1、 Silicon N-Channel Power MOSFET CS4N65A3HDWUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2011RHuajing Discrete DevicesGeneral Description： CS4N65A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, i
2、mprove switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： z Fast Switching z ESD Improved Capability z Low
3、Gate Charge (Typical Data: 13nC) z Low Reverse transfer capacitances(Typical: 4.2pF) z 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（ Tc= 25 unless otherwise specified） ： Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 650 V Co
4、ntinuous Drain Current 4 A IDContinuous Drain Current TC= 100 C 2.9 A IDMa1Pulsed Drain Current 16 A VGSGate-to-Source Voltage 20 V EASa2Single Pulse Avalanche Energy 200 mJ EARa1Avalanche Energy ,Repetitive 30 mJ IARa1Avalanche Current 2.5 A dv/dta3Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipati
5、on 75 W PD Derating Factor above 25C 0.60 W/ VESD(G-S)Gate source ESD (HBM-C= 100pF, R=1.5k) 3000 V TJ， TstgOperating Junction and Storage Temperature Range 150， 55 to 150 TLMaximumTemperature for Soldering 300 VDSS650 V ID4 A PD(TC=25 ) 75 W RDS(ON)Typ2.2 WUXI CHINA RESOURCES HUAJING MICROELECTRONI
6、CS CO., LTD. Page 2 of 10 2011RCS4N65A3HD Huajing Discrete DevicesElectrical Characteristics（ Tc= 25 unless otherwise specified） ： OFF Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max.Units VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250A 650 - - V BVDSS/ TJBvdss Temperatu
7、re Coefficient ID=250uA,Reference25 - 0.67 - V/VDS=650V, VGS= 0V, Ta= 25 - - 25 A IDSSDrain to Source Leakage Current VDS=520V, VGS= 0V, Ta= 25 - - 250 A IGSS(F) Gate to Source Forward Leakage VGS =+20V - - 10 A IGSS(R)Gate to Source Reverse Leakage VGS=-20V - - -10 A ON Characteristics Rating Symbo
8、l Parameter Test Conditions Min. Typ. Max.UnitsRDS(ON)Drain-to-Source On-Resistance VGS=10V,ID=2A - 2.2 2.5 VGS(TH)Gate Threshold Voltage VDS= VGS, ID= 250A 2.0 4.0 V Pulse width tp 380s, 2% Dynamic Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max.UnitsgfsForward Transconductanc
9、e VDS=15V, ID=2A 3.5 - S CissInput Capacitance - 570 Coss Output Capacitance - 55 Crss Reverse Transfer Capacitance VGS = 0V VDS= 25V f = 1.0MHz - 4.2 pF Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max.Unitstd(ON)Turn-on Delay Time - 9.5 - tr Rise Time - 4.9
10、 - td(OFF)Turn-Off Delay Time - 28.5 - tf Fall Time ID=4A VDD= 325V RG=25 - 9 - ns QgTotal Gate Charge - 13 Qgs Gate to Source Charge - 3 QgdGate to Drain (“Miller”)Charge ID =4A VDD =325V VGS= 10V - 5 nC WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2011 RHuajing Discrete Dev
11、icesCS4N65A3HD Source-Drain Diode Characteristics Rating Symbol Parameter Test ConditionsMin. Typ. Max. UnitsIS Continuous Source Current (Body Diode) - - 4 A ISMMaximum Pulsed Current (Body Diode) - - 16 A VSDDiode Forward Voltage IS=4.0A,VGS=0V - - 1.5 V trr Reverse Recovery Time - 503 - ns Qrr Re
12、verse Recovery Charge IS=4.0A,Tj= 25 C dIF/dt=100A/us, VGS=0V - 2.4 - C Pulse width tp 380s, 2% Symbol Parameter Typ. UnitsRJCJunction-to-Case 1.67 /WRJA Junction-to-Ambient 62.5 /WGate-source Zener diode Rating Symbol Parameter Test ConditionsMin. Typ. Max. UnitsVGSOGate-source breakdown voltage IG
13、S= 1mA(Open Drain) 20 V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is ap
14、propriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. a1： Repetitive rating; pulse width limited by maximum junction temperature a2： L=10mH, ID=6.3A, Start TJ=25 a3： ISD =4A,di/dt
15、 100A/us,VDD BVDS, Start TJ=25 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 10 2011 RHuajing Discrete DevicesCS4N65A3HD Characteristics Curve： TC , Case Temperature , C75PD,Power Dissipation ，Watts25050 100 125 150010203040506070800.0010.010.110.00001 0.0001 0.001 0.01 0.1 1Rect
16、angular Pulse Duration,SecondsThermal Impedance, Normalized01.534.560 5 10 15 20 25Vds , Drain-to-Source Voltage , VoltsId, Drain Current , AmpsFigure 2 Maximun Power Dissipation vs Case Temperature Figure 5 Maximum Effective Thermal Impendance , Junction to Case Figure 4 Typical Output Characterist
17、icsFigure 3 Maximum Continuous Drain Current vs Case Temperature Figure 1 Maximun Forward Bias Safe Operating Area 100 s 1ms 10ms 100msOPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON)TJ=MAX RATED TC=25 Single Pulse VGS=15V VGS=5.5VVGS=6VVGS=6.5VVGS=7VPDMt2t1NOTES： DUTY FACTOR ： D=t1/ t2 PEAK Tj=PDM*
18、ZthJC*RthJC+TC50% 20% 10% 5% Single pulse 2%1% PULSE DURATION=10 s DUTY FACTOR=0.5%MAXTc = 25 DC VGS=4.5V Vds , Drain-to-Source Voltage , Volts1010.01Id , Drain Current ,Amps0.1110 100 1000100TC , Case Temperature , C50Id ,Drain Current , Amps0123450 25 15010075 1256WUXI CHINA RESOURCES HUAJING MICR
19、OELECTRONICS CO., LTD. Page 5 of 10 2011 RHuajing Discrete DevicesCS4N65A3HD Idm , Peak Current , Amps1.00E-051101001.00E-04Pulse Width , Seconds1.00E-03 1.00E-02，t 1.00E-01 1.00E+00 1.00E+010123456468101214Vgs , Gate to Source Voltage ， VoltsRds(on),Drainto SourceONResistance , Ohms0.50.7511.251.51
20、.7522.252.5-50 0 50 100 150Tj, Junction temperature , CRds(on), Drain to Source ON Resistance,NomalizedId , Drain Current , AmpsResistance, OhmsRds(on),Drain toSourceON012 3 41232.51.501.534.567.5923456Vgs , Gate to Source Voltage , VoltsId , DrainCurrent ,AmpsFigure 6 Maximun Peak Current Capabilit
21、yFigure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current Figure 7 Typical Transfer Characteristics Figure 10 Typical Drian to Source on Resistance vs Junction TemperatureFigure 9 Typical Drain to Source ON Resistance vs Drain Current TRANSCONDUCTANCE MAY LIMITCURRENT IN THIS
22、 REGION FOR TEMPERATURES ABOVE 25 DERATE PEAK CURRENT AS FOLLOWS: =12515025CTII-55 +25 +150 ID= 4A ID= 2A ID= 1A VGS=20V PULSE DURATION = 10 s DUTY FACTOR = 0.5%MAXTc =25 PULSE DURATION = 10 s DUTY CYCLE = 0.5%MAX VDS=30V PULSE DURATION = 10 s DUTY CYCLE= 0.5%MAX Tc =25 PULSE DURATION = 10 s DUTY CY
23、CLE= 0.5%MAX VGS=10V ID=2A WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 10 2011 RHuajing Discrete DevicesCS4N65A3HD 1101001000100000.1 1 10 100Vds , Drain - Source Voltage , VoltsCapacitance , pFtav,Time in Avalanche,Seconds1.00E-030.11.00E-06 1.00E-05 1.00E-04Id , Drain Current
24、 , Amps1101001.00E-011.00E-02 1.00E+000123456780 0.2 0.4 0.6 0.8 1 1.2Vsd , Source - Drain Voltage , VoltsIsd, Reverse Drain Current , Amps0246810120 2 4 6 8 10 12 14 16 18 20Qg , Total Gate Charge , nCVgs, Gate toSource Voltage ,Volts0.90.9511.051.1-55 -30 -5 20 45 70 95 120 145 170Tj, Junction tem
25、perature , CBvdss,Drain to SourceBreakdown Voltage, Normalized0.650.70.750.80.850.90.9511.051.11.15-75 -50 -25 0 25 50 75 100 125 150 175Tj, Junction temperature , CVgs(th),Threshold Voltage, NomalizedFigure 13 Typical Capacitance vs Drain to Source Voltage Figure 16 Unclamped Inductive Switching Ca
26、pability Figure 15 Typical Body Diode Transfer Characteristics Figure 14 Typical Gate Charge vs Gate to Source Voltage Ciss Coss Crss VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd VDS=180VVDS=360VVDS=480V+150 +25 -55 STARTING Tj = 25 STARTING Tj = 150 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R
27、0: tAV=(L/R) InIAS*R/ (1.38VDSS-VDD)+1 R equals total Series resistance of Drain circuit Figure 11 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Breakdown Voltage vs Junction TemperatureVGS=0V ID=250 AVGS=0V ID=250 A ID=2AWUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. P
28、age 7 of 10 2011 RHuajing Discrete DevicesCS4N65A3HD TestCircuitandWaveformWUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 10 2011 RHuajing Discrete DevicesCS4N65A3HD WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 10 2011 RHuajing Discrete DevicesCS4N65A3HD Packa
29、ge Information： 规范 (mm) 项 目 MIN MAX A 6.40 6.80 B 5.80 6.20 C 2.20 2.40 D 0.40 0.60 E 0.50 0.70 F 0.40 0.60 G 0.70 0.90 H 1.60 2.00 L 7.80 8.20 M 5.10 5.50 N 2.09 2.49 TO-251 Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 10 of 10 2011RHuajing Discrete DevicesCS4N65A3HD The nam
30、e and content of poisonous and harmful material in products Hazardous Substance Parts Name Pb Hg Cd Cr(VI) PBB PBDE Limit 0.1% 0.1% 0.01% 0.1% 0.1% 0.1% Lead Frame Molding Compound Chip Wire Bonding Solder Note ： means the hazardous material is under the criterion of SJ/T11363-2006. ： means the haza
31、rdous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroups RoHS. Warnings 1. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which
32、 may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the stati
33、c electricity, it is necessory to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail： 214061 http:/www. Tel: 0510-85807228 Fax: 0510-85800864 Marketing Part： Post： 214061 Tel / Fax： 0510-85807228-3663/5508 E-mail： 0510-85800360（ Fax） Application and Service： Post： 214061 Tel / Fax： 0510-85807228-3399 / 2227 E-mail：
