1、19 W: =Sv1 SVol.19, No.6 20036 NATURAL SCIENCES JOURNAL OF HARBIN NORMALUNIVERSITY 7 张晓晔 白 晶 段福莲(W: =Sv)【K1】 本文从电场强度、电势两方面探讨了静电屏蔽的物理原理以及静电屏蔽的实质.1oM:静电屏蔽;场强;电势l :2003-11-200 引言 ,( 、H,H) 1 u, 7.7s 7、H 7、H 7 H . 7 “5 G , 7 T 3r Y,V7“ u” ! p, .|“) 7 # 7.1 静电屏蔽的物理原理|8Ab E ,8A =0E 0T/M.8 、.yN3BFE ,iE 0Q_,
2、N8A =9 , 8V .yN 8 = V ?,8 M,B 8. b8 T, T T = ,5 T =9 V ? , y A L .; , T8= , L , ? T =,A T = H、,7 T = T b8 s 8 =Y. 7, LC 7、 7,7 L5 ,h“ . I D1 I.H . ,1980,12,12 I. a,Y, I. .,1985,6,13 i ,I. .=,THE PHYSICAL PRINCIPLE OF ELECTROSTATIC SHIELDZhang Xiaoye Bai Jing Duan Fulian(Harbin NormalUniversity)ABSTRACTThis work approaches thephysicalprincipleof electrostaticshield from electric field intensity and electricpotential.Keywords:Electrostatic shield;Electric field intensity;Electric potential32W: =Sv1 S 2003 M
