1、Zhengmin Li Zhengmin Li Electron Electron BackScattered BackScattered Diffraction Diffraction ) ) EBSD EBSDZhengmin Li Zhengmin Li 1. 1. EBSD EBSD Zhengmin Li Zhengmin Li a a b b c c 90 90 a a b b c c 90 90 90 90 a a b b c c = = = = =90 =90 a a b b c c 90 90 a=b=c a=b=c = = = = 90 90 a=b a=b c c = =
2、 =90 =90 120 120 a a b b c c 90 90 Zhengmin Li Zhengmin Li EBSD EBSD EBSD EBSD Zhengmin Li Zhengmin Li 1972 1972 Venables Venables Harland Harland SEM SEM 30CM 30CM (EBSP) (EBSP) 20 20 80 80 Dingley Dingley Zhengmin Li Zhengmin Li 20 20 90 90 SEM SEM (Electron Back (Electron Back - - scattering Patt
3、erns scattering Patterns EBSP) EBSP) (Electron Backscatter (Electron Backscatter Diffraction Diffraction EBSD) EBSD) (Orientation Imaging (Orientation Imaging Microscopy Microscopy OIM) OIM) Zhengmin Li Zhengmin Li EBSD EBSD ( ( 8 8 / / ) ) ( ( 0.02 0.02 m m 0.5 0.5 ) ) Zhengmin Li Zhengmin Li 2. 2.
4、 EBSD EBSD EBSD EBSD SEM SEM ( ( ) ) Euler Euler ( ( 1 1 , , , , 2 2 ) ) Zhengmin Li Zhengmin LiZhengmin Li Zhengmin Li SEM SEM ( ( ) ) X X 2 2 o o Zhengmin Li Zhengmin Li ( ( ) ) Zhengmin Li Zhengmin Li , , , ( ) , , ( ) , , , sin 2d n =Zhengmin Li Zhengmin Li EBSD Geometry Zhengmin Li Zhengmin Li
5、Kikuchi line Kikuchi line Zhengmin Li Zhengmin Li A diffraction pattern from nickel collected at 20 kV acceleratin A diffraction pattern from nickel collected at 20 kV accelerating voltage g voltageZhengmin Li Zhengmin Li ABC ABC X X Y Y Z Z 3a 3a 2b 2b 6c 6c X X Y Y Z Z a a b b c c 3 3 2 2 6 6 2 2
6、3 3 1 1 231 231 Zhengmin Li Zhengmin Li uvw uvw AB AB O O OP, OP, 110 110 , , AB AB 110 110 OB OB 111 111 111 111 OC OC C C 100 100 100 100 OD OD 010,OA 010,OA 001 001 1 1- -6 6 100 100 , , Zhengmin Li Zhengmin Li hkl Zhengmin Li Zhengmin Li The nickel crystal unit cell superimposed on the diffracti
7、on pattern in the orientation which generates this pattern. The crystal planes are labelled which correspond to the (2-20) and (020) Kikuchi bands in the diffraction pattern.Zhengmin Li Zhengmin Li w 2l nl /d The (200) plane d The (200) plane d- -spacing is wider than the (2 spacing is wider than th
8、e (2- -20) plane so the 20) plane so the Kikuchi bands from (200) planes are narrower than those from (2 Kikuchi bands from (200) planes are narrower than those from (2- - 20) planes. 20) planes.Zhengmin Li Zhengmin Li The symmetry of the crystal is shown in the diffraction pattern. The symmetry of
9、the crystal is shown in the diffraction pattern. For example, For example, four fold symmetry is shown around the 001 direction by four s four fold symmetry is shown around the 001 direction by four symmetrically ymmetrically equivalent zone axes. equivalent zone axes. Zhengmin Li Zhengmin Li Zhengm
10、in Li Zhengmin Li (TEM) TEM SEM EBSD 50nm Si Zhengmin Li Zhengmin Li Zhengmin Li Zhengmin Li 3. 3. SEM EBSDEBSD 70 EBSD Zhengmin Li Zhengmin Li 2-2 EBSP EBSP 1. 2. 3. 4. ; 5. 1 Index x, y 1 2 MAD BC 1 2 3 4 5Zhengmin Li Zhengmin Li 70 70 CCD CCD SEM SEM Diagram of the principal components of an EBSD
11、 systemZhengmin Li Zhengmin Li Fig.2 A photograph taken inside an SEM chamber showing the typi Fig.2 A photograph taken inside an SEM chamber showing the typical cal experimental arrangement for EBSD experimental arrangement for EBSD a beam of electrons is directed at a beam of electrons is directed
12、 at a point of interest on a tilted a point of interest on a tilted crystalline crystalline sample in the SEM sample in the SEM Zhengmin Li Zhengmin LiZhengmin Li Zhengmin LiZhengmin Li Zhengmin LiZhengmin Li Zhengmin Li Monte Carlo simulation of electron trajectories in a Si targetZhengmin Li Zheng
13、min Li Background Background Original pattern Background subtraction Background division Zhengmin Li Zhengmin Li EBSD EBSD EBSD EBSD Euler Zhengmin Li Zhengmin Li Zhengmin Li Zhengmin Li 4. EBSD EBSD Zhengmin Li Zhengmin Li EBSD 10mm 1200 4000 Zhengmin Li Zhengmin LiZhengmin Li Zhengmin LiZhengmin Li Zhengmin Li 12 12 70 70 HClO HClO 4 4 :CH :CH 3 3 OH OH 20ml:80ml 20ml:80ml - -20 20
