Anycommands issuedduringtheSe

    23、ctororBlockEraseoperationare ignored. ChipEraseOperation TheSST39VF800Q/VF800provideaChipEraseopera tion,whichallowstheusertoerasetheentirememoryarray tothe“1”state.Thisisusefulwhentheentiredevicemust bequicklyerased. TheChipEraseoperationisinitiatedbyexecutingasix bytecommandsequencewithChipEraseco

    24、mmand (10H)ataddress5555Hinthelastbytesequence.The Eraseoperationbeginswiththerisingedgeofthesixth WE#orCE#,whicheveroccursfirst.DuringtheErase operation,theonlyvalidreadisToggleBitorData#Polling. SeeTable4forthecommandsequence,Figure8fortiming diagram,andFigure19fortheflowchart.Anycommands issueddu

    25、ringtheChipEraseoperationareignored. WriteOperationStatusDetection TheSST39VF800Q/VF800providetwosoftwaremeans todetectthecompletionofawrite(ProgramorErase) cycle,inordertooptimizethesystemwritecycletime.The softwaredetectionincludestwostatusbits:Data#Polling (DQ 7)andToggleBit(DQ 6).Theendofwritede

    26、tection modeisenabledaftertherisingedgeofWE#,which initiatestheinternalprogramoreraseoperation. Theactualcompletionofthenonvolatilewriteisasynchro nouswiththesystem;therefore,eitheraData#Pollingor ToggleBitreadmaybesimultaneouswiththecompletion ofthewritecycle.Ifthisoccurs,thesystemmaypossibly getan

    27、erroneousresult,i.e.,validdatamayappearto conflictwitheitherDQ 7 orDQ 6 .Inordertopreventspurious rejection,ifanerroneousresultoccurs,thesoftwarerou tineshouldincludealooptoreadtheaccessedlocationan additionaltwo(2)times.Ifbothreadsarevalid,thenthe devicehascompletedthewritecycle,otherwisetherejec t

    28、ionisvalid. Data#Polling(DQ 7 ) WhentheSST39VF800Q/VF800areintheinternalPro gramoperation,anyattempttoreadDQ 7 willproducethe complementofthetruedata.OncetheProgramoperation iscompleted,DQ 7 willproducetruedata.Thedeviceis3 1999SiliconStorageTechnology,Inc. 343042/99 8MegabitMultiPurposeFlash SST39V

    29、F800Q/SST39VF800 AdvanceInformation 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 TABLE1:P RODUCTI DENTIFICATIONT ABLE Address Data ManufacturersCode 0000H 00BFH DeviceCode 0001H 2781H 343PGMT1.0 thenreadyforthenextoperation.DuringinternalErase operation,anyattempttoreadDQ7willproducea0.Once theinternalEra

    30、seoperationiscompleted,DQ7willpro ducea1.TheData#Pollingisvalidaftertherisingedge offourthWE#(orCE#)pulseforProgramoperation.For Sector,BlockorChipErase,theData#Pollingisvalidafter therisingedgeofsixthWE#(orCE#)pulse.SeeFigure6 forData#PollingtimingdiagramandFigure17fora flowchart. ToggleBit(DQ 6) D

    31、uringtheinternalProgramorEraseoperation,anycon secutiveattemptstoreadDQ 6 willproducealternating1s and0s,i.e.,togglingbetween1and0.Whentheinternal ProgramorEraseoperationiscompleted,theDQ6bitwill stoptoggling.Thedeviceisthenreadyforthenextopera tion.TheToggleBitisvalidaftertherisingedgeoffourth WE#(

    32、orCE#)pulseforProgramoperation.ForSector, BlockorChipErase,theToggleBitisvalidaftertherising edgeofsixthWE#(orCE#)pulse.SeeFigure7forToggle BittimingdiagramandFigure17foraflowchart. DataProtection TheSST39VF800Q/VF800providebothhardwareand softwarefeaturestoprotectnonvolatiledatafrominadvert entwrit

    33、es. HardwareDataProtection Noise/GlitchProtection:AWE#orCE#pulseoflessthan 5nswillnotinitiateawritecycle. V DDPowerUp/DownDetection:TheWriteoperationis inhibitedwhenV DDislessthan1.5V. WriteInhibitMode:ForcingOE#low,CE#high,orWE# highwillinhibittheWriteoperation.Thispreventsinadvert entwritesduringp

    34、oweruporpowerdown. SoftwareDataProtection(SDP) TheSST39VF800Q/VF800providetheJEDECapproved SoftwareDataProtectionschemeforalldataalteration operations,i.e.,ProgramandErase.AnyProgramopera tionrequirestheinclusionofthethreebytesequence.The threebyteloadsequenceisusedtoinitiatetheProgram operation,pro

    35、vidingoptimalprotectionfrominadvertent Writeoperations,e.g.,duringthesystempowerupor powerdown.AnyEraseoperationrequirestheinclusionof sixbytesequence.TheSST39VF800Q/VF800devices areshippedwiththesoftwaredataprotectionpermanently enabled.SeeTable4forthespecificsoftwarecommand codes.DuringSDPcommands

    36、equence,invalidcom mandswillabortthedevicetoreadmodewithinT RC.The contentsofDQ 15DQ 8are“DontCare”duringanySDP commandsequence. CommonFlashMemoryInterface(CFI) TheSST39VF800Q/VF800alsocontaintheCFIinforma tiontodescribethecharacteristicsofthedevice.Inorderto entertheCFIQuerymode,thesystemmustwritet

    37、hree bytesequence,sameasproductIDentrycommandwith 98H(CFIQuerycommand)toaddress5555Hinthelast bytesequence.OncethedeviceenterstheCFIQuery mode,thesystemcanreadCFIdataattheaddressesgiven intables5through7.ThesystemmustwritetheCFIExit commandtoreturntoReadmodefromtheCFIQuery mode. ProductIdentificatio

    38、n TheProductIdentificationmodeidentifiesthedevicesas theSST39VF800Q,SST39VF800andmanufactureras SST.Thismodemaybeaccessedbyhardwareorsoftware operations.Thehardwareoperationistypicallyusedbya programmertoidentifythecorrectalgorithmforthe SST39VF800Q/VF800.UsersmaywishtousetheSoft wareProductIdentifi

    39、cationoperationtoidentifythepart (i.e.,usingthedevicecode)whenusingmultiplemanufac turersinthesamesocket.Fordetails,seeTable3for hardwareoperationorTable4forsoftwareoperation, Figure11fortheSoftwareIDEntryandReadtiming diagramandFigure18fortheIDEntrycommandsequence flowchart. ProductIdentificationMo

    40、deExit/CFIModeExit InordertoreturntothestandardReadmode,theSoftware ProductIdentificationmodemustbeexited.Exitisaccom plishedbyissuingtheSoftwareIDExitcommandse quence,whichreturnsthedevicetotheReadoperation. Thiscommandmayalsobeusedtoresetthedevicetothe Readmodeafteranyinadvertenttransientcondition

    41、that apparentlycausesthedevicetobehaveabnormally,e.g., notreadcorrectly.PleasenotethattheSoftwareIDExit/CFI ExitcommandisignoredduringaninternalProgramor Eraseoperation.SeeTable4forsoftwarecommandcodes, Figure13fortimingwaveformandFigure18foraflowchart. V DDQ I/OPowerSupply Thisfeatureisavailableonl

    42、yontheSST39VF800Q.This pinfunctionsaspowersupplypinforinput/outputbuffers.It shouldbetiedtoV DD (2.73.6V)ina3.0Vonlysystem.It shouldbetiedtoa5.0V10%(4.55.5V)powersupplyina mixedvoltagesystemenvironmentwhereflashmemory hastobeinterfacedwith5Vsystemchips.TheV DDQ pinis notofferedontheSST39VF800,insteaditisaNoConnect pin.4 1999SiliconStorageTechnology,Inc. 343042/99 8MegabitMultiPurposeFlash SST39VF800Q/SST39VF800 AdvanceInformation FIGURE1:P INA SSIGNMENTS

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