1、SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3320 DESCRIPTION With TO-3PN package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIP
2、TION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT V CBO Collector-base voltage Open emitter 500 V V CEO Collector-emitter voltage Open base 400 V V EBO Emitter-base voltage Open collector 7 V I C Collector current 15 A
3、 IB Base current 5 A P C Collector power dissipation T C=25 80 W Tj Junction temperature 150 T stg Storage temperature -65150 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th (j-c) Thermal resistance from junction to case 1.56 /W Fig.1 simplified outline (TO-3PN) and symbol SavantIC Semicond
4、uctor Product Specification 2 Silicon NPN Power Transistors 2SC3320 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ;I B=0 400 V V (BR)CBO Collector-base breakdown voltage I C=1mA ;I E=0 500 V V (BR)
5、EBO Emitter-base breakdown voltage I E=1mA ;I C=0 7 V V CEsat Collector-emitter saturation voltage IC=6A; I B=1.2A 1.0 V V BEsat Base-emitter saturation voltage IC=6A ;I B=1.2A 1.5 V I CBO Collector cut-off current V CB=500V; I E=0 1.0 mA I EBO Emitter cut-off current V EB=7V; I C=0 1.0 mA h FE DC c
6、urrent gain I C=6A ; V CE=5V 10 Switching times resistive load t on Turn-on time 0.5 s t s Storage time 1.5 s t f Fall time I C=7.5A I B1=1.5A I B2=-3A R L=20C P W=20s;Duty=2% 0.15 s SavantIC Semiconductor Product Specification 3 Silicon NPN Power Transistors 2SC3320 PACKAGE OUTLINE Fig.2 outline dimensions(unindicated tolerance:0.10 mm) SavantIC Semiconductor Product Specification 4 Silicon NPN Power Transistors 2SC3320
