收藏 分享(赏)

高速光耦TLP181.pdf

上传人:精品资料 文档编号:8537268 上传时间:2019-07-02 格式:PDF 页数:9 大小:173.34KB
下载 相关 举报
高速光耦TLP181.pdf_第1页
第1页 / 共9页
高速光耦TLP181.pdf_第2页
第2页 / 共9页
高速光耦TLP181.pdf_第3页
第3页 / 共9页
高速光耦TLP181.pdf_第4页
第4页 / 共9页
高速光耦TLP181.pdf_第5页
第5页 / 共9页
点击查看更多>>
资源描述

1、TLP181 2007-10-01 1TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP181 Office Machine Programmable Controllers AC / DC Input Module Telecommunication The TOSHIBA mini flat coupler TLP181 is a small outline coupler, suitable for surface mount assembly. TLP181 consist of a photo transistor optica

2、lly coupled to a gallium arsenide infrared emitting diode. Collector emitter voltage: 80V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 3750Vrms (min.) UL recognized: UL1577, file no. E67349 Option (V4) type VDE approved: EN 60747-5-2 satisfied Maximum operating i

3、nsulation voltage: 565VPK Highest permissible over voltage: 6000VPK BSI approved: BS EN60065:2002, certificate no.8285 BS EN60950-1:2002, certificate no.8286 Pin Configuration (top view) 6 1: Anode 3: Cathode 4: Emitter 6: Collector 4 1 3Unit in mmTOSHIBA 11 4C1 Weight: 0.09 g TLP181 2007-10-01 2 Cu

4、rrent Transfer Ratio Current Transfer Ratio (%) (I C/ I F ) I F= 5mA, V CE= 5V, Ta = 25C Type Classification *1 Min. Max. Marking Of Classification (None) 50 600 BLANK, Y, Y , G, G , B, B , GB Rank Y 50 150 Y, Y Rank GR 100 300 G, G Rank BL 200 600 B, B TLP181 Rank GB 100 600 G, G , B, B , GB *1: EX

5、, Rank GB: TLP181 (GB) (Note) Application, type name for certification test, please use standard product type name, i, e. TLP181 (GB): TLP181 TLP181 2007-10-01 3 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I F50 mA Forward current detating I F/ C 0.7 (Ta 53C

6、) mA / C Pulse forward current (100 s pulse, 100pps) I FP1 A Reverse voltage V R5 V LED Junction temperature T j125 C Collectoremitter voltage V CEO80 V Emittercollector voltage V ECO7 V Collector current I C50 mA Collector power dissipation (1 Circuit) P C150 mW Collector power dissipation derating

7、 (1 Circuit Ta 25C) P C/ C 1.5 mW / C Detector Junction temperature T j125 C Storage temperature range T stg55125 C Operating temperature range T opr55100 C Lead soldering temperature T sol260 (10s) C Total package power dissipation P T200 mW Total package power dissipation derating (Ta 25C) P T/ C

8、2.0 mW / C Isolation voltage (AC, 1min., R.H. 60%) (Note 1) BV S3750 V rmsNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

9、the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliabil

10、ity data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a twoterminal device: Pin1, 3 shorted together and pins 4, 6 shorted together Recommended Operating Conditions Characteristic Symbol Min.Typ.Max.Unit Supply voltage V CC 5 48 V Forward current I F 16

11、20 mA Collector current I C 1 10 mA Operating temperature T opr25 85 C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, plea

12、se confirm specified characteristics shown in this document. TLP181 2007-10-01 4 Individual Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min. Typ. Max.Unit Forward voltage V FI F = 10 mA 1.0 1.15 1.3 V Reverse current I RV R= 5 V 10 A LED Capacitance C TV = 0, f = 1 MHz

13、 30 pF Collectoremitter breakdown voltage V (BR) CEOI C= 0.5 mA 80 V Emittercollector breakdown voltage V (BR) ECOI E= 0.1 mA 7 V V CE= 48 V, ( Ambient light below 1000 lx) 0.01 (2) 0.1 (10) A Collector dark current I CEOV CE= 48 V, Ta = 85C, ( Ambient light below 1000 lx) 2 (4) 50 (50) A Detector C

14、apacitance (collector to emitter) C CEV = 0, f = 1 MHz 10 pF Coupled Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition MIn. Typ. Max.Unit 50 600 Current transfer ratio I C/ I F I F= 5 mA, V CE= 5 V Rank GB 100 600 % 60 Saturated CTR I C/ I F (sat) IF = 1 mA, V CE= 0.4 V Rank

15、 GB 30 % I C= 2.4 mA, I F= 8 mA 0.4 0.2 Collectoremitter saturation voltage V CE (sat) I C= 0.2 mA, I F= 1 mA Rank GB 0.4 V Offstate collector current I C (off)V F= 0.7V, V CE= 48 V 1 10 A Isolation Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min. Typ. Max.Unit Capacitance (input

16、 to output) C S V S= 0V, f = 1 MHz 0.8 pF Isolation resistance R S V S= 500 V, R.H. 60% 110 12 10 14 AC, 1 minute 3750 AC, 1 second, in oil 10000 V rms Isolation voltage BV S DC, 1 minute, in oil 10000 V dcTLP181 2007-10-01 5 Switching Characteristics (Ta = 25C) Characteristic Symbol Test Condition

17、Min. Typ. Max.Unit Rise time t r 2 Fall time t f 3 Turnon time t on 3 Turnoff time t off V CC= 10 V, I C= 2 mA R L= 100 3 s Turnon time t ON 2 Storage time t s 25 Turnoff time t OFF R L= 1.9 k (Fig.1) V CC= 5 V, I F= 16 mA 40 s Fig. 1 Switching time test circuit t OFFt ON V CE I F t S 4.5V 0.5V I FV

18、 CC R LV CETLP181 2007-10-01 6P C Ta 200 20 0 20 40 60 80 100 120 160 120 80 40 0Allowable collector power dissipation P C(mW) Ambient temperature Ta (C) I FP D RDuty cycle ratio D RPulse forward current I FP (mA) 3000 10 3 Pulse width 100 s Ta = 25C 10 33 10 2 3 10 13 10 030 50 100 300 1000 500 V F

19、 /Ta I FForward current I F(mA) Forward voltage temperature coefficient V F / Ta (mV / C) 3.2 0.4 0.1 2.8 2.4 2.0 1.6 1.2 0.8 0.3 0.5 1 3 5 10 30 50 I FP V FPPulse forward voltage V FP(V) 1000 1 0.6 Pulse width 10 s Repetitive frequency = 100Hz Ta = 25C 500 300 100 50 30 10 5 3 1.0 1.4 1.8 2.2 2.6 3

20、.0 Pulse forward current I FP (mA) I F Ta Ambient temperature Ta (C) Allowable forward current I F(mA) 100 20 80 60 40 20 0 0 20 40 60 80 100 120 I F V FForward voltage V F(V) Forward current I F(mA) 100 0.001 0 10 1 0.1 0.01 0.4 0.8 1.2 1.6 2 25C 85C 25 CTLP181 2007-10-01 7Collector current I C(mA)

21、 I C V CE50 0 Collector-emitter voltage V CE(V) 0 40 30 20 10 2 4 6 8 10 50mA 30mA 20mA 15mA 10mA P C (MAX.) I F = 5mA Ta = 25C Collector-emitter voltage V CE(V) I C V CE30 0 0 1.0 0.2 0.4 0.6 0.8 20 10Collector current I C(mA) 50mA Ta = 25C 40mA 30mA 20mA 10mA 5mA 2mA I C I FForward current I F(mA)

22、 0.1 0.1 0.3 0.5 1 3 5 10 30 50 100 0.3 0.5 1 3 5 10 30 50 Sample A Sample B Ta = 25C V CE= 10V V CE= 5V V CE= 0.4VCollector current I C(mA) Forward current I F(mA) 1000 10 I C/ I F I F0.1 0.3 0.5 1 3 5 10 30 50 30 50 100 300 500 V CE = 10V V CE= 5V V CE= 0.4V Ta = 25C Current transfer ratio I C/ I

23、F(%) Sample B Sample A Collector dark current I D(I CEO ) ( A) I CEO Ta 0 10 1 V CE= 48V 5V 10V 24V 20 40 60 80 100 Ambient temperature Ta (C) 10 0 10 1 10 2 10 3 10 4TLP181 2007-10-01 8Collector-emitter saturation voltage V CE(sat)(V) V CE(sat) Ta 0.24 0 Ambient temperature Ta (C) 40 0.20 0.12 0.08

24、 0.04 20 0 40 80 100 20 60 0.16 I F= 1mA I C= 0.2mA I C Ta 100 1 20 100 0 20 40 80 30 5Collector current I C(mA) V CE= 5V 60 0.1 0.3 0.5 3 10 50 1mA 0.5mA 5mA 10mA I F = 25mA Ambient temperature Ta (C) Switching Time R LLoad resistance R L(k ) 1 10 30 50 100 300 500 1000 3 5 30 50 Switching time ( s

25、) 5 3 1 Ta = 25C I F= 16mA V CC= 5V t OFFt st ON100 10 Switching time ( s) Switching Time Ta 0 160 20 20 40 60 80 Ambient temperature Ta (C) 30 10 1 0.5 0.1 100 0.3 3 5 50 t OFF t st ONI F= 16mA V CC= 5V RL = 1.9k TLP181 2007-10-01 9RESTRICTIONS ON PRODUCT USE 20070701-EN The information contained h

26、erein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the respon

27、sibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In dev

28、eloping your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semi

29、conductor Reliability Handbook” etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intend

30、ed nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments

31、, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be us

32、ed or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements

33、of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not b

34、reak, cut, crush or dissolve chemically. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 企业管理 > 管理学资料

本站链接:文库   一言   我酷   合作


客服QQ:2549714901微博号:道客多多官方知乎号:道客多多

经营许可证编号: 粤ICP备2021046453号世界地图

道客多多©版权所有2020-2025营业执照举报