1、SymbolVDSVGSIDMTJ, TSTGSymbol Typ Max65 9085 125RJL43 60WMaximum Junction-to-Lead CSteady-State C/WThermal CharacteristicsParameter UnitsMaximum Junction-to-Ambient At 10sRJAC/WMaximum Junction-to-Ambient ASteady-StateC/W12Gate-Source VoltageDrain-Source Voltage 30Continuous Drain Current AMaximum U
2、nitsParameterTA=25CTA=70CAbsolute Maximum Ratings TA=25C unless otherwise notedVV4.930Pulsed Drain Current BPower Dissipation ATA=25CJunction and Storage Temperature RangeAPDC1.41-55 to 150TA=70CID5.8PL4009N-Channel Enhancement Mode Field Effect TransistorFeaturesVDS(V) = 30VID= 5.8 A (VGS= 10V)RDS(
3、ON) 28m (VGS= 10V)RDS(ON) 33m (VGS= 4.5V)RDS(ON) 52m (VGS= 2.5V)General DescriptionThe PL4009 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standa
4、rd Product PL4009 is Pb-free (meets ROHS & Sony 259 specifications).PL4009A is a Green Product ordering option. PL4009 and PL4009A are electrically identical.G D S SGDTO-236(SOT-23)Top ViewPuLan Technology, Ltd.Symbol Min Typ Max UnitsBVDSS30 V1TJ=55C 5IGSS100 nAVGS(th)0.7 1.1 1.4 VID(ON)30 A22.8 28
5、TJ=125C 32 3927.3 33m43.3 52mgFS10 15 SVSD0.71 1 VIS2.5 ACiss823 1030 pFCoss99 pFCrss77 pFRg1.2 3.6 Qg9.7 12 nCQgs1.6 nCQgd3.1 nCtD(on)3.3 5 nstr4.8 7 nstD(off)26.3 40 nstf4.1 6 nstrr16 20nsQrr8.9 12 nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRIT
6、ICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Gate resistance VGS=0V, VDS=0V, f=1MHzTurn-Off F
7、all TimeMaximum Body-Diode Continuous CurrentInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERSIF=5A, dI/dt=100A/sVGS=0V, VDS=15V, f=1MHzSWITCHING PARAMETERSTotal Gate ChargeVGS=4.5V, VDS=15V, ID=5.8AGate Source ChargeGate Drain ChargeTurn-On Rise TimeTurn-Off DelayTimeVGS=10V, V
8、DS=15V, RL=2.7, RGEN=3mVGS=4.5V, ID=5A IS=1A,VGS=0VVDS=5V, ID=5ARDS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward VoltageIDSSAGate Threshold Voltage VDS=VGS ID=250AVDS=24V, VGS=0V VDS=0V, VGS=12VZero Gate Voltage Drain CurrentGate-Body leakage currentElectrical Characteri
9、stics (TJ=25C unless otherwise noted)STATIC PARAMETERSParameter ConditionsBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeIF=5A, dI/dt=100A/sDrain-Source Breakdown VoltageOn state drain currentID=250A, VGS=0V VGS=2.5V, ID=4A VGS=4.5V, VDS=5VVGS=10V, ID=5.8A Reverse Transfer Capacit
10、anceA: The value of RJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the users specific board design. The current rating is based on the t 10s thermal resistance rating.B: Repetitive rati
11、ng, pulse width limited by junction temperature.C. The RJAis the sum of the thermal impedence from junction to lead RJLand lead to ambient.D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on
12、 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4 : June 2005PuLan Technology, Ltd.PL4009TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0510152025012345VDS(Volts)Fig 1: On-Region CharacteristicsID(A)VGS=2V2.5V3V4.5V10V048121
13、6200 0.5 1 1.5 2 2.5 3VGS(Volts)Figure 2: Transfer CharacteristicsID(A)1020304050600 5 10 15 20ID(A)Figure 3: On-Resistance vs. Drain Current andGate VoltageRDS(ON)(m)1.0E-061.0E-051.0E-041.0E-031.0E-021.0E-011.0E+001.0E+010.0 0.2 0.4 0.6 0.8 1.0 1.2VSD(Volts)Figure 6: Body-Diode CharacteristicsIS(A
14、)25C125C0.811.21.41.61.80 25 50 75 100 125 150 175Temperature (C)Figure 4: On-Resistance vs. JunctionTemperatureNormalizedOn-ResistanceVGS=2.5VVGS=10VVGS=4.5V102030405060700246810VGS(Volts)Figure 5: On-Resistance vs. Gate-Source VoltageRDS(ON)(m)25C125CVDS=5VVGS=2.5VVGS=4.5VVGS=10VID=5A25C125CPuLan
15、Technology, Ltd.PL4009PL4009TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS012345024681012Qg(nC)Figure 7: Gate-Charge CharacteristicsVGS(Volts)02004006008001000120014000 5 10 15 20 25 30VDS(Volts)Figure 8: Capacitance CharacteristicsCapacitance (pF)Ciss0102030400.001 0.01 0.1 1 10 100 1000Pulse Width
16、 (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)Power(W)0.010.11100.00001 0.0001 0.001 0.01 0.1 1 10 100 1000Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal ImpedanceZJANormalizedTransient ThermalResistanceCossCrss0.11.010.0100.00.1 1 10 100VDS(Volts)ID(Amps)Figure 9: Maximum Forward Biased Safe Operating Area (Note E)100s10ms1ms0.1s1s10sDCRDS(ON) limitedTJ(Max)=150CTA=25CVDS=15VID=5ASingle PulseD=Ton/TTJ,PK=TA+PDM.ZJA.RJARJA=90C/WTonTPDIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulseTJ(Max)=150CTA=25CPuLan Technology, Ltd.
