1、-0-PCM IntroductionXuBQ 2010-09-09-1-Process Control Monitor (PCM)= Wafer Acceptance Test (WAT) = Electrical Test (E-test)-2- 监控在线工艺对电参数的影响，以及工艺的波动； PCM一般判定规则 : （ 1）根据 PCM checklist，形成一个 PCM summary测试参数组；（ 2）每片圆片通常都会测试 (上中下左右） 5个位置；（ 3）任何参数项的 5个数据，失效数 =3，则该圆片的 PCM参数失效则该wafer失效；（ 4）否则，该 wafer的 PCM参数
2、pass； 判定 wafer Pass/Fail的一个重要依据，客户会根据 PCM测试情况，决定接收、拒收还是有条件接收 wafer。PCM工序的作用-3-光纤HP-UX工作站外置测试仪4284/3458/8110探针台CPUSMUGNDUSWMTEST HEADGPIB探针卡Hardware structure(AG-4072/prober)-4-包括 I-V、 C-V两类IV： SMU、 VSU、 VMU、 PGU；CV： 4280/4284；以及万用表 3457/3458;SMU Source Measurement Unit; VMU Voltage Measurement Unit;
3、VSU Voltage Source Unit; PGU Pulse Generate Unit; GuardGNDForceTester 基本部分-5-RUN START检查硬件LOAD PROG选择测试文件根据输入产品信息，自动选择 WAFER文件；TESTS.6； ALGS.4072；TSTLST；测试项测试循环结束测试Master.6bcTESTSUBS.6测试程序运作过程-6-NW/PWActiveVT IMPGOXPOLY LDDSPACERS/DContactM1 D2M2PassivationFOX(IMP, FOX)VIAD1, reflowENDAlloyCMOS简易流程-
4、7-WELL:R, BVActive/Field:Vtf,junction BVVT IMP:MOS VTGOX:Tox, BVPOLY:R, LeffLDD/SPACER:MOS IonMOS BVFOX punch throughS/D:N+/P+ R, BVCont RContact:R CONT, ReliabilityM1:M1 SHEET RM1 COM/MNDD2:M2/M1 CAPVIAPassivation:VIA:VIA R, reliabilityD1, reflow:M1 COMB, MEANDM1-G FOX, M1/PLY CAPENDAlloy:MOS VTM2:
5、M2 SHEET RM2 COM/MNDCMOS简易流程中的重要参数-8-Key PCM Group -I Resistance Capacitance Sheet resistance Contact resistance Intra-layer capacitance Inter-layer capacitance N-well, P-well, n-LDD, p-LDD, n-S/D, p-S/D, n-poly gate, p-poly gate, silicide region, metal, etc. S/D-metal, silicide-metal, S/D-silicide,
6、 poly-metal, metal-metal, etc. Poly-poly, metal-metal G-channel, G-S/D, G-ISO, M-G,M-sub, M-M, etc.-9- Isolation Continuity Device isolationInterconnect isolationActive aream poly-si, silicide area, metal-line, etc. Intra-well isolation, inter-well isolationPoly-poly, metal-metalKey PCM Group -II-10
7、- Leakage MOSFET BJT Junction leakageThin dielectric leakageIntra/inter line leakageVth(lin), Vth(sat), Gm(lin), Id(sat), Swing, Ig, BVd/sgt, BVsd/gt, BVsdg/tHfe, Va, Bvceo, Bvcbo, BveboBulk, AA edge, spacer edge, small silicide areaGate oxide, tunneling oxide, capacitor dielectricILD/IMD leakage, d
8、ielectric interface leakageKey PCM Group -III-11-NXSTRW（N管参数） PXSTRW（P 管参数） NPLUS（N+RES，Rc ） PPLUS（P+RES，Rc）PCM测试常用模块介绍-12-CAPNP（NGOX,PGOX)TUBS(NTUB VDP, Via chain）M1LSVDP(M1 VDP)PTRANW2(Via stitch)PCM测试常用模块介绍-13-CAPPC（Inter-Poly Cap)PGT(POLY VDP, Cont Res)PCM测试常用模块介绍-14-1, Van Der Pauw (be not affe
9、cted by W)PCM name: XXX SHEET RESTest method: force I, measure V, Res=4.532*V/I2, Line structure resistor (2-term, 4-term kelvin) (can be affected by W)PCM name: XXX L/W RESK (if Kelvin, add K)Test method: KELVIN, force I, measure V, R=V/I2-term, directly measure RsquareRsWLTTWLR . =AB344321VSheet R
10、esistanceVan Der PauwLine Structure-15-1, Single window KELVIN contact (should be L shape)PCM name: XXX Cont RESTest method: force I, measure V, Rc=V/I2, Contact chainPCM name: XXX A*B Rc (A size; B contact number)Test method: force I, measure V, Rc=V/I/B1234VContact ResistanceKelvin ContactContact
11、Chain-16-1, Threshold Voltage in linear region (Max gm)PCM name: Vth(lin)Test method: Vds=0.1V, Vs=Vb=Gnd, Sweep Vgs, Measure Id, Get the GmThreshold Voltage 5.0)().5.0)(max=gmVgsVthVdsLWCoxVgsIdsGmVdsVdsVthVgsLWCoxIds|0.1V| G D S SUB 接地WELL-17-2, Threshold Voltage in linear region ( Ids approximati
12、on)PCM name: Vth(lin)Test method: Vds=0.1V, Vs=Vb=Gnd, Sweep Vgs, Measure Id, Get the VgsIds=1uAThreshold Voltage uAIdsVgsVthVthVgsLWCoxIds1)(212= 影响因素：9 沟道注入异常导致开启电压失效；9 注入损伤或刻蚀损伤在退火过程中没有消除；9 衬底的浓度异常或阱注入异常；9 栅氧化层的厚度异常；9 沟道的长度异常（对于沟长较短的管子影响比较明显）；-18-3, Threshold Voltage in saturation region (Max gm2
13、)PCM name: Vth(sat)Test method: Vds=Vgs, Vs=Vb=Gnd, sweep Vgs and measure Ids, get the gm, and get the intercept of Vgs axis as Vth.Threshold Voltage VgsIdsGmVthVgsLWCoxIds=2)(212影响因素：9 沟道注入异常导致开启电压失效；9 注入损伤或刻蚀损伤在退火过程中没有消除；9 衬底的浓度异常或阱注入异常；9 栅氧化层的厚度异常；9 沟道的长度异常（对于沟长较短的管子影响比较明显）；-19-Breakdown VoltageP
14、CM name: (1) Bvd/sgt, (2) Bvsd/gt, (3) Bvsdg/tTest method: for Bvd/sgt, sweep Vds, Vs=Vg=Vb=Gnd, Measure IdsBVd/sgt=VdsIds=1uAVGATED S SUB 接地-20-Always test 3 BV for a device:1#, BVd/sgt; 2#, BVsd/gt; 3#, BVt/sdgTest 3 BV, is helpful to find out the root reason directly from PCM data.Eg. 1# low, oth
15、er 2 ok, D to S have leakage2# low, other 2 ok, S to G have leakage3# low, other 2 ok, G to SUB have leakageA comment is, because BV test can damage device, we need analyze together with other data. Breakdown Voltage影响因素：9 衬底浓度太浓会造成单结击穿电压偏小；9 沟效应会造成源漏串通电压偏小；9 栅氧的质量也会影响击穿电压的值；-21-Saturation currentPC
16、M name: Ids(sat)Test method: Vs=Vb=Gnd, Vg=Vd=Vdd, Measure Ids2)(21VthVgsLWCoxIds = VddGD S SUB 接地影响因素：9 衬底浓度的高低与 Ion存在反比的关系；9 短沟时 Ion 会偏大；9 栅氧偏薄会造成 Ion 偏大；9 对于有沟注的产品，沟注剂量大小也会影响 Ion的值；-22-N 20/0.5 Id0.0E+002.0E-034.0E-036.0E-038.0E-031.0E-020.0 1.0 2.0 3.0 4.0VgsIdsN 20/0.5 I-V0.0E+003.0E-036.0E-039
17、.0E-030.0 1.0 2.0 3.0 4.0VdsIdsVgs=0.8Vgs=1.471Vgs=2.146Vgs=2.821Vgs=3.5N 20/20 I-V0.E+001.E-042.E-043.E-044.E-045.E-040.0 1.0 2.0 3.0 4.0VdsIds Vgs= 0.75Vgs=1.435Vgs= 2.123Vgs= 2.811Vgs= 3.5N 20/20 Idy = 5E-05x2- 4E-05x + 4E-060.0E+001.0E-042.0E-043.0E-044.0E-045.0E-040.0 1.0 2.0 3.0 4.0VgsIdsIds-V
18、gs / Ids-Vds curve-23-Id-Vd0.0E+002.0E-034.0E-036.0E-038.0E-031.0E-021.2E-020246VdsIdsVg=0.5Vg=2Vg=3.5Vg=5IsubVds=5V-8.E-05-7.E-05-6.E-05-5.E-05-4.E-05-3.E-05-2.E-05-1.E-050.E+001.E-0500.4 0.8 1.21.6 22.42.8 3.2 3.644.44.8VgIsub0.E+002.E-034.E-036.E-038.E-031.E-021.E-02IdsIsbIdPCM name: IsubBias Vds
19、=Vdd, sweep Vgs to find the peak substrate current.*Large Isub can trigger latchupSubstrate Current-24-Continuity PNP HFEIe=xTest method: Vce=-5v, Ib=x2, BV (BVceo, BCVcbo, BVebo)PCM name: PNP BvceoTest method: force 1uA, meausre V.CBEa b c d e fPsubNWP+ N+N+ P+P+EBCBipolar Junction Transistor-28-PCM参数项目名称简述-29-PCM参数项目名称简述
