1、 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPS2907A TRANSISTOR (PNP) FEATURES Complementary NPN Type available (MPS2222A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Par Value Unit V CBOCollector-Base Voltage -60 V V CEOCollector-Emitter Volta
2、ge -60 V V EBOEmitter-Base Voltage -5 V I CCollector Current -Continuous -0.6 A P CCollector Power Dissipation 0.625 W T JJunction Temperature 150 T stgStorage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collecto
3、r-base breakdown voltage V (BR)CBOI C =-10 A,I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEOI C =-10mA,I B =0 -60 V Emitter-base breakdown voltage V (BR)EBOI E =-10 A,I C =0 -5 V Collector cut-off current I CBOV CB =-50V,I E =0 -10 n A Collector cut-off current I CEXV CE =-30V,V EB(off) =
4、-0.5V -50 nA Emitter cut-off current I EBOV EB =-3V,I C =0 -10 nA h FE(1)V CE =-10V,I C =-0.1mA 78 h FE(2)V CE =-10V,I C =-150mA 100 300 DC current gain h FE(3)V CE =-10V,I C =-500mA 52 V CE(sat)I C =-150mA,I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat)I C =-500mA,I B =-50mA -0.67
5、V V BE(sat)I C =-150mA,I B =-15mA -1 V Base-emitter saturation voltage V BE(sat)I C =-500mA,I B =-50mA -1.2 V Transition frequency f TV CE =-20V,I C =-50mA,f=100MHz 200 MHz Delay time t d10 ns Rise time t rIB1= -IB2=-15mAVCC=-30V,Ic=-150mA,25 ns Storage time t S225 ns Fall time t fV CC =-6V,Ic=-150m
6、A, I B1 =-I B2 =-15mA 60 ns CLASSIFIC ATION OF h FE(2)Rank L H Range 100-200 200-300 TO-92 1. EMITTER 2. BASE 3. COLLECTOR B,Jul,2012 【南京南山半导体有限公司 长电三极管选型资料 】-10 -100 0 100 200 300 400 500 -0.1 -1 -10 -100 10 100 1000 0 25 50 75 100 125 150 0 125 250 375 500 625 750 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -0
7、.1 -1 -10 -100 -0.1 -1 -10 1 10 100 -1 -10 -100 -0.01 -0.1 -1 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -0 -10 -20 -30 -40 -50 -0 -40 -80 -120 -160 -200 COMMON EMITTER V CE =-20V T a =25 h FE f T -4TRANSITION FREQUENCY f T(MHz) COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =-10V MPS2907A Typical Characterisi
8、tics I C -600 I C T a =25 T a =100 DC CURRENT GAIN h FE COLLECTOR CURRENT I C(mA) P C T aCOLLECTOR POWER DISSIPATIONP C(mW) AMBIENT TEMPERATURE T a( ) COMMON EMITTER V CE =-10V -600 T a =100 T a =25 COLLECTOR CURRENT I C(mA) BASE-EMMITER VOLTAGE V BE(V) f=1MHz I E =0/I C =0 T a =25 -20 V CB / V EB C
9、 ob / C ib C ob C ibCAPACITANCE C (pF) REVERSE VOLTAGE V (V) V BE I C -600 =10 T a =100 T a =25 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C(mA) -600 =10 I C V BEsat T a =100 T a =25 BASE-EMITTER SATURATION VOLTAGE V BEsat(V) COLLECTOR CURRENT I C(mA) COMMON EMI
10、TTER T a =25 -1mA -900uA -800uA -700uA -600uA -500uA -400uA -300uA -200uA I B =-100uA Static CharacteristicCOLLECTOR CURRENT I C(mA) COLLECTOR-EMITTER VOLTAGE V CE(V) B,Jul,201 2Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.0
11、20 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP. 0.050 TYP. 【南京南山半导体有限公司 长电三极管选型资料 】 【南京南山半导体有限公司 长电三极管选型资料 】 【南京南山半导
12、体有限公司 长电三极管选型资料 】 【南京南山半导体有限公司 长电三极管选型资料 】Item Symbol Value & Tolerance Body width A1 4.5 0.2 Body height A 4.5 0.2 Body thickness T 3.5 0.2 Lead wire diameter d 0.46 0.05 Pitch of component P 12.7 0.3 Feed hole pitch P0 12.7 0.2 Hole center to component center P2 6.35 0.3 Lead to lead distance F1,F
13、2 2.5 0.3 Component alignment, F-R h 0 1.0 Type width W 18.0 + 1.0, - 0.5 Hole down tape width W0 6.0 0.5 Hole position W1 9.0 0.5 Hole down tape position W2 1.0 MAX. Height of component from tape center H 19.0 1.0 Lead wire clinch height H0 16.0 0.5 Lead wire(tape portion) L1 2.5 MIN. Feed hole dia
14、meter D0 4.0 0.2 Taped Lead Thickness t1 0.4 0.05 Carrier Tape Thickness t2 0.2 0.05 Position of hole P1 3.85 0.3 Component alignment P 0 1.0Unit : mm 【南京南山半导体有限公司 长电三极管选型资料 】 Sponge strip 2000 pcs Sponge strip The top gasket Label on the Inner Box Plastic bag Label on the Outer Box Inner Box: 333
15、mm 162mm 43mm Outer Box: 350 mm 340mm 250mm QA Label Seal the box with the tape Stamp “EMPTY” on the empty box 【南京南山半导体有限公司 长电三极管选型资料 】 Inner Box: 240 mm 165mm mm Label on the Inner Box Outer Box: 525 mm 360mm 262mm Label on the Outer Box QA Label Seal the box with the tape Stamp “EMPTY” on the empty box 【南京南山半导体有限公司 长电三极管选型资料 】