1、 4 4- 1 PIDA Photonics Industry & Technology Development Association 4 4-1 (Nippon Electric Glass) 120 1 2 30 GRIN (WDM) (Isolator) (Hitachi Chemical) 1 IC 4 4- 2 PIDA Photonics Industry & Technology Development Association 1.55 m 1.55 m 4 4 4- 3 PIDA Photonics Industry & Technology Development Asso
2、ciation4-2 Electronics 1.3 m (Dot) (MOCVD) 1 /2 (Antimony) MOCVD 1.29 m 1.3m 3 (Fujitsu) (Fujitsu Laboratories) Gbps G-PON 85 -40 (Burst) G-PON ITU-T G.984.2 Class B+ CMOS LSI 1,000 (System Margin) (Fujitsu) NEC LN 2007 6 NEC 8 4 4- 4 PIDA Photonics Industry & Technology Development Association XFP
3、40 10 Gbps 85 - 40C 2007 5 NEC AZNA AZNA NEC (PLC) NEC SFP SFF 6 2007 3 (Oki Electric Industry) XMD-MSA 10 Gbps -20 dB -27 dB 1 5,000 3 5,000 10 Gbps ROSA (Mitsubishi E lectric) XFP MSA 40 10 Gbps 17 5 30% 2.5 W 30% 10 10 Gbps IC PON IC 4 4- 5 PIDA Photonics Industry & Technology Development Association IC 10 Gbps PON PON (TDMA) (Timing) 4 4- 6 PIDA Photonics Industry & Technology Development Association4-3 4 4- 7 PIDA Photonics Industry & Technology Development Association (Mitsubishi Electric) BB84 Protocol 80 5
