1、EPI 技术标准： EPI Specification:项目 Item 描述 Description单位 Unit衬底 Substrate外延层 Epitaxial Layer 备注 remarks制造方式 Fabrication Methods生长方式 Grown method CZ 电阻率类型 Resistivity Type N+ N-掺杂 Dopant 见备注 6 see remarks 6磷(P) 晶向 Crystal Orientation (100)0.5 电特性 Electrical Characteristics 电阻率 Resistivity cm 见备注 see rema
2、rks 见备注 see remarks径向偏离度 Degree of radial deviation% 5 5 边缘 10mm 见备注 1Margine 10mmSee remarks 1中心点偏离度 Central point of deviation% 2.5 寿命 Lifetime usec 物理尺寸Physical Dimensions直径 Diameter mm 1500.5 主基准面长度 Primary datum length mm 57.52.5 主基准面定向 Primary datum orientation1副基准面位置 / 厚度 Thickness um 见备注 see
3、 remarks 见备注 see remarks翘曲度/弯度 Warp/Bow um 35 50 总厚度变化 Total thickness variation um 15 18 全貌平整度 Global flatness um 5 6 局部平整度 Local flatness um 1.5(10*10) 2(15*15) 平行度 parallelism um 10 15 倒角、边缘轮廓 Edge rounding, edgesT/3 SEMI M1 坐标 Coordinate Cy um 208 Cx um 50 晶体缺陷 Crystal Defects氧化层错缺陷 Oxide Induce
4、d Stacking Faults个/cm2 100 200 腐蚀坑 Etch pit 个/cm2 - 25 备注 2 See remarks 2堆剁层错 Stacking fault 个/cm2 无 None 5 备注 2 See remarks 2线缺陷 Linear defects 个，mm 无 None 5个 a: Outer packing: state date of manufacture, batch number,quantity,specification, modle and producer; b：内包装：真空包装或排空后充氩气包装， 25片/盒, 盒标签标明类型/掺杂
5、、定位、电阻率、数量、规格/修正b: Inner packing: vacuum packing or argon packing after empty the air within, 25pcs per box, each box labeled type/dopant, orientation, resistivity, quantity, specification盒标签 Box label a:规格/修正,b:类型/掺杂,c:晶向,d:电阻率,e: 数量 f: 备注(随意) a: specification/modification, b: type/dopant, c: orien
6、tation, d: resistivity, e: quantity f: remarks (optional)存储条件 Storage condition 室温, 干净, 密封, 干燥 room temperature, cleanness, airproof, dryness安全要求 Safety requirements 易碎品,防碰撞 Fragile, keep out of touch分析证书 Analysis certificates备注中有 *的参数需要在质量保证书注明 the specification with the mark “*” in the remarks sho
7、uld state clearly in the Certificate of Quality.备注 Remark其它未列参数均按 SEMI标准执行 Other specifications unstated here are according to SEMI Standards 备注：1. 公式：（最大值最小值）/（最大值+最小值）*100，最大值和最小值都要求在规范值以内。2. 腐蚀坑/堆剁层错：优先腐蚀之后，在显微镜下的可见缺陷。* 在没有腐蚀之前缺陷能通过聚光灯或者荧光灯看到，并且能够知道点缺陷的个数。3. 滑移线1）滑移线的个数要小于5 条，同时总的长度硅片直径的1/2 ；除了硅片
8、边缘暴露的3mm 的区域，这个要求对整个硅片表面都有效。2）滑移线中心没有达到R/2。4 突起、尖峰和凹坑备注：1. 公式：（最大值最小值）/（最大值+最小值）*100，最大值和最小值都要求在规范值以内。2. 腐蚀坑/堆剁层错： 优先腐蚀之后，在显微镜下的可见缺陷。* 在没有腐蚀之前缺陷能通过聚光灯或者荧光灯看到，并且能够知道点缺陷的个数。3. 滑移线1）滑移线的个数要小于5 条，同时总的长度硅片直径的1/2 ；除了硅片边缘暴露的3mm 的区域，这个要求对整个硅片表面都有效。2）滑移线中心没有达到R/2。4 突起、尖峰和凹坑Remarks:1. Formula: (Maximum Value-
9、 Minimum Value) / (Maximum Value+ Minimum Value)*100, both the maximum value and minimum value should be within the specification limit.2. Etch pit / stacking fault: After the first corrosion, defects can be seen under the microscope.* Before the corrosion, the defects can be seen through the fluore
10、scent light or spotlight, and the number of the defect points is also knowable.3. the slip lines1) the total number of the slip lines should be less than 5, meanwhile the total length of the lines should be equal or less than 1/2 of the Silicon wafer diameter;Except for the 3mm exposure areas of the
11、 silicon wafer boundaries, this requirement is effective to the whole silicon wafer surface.2) The slip line center doesnt reach R/24 Bulges, aiguille and dimples缺陷种类 Defect types外延层厚度（um） Epitaxial Layer thickness (um)100 总的点缺陷 Total point defects 12 14 17 17 最大的点缺陷 The largest point defects 5 7 9
12、11 混入可移出痕迹 0 2 3 4 外延片型号 Epitaxial Model衬底厚度（um）Substrate thickness (um)衬底掺杂Substrate dopant衬底电阻率（cm）Substrate resistivity （cm）外延层厚度（um ）Epitaxial thickness (um)外延层电阻率（cm） Epitaxial resistivity （cm）EWN05018-6P 62515 锑(Sb) 0.0070.02 18.5 0.93 5.0 0.38 EWN12036-6P 62515 锑(Sb) 0.0070.02 36.0 1.80 12.00
13、.90 EWN15046-6P-1 62515 锑(Sb) 0.0070.02 46.0 2.30 15.01.20 EWN15046-6P-2 62515 锑(Sb) 0.0070.02 46.0 2.30 15.0+1.2/-0.3 EWN18054-6P-1 62515 锑(Sb) 0.0070.02 54.0 2.70 18.01.40 EWN30083-6P 62515 锑(Sb) 0.0070.02 83.0 4.15 30.02.20 EWN13044-6P 62515 锑(Sb) 0.0070.02 44.0 2.20 13.51.00 EWN17052-6P 62515 锑(
14、Sb) 0.0070.02 52.0 2.60 17.01.36 EWN35085-6P 62515 砷(As) 0.0020.007 85.0 4.25 35.02.50 EWN15054-6P 62515 锑(Sb) 0.0070.02 54.0 2.70 15.01.20 EWN20052-6P 62515 锑(Sb) 0.0070.02 52.0 2.60 20.01.6 EWN27080-6P 62515 锑(Sb) 0.0070.02 80.06.0 27.02.4 EWN27074-6P 62515 锑(Sb) 0.0070.02 74.06.0 27.02.4 EWN30083
15、-6P 62515 锑(Sb) 0.0070.02 83.06.0 30.02.4 EWN30078-6P 62515 锑(Sb) 0.0070.02 78.06.0 30.02.4 EWN04017-6P 62515 锑(Sb) 0.0070.02 17.01.4 4.50.36EWN04019-6P 62515 锑(Sb) 0.0070.02 19.01.5 3.80.3 *总的点缺陷：使用200K 勒克斯(lux) 亮度的聚光灯或者同等检测容量的检测设备，可见缺陷的数量（包括没有进行优先腐蚀的可见堆剁层错）。*最大的点缺陷：使用 6K 勒克斯(lux) 亮度的荧光灯或者同等检测容量的检测
16、设可见缺陷数。*混入可移出痕迹：凸起的缺陷可以被移除并且数量应该是有限的。-以上的每个缺陷的标准是包括了放宽之后的标准。-考虑到检测方法的不同，如果超出标准则应该供应商和我公司进行沟通。-除了硅片边缘暴露的3mm 的区域，这个要求对整个硅片表面都有效。-硅片边缘轮廓任何部位不允许有锐利点或突起物。5 其他的要求：运输包装25 片/盒，在随批的检验报告单中提供该批随机抽样实际测试的测试值（外延层电阻率和厚度的片内5 点值）。6 衬底掺杂、衬底电阻率、外延厚度和外延电阻率要求如下表 1：* Total point defects: Using 200K(lux ) of spotlight or
17、equality capacity testing equipment to detect the number of the defects ( including all the visible stacking faults before the first corrosion).* The largest point defects: Using 6K(lux) of the fluorescent light or equality capacity testing equipment to see the visible defects.*混入可移出痕迹: the raised d
18、efects can be removed and the quantity of the raised defects should be limited.- -以上的每个缺陷的标准是包括了放宽之后的标准。-Considering the different testing methods, the supplier should contact with us when specification is Beyond the standard specification.-Except for the 3mm exposure areas of the silicon wafer boun
19、daries, this requirement is effective for the whole silicon wafer surface.-Any sharp points or bulges are not allowed on any part of the silicon wafer margins.5. Other requirements: shipping packing 25pcs per box, the test value of each batch from the random sampling testing should be provided in the inspection report. 6. Substrate dopant, substrate resistivity, Epitaxial resistivity requirements see table 1:
