1、二氧化锡气体传感器敏感机理的研究*席彩红, null 高晓平, null 刘国汉( 8 S . / , 730000, 8 g )null null K 1 : H o + % 8 V 8 Freundlich w SnO2 8 i a T W 1 “ , Mathematica E null i 1 “ E ,s E T L= k T s . Y V 1 V 5000 10null6 / , E 8 i / t , E T B , i , E M t ,/ , d z . I n r Y ,| + d, B! a h l V i / F .1 o M : = 8 . ; ; Freundli
2、ch ; m s | : 212.2 null null null D S M :A null null null c I | :1001null5337( 2008) 02null0065null04null null V 8 q 3 , 8 8 . X E M ? Z 1 . 1962 M Fafuchi T W n SnO2 8 . ,i 1968 ML C , v w 8 q ? Z 2null3 . t M , z 8 SnO2 + ? 5 1, 8 H , |h ,y N i b v _ 8 , G/ G0 , v , ; , . 8 . ? Z ?Z Z _ J. 9 1 e ,
3、1999,7( 2):11null1.2 , = Y , x , . , SnO2 8 . Z J. , 0 / ,2005, (04) :145null149.67第2期null null null null null null null null null null 席彩红,等:二氧化锡气体传感器敏感机理的研究null null null null null null null null null null null 3 1 . 8 . ! / ZJ. . / .2005,24( 9) :4null7. 4 f , E S .= ! Z J . k 4 , 2003, 25(4): 203
4、null206. 5 S q . , # ! J. 8S ,2004, 16(3):92null94. 6 u , r , * * , .= . K T J . W , 2002,(8)7:1null6. 7 Rajeev K Srivastava. Sensing mechanism in tin oxidenullbased thicknullfilm gas sensors J . Sensorsand ActuatorsB, 1994, 21:213null218.8 Schierbaum K D, Kirner U K, Geigerand W, et al.Schottkynull
5、barrier and conductivity gas sensors based upnullon Pd/ SnO2 and Pt/TiO2 J . Sensors and Actuators B,1991, 87null94.9 m . 8 V M. q : v ,1982. 10 Morrison S R. Theory of adsorption, in SurfacePhysicsof Phosphors and Semiconductors edited by C.G.Scottand C.E.Reed J . Academic Press,1975, 221:7.Study o
6、n Gasnullsensing Mechanism of SnO2 SensorX I Cainullhong , null GA O X iaonullp ing , null L I U Guonullhan(Institute of Sensor Technology, Gansu Academy of Science, 730000, Lanzhou, Gansu, PRC)Abstract:The Schottkynullbarrier model explains the behaviour of the sensor conductance as a function ofth
7、e concertration of test gas and the operating temperature. To relate the conductance with the concertranulltion of the gas, the Freundlich adsorption isotherm for gas on a solid surface is used. The state of surfaceinfluencing on SnO2 conductance is described accurately. The relation between resist
8、and concentration issimulated by Mathematical software. The difference in emulation and tested result is analyzed. The testeddatas show a good fit with physical model. Considering environmental element the simulated data is denullclined more rapidly than thetested data at low concentration.So themod
9、el is amended by decreaseing charnullacteristic parameter d, and B!.Key words: SnO2 sensor; the Gasnullsensing mechanism; Freundlich adsorption isotherm; sensitivity68null null null null null null null null null null null null null 曲阜师范大学学报(自然科学版) null null null null null null null null null null null null null null 2008年
