1、2Wave mechanics波动力学Carriers载体Photon光子Electrons电子的Work function功函数Holes孔Wave-particle duality principle波粒二象性原则Effective mass有效质量Probability density function概率密度函数Insulator绝缘子Pauli exclusion principle泡利不相容原理Semiconductor半导体Allowed energy band允许的能带Direct bandgap semiconductor直接带隙半导体Forbidden energy ban
2、d禁带Indirect bandgap semiconductor间接带隙半导体Valence band价带Fermi-Dirac distribution function费米-狄拉克分布函数Conduction band导带Fermi energy费米能级3Density of electrons(holes)电子密度（孔）Complete ionization完全电离Intrinsic carrier concentration本征载流子浓度Compensated semiconductor补偿半导体Intrinsic Fermi level内在的费米能级Charge neutralit
3、y电荷中和Donor impurity施主杂质Impurity() diffusion coefficientimpurity()扩散系数Acceptor impurity受主杂质Nondegenerate semiconductor非退化半导体Extrinsic semiconductor本征半导体Degenerate semiconductor退化半导体Intrinsic semiconductor本征半导体Majority carriers多数载流子Minority carriers少数载流子Electron(Hole) concentration电子（空穴）的浓度4Transport运
4、输Diffusion扩散Drift (current)漂移（电流）Diffusion current扩散电流Hole(Electron) mobility孔（电子）迁移Carrier lifetime载流子寿命Hole(Electron) drift current density孔（电子）漂移电流密度(In)Direct bandgap（在）的直接带隙Scattering effects散射的影响Electron diffusion coefficient电子扩散系数Lattice scattering晶格散射Hole diffusion coefficient孔扩散系数Ionized im
5、purity scattering电离杂质散射Einstein relation爱因斯坦关系Conductivity导电性Carrier generation载流子的产生Resistivity电阻率Carrier recombination载流子复合Drift velocity saturation饱和漂移速度Excess carrier过剩载流子Hall voltage(effect)霍尔电压（效果）6Channel region沟道区Principle of operation操作原理Threshold voltage阈值电压MOS capacitorMOS电容器Energy-band d
6、iagram能带图Charge distribution电荷分布Accumulation layer积累层Induced depletion region诱导的耗尽区Inversion layer逆温层Inversion charge density反转电荷密度Work function differences工作性能差异Polysilicon gate多晶硅栅Oxide charge氧化层电荷Flat-Band voltage平带电压Enhancement-mode device增强模式器件Depletion-mode device耗尽型器件Strong inversion较强的逆温Weak
7、 inversion弱反转Soure (drain) terminals源（漏）端子Long-channel device长通道设备(non)saturation region（非）饱和区Conduction parameter传导参数Cutoff frequency截止频率Invertor逆变器Substrate bias effects衬底偏压的影响Transconductance跨导7Constant-Field Scaling恒定电场标度Channel length scaling通道长度尺度Subthreshold current亚阈值电流Subthreshold conductio
8、n亚阈值传导Channel Length Modulation沟道长度调制Short channel effect短沟道效应Surface scattering effect表面散射的影响Effective surface electric field有效的表面电场Velocity saturation速度饱和Cutoff frequency截止频率Charge sharing电荷共享Substrate bias effects衬底偏压的影响Oxide breakdown氧化层击穿Hot electron (effects)热电子（作用）Threshold adjustment阈值调整Chan
9、nel resistance通道电阻8Nonequilibrium excess carriers非平衡载流子Generation (rate)代（率）Recombination (rate)重组（率）Ambipolar transport双极性传输Continuity equation连续性方程Low injection低注射Minority-carrier diffusion length少数载流子的扩散长度Quasi-Fermi energy level的准费米能级Excess carrier lifetime过量的载流子寿命Surface state表面状态9Schottky diod
10、es肖特基二极管Boundary conditions边界条件Forward bias正向偏置Reverse bias反向偏压Carrier injection载流子注入Reverse-saturation current density反向饱和电流密度Diffusion resistance扩散阻力Diffusion capacitance扩散电容Junction breakdown结击穿Zener breakdown齐纳击穿Avalanche breakdown雪崩击穿Critical electric field临界电场Charge storage电荷存储Storage time贮存时间
11、10Bipolar transistor双极型晶体管Emitter, Collector, Base (current)发射极，集电极，基（电流）Common-base(emitter) current gain共基极（发射极）的电流增益Forward-active(Cutoff, Saturation, Inverse-active) mode提出了积极的（截止，饱和，反活性）模式Emitter injection efficiency发射极注入效率Base transport factor基区输运系数Base width modulation基部宽调制Early effect(voltage)早期的影响（电压）High injection高的注射Emitter bandgap narrowing发射带隙变窄Current crowding电流拥挤Cutoff frequency截止频率
