1、High Sensitivity Standard g-line Positive-tone PhotoresistHigh Sensitivity & High Heat Stability g-line Positive-tone PhotoresistHigh Sensitivity & High Adhesion g/i Cross-over Positive-tone PhotoresistHigh Sensitivity & High Adhesion g/i Cross-over Positive-tone PhotoresistImage Reversal Pattern Po
2、si/Nega Convertible PhotoresistMediumHigh Resolution i-line Positive-tone PhotoresistThick-film High Resolution i-line Positive-tone Photoresist for High-dose Implantation ProcessKrF Excimer Laser Positive-tone Photoresist for Contact HoleKrF Excimer Laser Positive-tone Photoresist for Contace Hole
3、and TrenchUltra Thick Film High Sensitivity g-line Standard Positive-tone PhotoresistUltra Thick Film High Resolution i-line Standard Positive-tone Photoresist for Plating ProcessUltra Thick Film Positive-tone Photoresist for Fine-Pitch Plating ProcessTop Anti Reflective Coating for Ultra High Resol
4、ution PatterningNon PFOS and Non PFOA type Top Anti Reflective Coating MaterialsBottom Anti Reflective Coating for Ultra High Resolution PatterningResist Shrinking Material for Ultra High Resolution PatterningPositive-tone Photoresist for TAB manufacturing and Process on Flexible SubstratePositive-t
5、one Photoresist for Photo-mask & Stamper of Photo-media by Spin CoatingSpin Coating Positive-tone Photoresist for Flat Panel DisplayUltra High Sensitivity Spin Coating Positive-tone Photoresist for Flat Panel DisplaySpin Coat Positive-tone Photoresist for 5th Generation Flat Panel DisplaysSpin-less
6、Coat Positive-tone Photoresist for over 5th Generation Flat Panel DisplaysRoll Coat Positive-tone Photoresist For Flat Panel DisplayNegative-tone Resist for Cathode Separator on Organic EL DisplayDevelopers,and other ancillary chemicalsRemovers for Positive-Tone Photoresist and side-wall polymer高感光度
7、标准 G线正型光刻胶高感光度高耐热性 G线正型光刻胶高感光度高附着性 G线 I线通用正型光刻胶高感光度高附着性 G线 I线通用正型光刻胶应用于 Iift - off工艺图形反转正 /负可转换 I线光刻胶高感光度中解像度 I线正型光刻胶厚膜高感光度高解像度 I线正型光刻胶应用于通孔图形的 KrF正型光刻胶应用于沟槽及通孔图形的超高分辨率 KrF正型光刻胶超厚膜高感光度标准 G线正型光刻胶应用于电镀工艺的超厚膜，高分辨率 I线正型光刻胶应用于高精度电镀工艺的超厚膜正型光刻胶应用于超高分辨率图形加工的顶部防反射涂层Non PFOS和 Non PFOA的顶部防反射涂层应用于超高分辨率图形加工的底部防反
8、射涂层应用于超高分辨率图形加工的光刻胶收缩材料应用于 TAB制造和柔性衬底工艺的正型光刻胶应用于光罩制造及光媒介原盘制造的旋涂正型光刻胶应用于液晶面板制造的旋涂式正型 I线光刻胶应用于液晶面板制造的超高感光度，旋涂式正型光刻胶应用于第五代液晶面板制造的旋涂式正型光刻胶应用于第五代以上液晶面板制造的 Spin-less涂布正型光刻胶应用于液晶面板制造的辊式涂布正型光刻胶应用于有机电致发光显示器阴极隔离的负型光刻胶显影液及其他相关化学品剥离液AZ 1500系列AZ 6100系列AZ 3100系列AZ GXR600系列AZ 5200E系列AZ MIR700系列AZ MIR900系列AZ DX3200
9、P系列AZ DX5200P系列AZ P4000系列AZ 10XT系列AZ PLP系列AZ AQUATAR系列AQUATAR-系列AZ BARC材料AZ Relacs涂布材料AZ 8100系列AZ P1350系列AZ TFP300系列AZ TFP600系列AZ SFP系列AZ SR系列AZ RFP系列AZ CTP系列目 录G线 /I线 /G线 I线通用光刻胶系列DUV光刻胶系列厚膜光刻胶系列防反射涂层 /RELACS系列特殊用途光刻胶系列液晶显示器 /平板显示器用光刻胶系列辅助化学品系列56789101112131415161718192021222324252627282930产品取用时的注意
10、事项小心取用，远离热源，火星，火源。避免直接接触皮肤及眼睛，避免吸入蒸汽，建议穿戴合适的防护用品。请储存在原密封的存储容器中，并存放在干燥的暗室中。如果接触皮肤：用肥皂及清水清洗接触部位。如果接触眼睛：用清水冲洗至少 15分钟，并送医。如果被吸入：移至空气新鲜处。请确保在使用前阅读过物质安全资料表。取用时安全注意事项急救措施物质安全资料表First AidBe sure to review Material Safety Data Sheet(MSDS) for detailed information prior to use.Keep away from heat,sparks,and o
11、pen flame.Adequate ventilation should be provided in work areas.If skin contact:Wash affected areas with soap and water.If eye contact:Immediately rinse with water for longer than 15 minutes and seek medical attention.If inhaled:Move into fresh air.Avoid skin/eyes contact and breathing vapor during
12、the use.It is recommended to wear proper safety gears.Keep in a sealed original container and store in a dark cool place.Material Safety Data SheetSafety and Handling3Target Critical Dimension (m)Photospeed (mj/cm2) Photospeed (mj/cm2)Critical Dimension (m)A Z 光 刻 胶 蓝 图AZ DUV 光刻胶产品蓝图AZ G-线光刻胶产品蓝图 AZ
13、 I-线光刻胶产品蓝图4参考工艺条件特 征g/i/cross-overSAMPLE PROCESS CONDITIONSFEATURES1) Achievement for high sensitivity and high throughput2) Improvement for wet etching by high adhesion3) Trust on delivery reference at wide field and industryProduct NameViscosity 4.4mPa 20mPa 38mPa 90mPaAZ1500 Eth 86msec.Eop94msec
14、.(1.1xEth)耐热性 (Thermal Stability)1255.04.03.02.01.00.02,000 3,000 4,000 5,0003.5100806040201.0 2.0 3.01.5 2.5Film Thickness (m)Spin Speed(rpm)Spin Curve Dependency of Eth vs.Resist Thickness4.4cP 20cP 38cP 90cPFilm Thickness (m)Pattern Profiles1.0m L/S Pattern 1.5m L/S PatternFilm Thickness : 1.5m (
15、Photo,Left): 3.0m (Photo,Right)Substrate : Bare-si 4” waferPre-bake : 100 90sec.(DHP)Exposure : g-line stepper(NA=0.42)Developing : AZ 300MIF(2.38%) 23 60sec.Process ConditionEth (mj/cm2)为广泛应用于半导体制造领域而优化的高感光度 G线正型光刻胶1) 高感光度 ,高产出率2) 高附着性 ,特别为湿法刻蚀工艺改进3) 广泛应用于全球半导体行业前烘 ： 100 60秒 (DHP)曝光 ： G线步进式曝光机 /接触式
16、曝光机显影 ： AZ300MIF (2.38%) 23 60秒 Puddle清洗 ：去离子水 30秒后烘 ： 120 120秒 (DHP)剥离 ： AZ剥离液及 /或氧等离子体灰化产品特性 (PRODUCT PERFORMANCE)AZ 1500 系 列 光 刻 胶高感光度标准 G线正型光刻胶产品型号 (PRODUCT RANGE)5High Sensitivity Standard g-line Positive-tone PhotoresistHigh sensitivity broad-band,g-line positive-tone photoresist,optimized for
17、 wide production of semiconductorPre-bake : 100 60sec.(DHP)Exposure : g-line stepper and/or Contact AlignerDeveloping : AZ300MIF 23 60sec.PuddleRinse : DI-water 30sec.Post-bake : 120 120sec.(DHP)Stripping : AZ Remover and/or O2plasma-ashing参考工艺条件特 征g/i/cross-overSAMPLE PROCESS CONDITIONSFEATURES1) I
18、mprovement of dry etching process margin by high heat stability2) Achievement of high throughput by high sensitivity3) Wide viscosity variationProduct NameViscosityAZ611243mPaAZ612413mPa 69mPaAZ6130 Eth 86msec.Eop94msec.(1.1xEth)耐热性 (Thermal Stability)140解像度 (Resolution)Substrate :Bare-Si 4” waferFi
19、lm Thickness :1.3mPre-bake :100 90sec.(DHP)Exposure :g-line Stepper(NA=0.54) 110msec.Developing :AZ 300MIF Developer(2.38%) 23 60sec.Process Condition耐热性 (Thermal Stability)125135Spin CurveFilm Thickness (m)5,0007.06.05.04.03.02.01.00.01,000 2,000 3,000 4,000Spin Speed(rpm)6112 6124 61301) 通过提高光刻胶的热
20、稳定性，从而改善了干法刻蚀的工艺窗口2) 高感光度带来了高产出率3) 很宽的膜厚范围前烘 ： 100 60秒 (DHP)曝光 ： G线步进式曝光机 /接触式曝光机显影 ： AZ300MIF (2.38%) 23 60秒 Puddle清洗 ：去离子水 30秒后烘 ： 120 120秒 (DHP)剥离 ： AZ剥离液及 /或氧等离子体灰化产品型号 (PRODUCT PERFORMANCE)AZ 6100 系 列 光 刻 胶高感光度高热稳定性 G线正型光刻胶广泛应用于大规模集成电路的高感光度高热稳定性 G线正型光刻胶产品型号 (PRODUCT RANGE)6High Sensitivity & Hi
21、gh Heat Stability g-line Positive-tone PhotoresistHigh sensitivity & high heat stability g-line positive-tone photoresist for general purposesemi-critical processPre-bake : 100 60sec.(DHP)Exposure : g-line stepper and/or Contact AlignerDeveloping : AZ300MIF (2.38%) 23 60sec.PuddleRinse : DI-water 30
22、sec.Post-bake : 120 120sec.(DHP)Stripping : AZ Remover and/or O2plasma-ashing3.0m2.0m1.0m0.9m0.8m0.7m0.6m0.5mFilm Thickness : 1.1mExposure : g-line stepper(NA=0.54)Developing : AZ 300MIF(2.38%) 23 60sec.4.03.02.01.01,000 2,000 3,000 4,000 5,000125120135130耐热性 (Thermal Stability)Spin CurveFilm Thickn
23、ess (m)Spin Speed(rpm)42cP 20cPProduct NameViscosity 20mPa 42mPaAZ3100DOF特性 (DOF Property)g-line stepper NA=0.420.8 m L/S Patterng-line stepper NA=0.500.6 m L/S Patterni线露光时 (i-line stepper NA=0.50)Eth max.1.085m thicknessEth max.1.395m thicknessg线露光时 (g-line stepper NA=0.42)Eth min.1.140m thickness
24、Eth min.1.230m thicknessEop min.1.085m thicknessEop min.1.305m thickness100msec.90msec. 75msec.75msec.115msec.145msec.参考工艺条件特 征g/i/cross-overSAMPLE PROCESS CONDITIONSFEATURESG线 I线通用高感光度高附着性正型光刻胶，特别为 G线的关键层优化1) G线， I 线通用2) 通过提高光刻胶的热稳定性，从而改善了干法刻蚀的工艺窗口3) 通过提高光刻胶的附着性，从而改善了湿法刻蚀的工艺窗口前烘 ： 100 60秒 (DHP)曝光 ：
25、 G线 /I线步进式曝光机显影 ： AZ300MIF (2.38%) 23 60秒 Puddle清洗 ：去离子水 30秒后烘 ： 120 120秒 (DHP)剥离 ： AZ剥离液及 /或氧等离子体灰化曝光特性比较 (EXPOSURE COMPARISON)AZ 3100 系 列 光 刻 胶高感光度高附着性 G线 I线通用正型光刻胶产品型号 (PRODUCT RANGE)1) Rationalization of product range by exposure of g/i line Cross-over2) Improvement of dry etching process margin
26、 by high heat stability3) Improvement of wet etching process margin by high adhesionHigh Sensitivity & High Adhesion g/i Cross-over Positive-tone PhotoresistHigh sensitivity & high adhesion g/i cross-over positive-tone photoresist,optimized especially for critical-layer on g-linePre-bake : 100 60sec
27、.(DHP)Exposure : g/i-line stepper Developing : AZ300MIF 23 60sec.PuddleRinse : DI-water 30sec.Post-bake : 120 120sec.(DHP)Stripping : AZ Remover and/or O2plasma-ashing-1.0m-1.0m-0.5mBest Focus-0.5m-1.5m-0.6m+0.2mBest Focus-0.4m-0.8m-0.2m+0.4m+0.6m+0.8m7g-line stepper NA=0.500.6 m L/S Pattern耐热性 (The
28、rmal Stability)120130140No BakeSubstrate : Bare-Si Resist Film Thickness : 1.305m(g-line) 1.108m(i-line)Pre-bake : 90 60sec.(DHP)Exposure : g-line or i-line stepper (NA=0.54) PEB : 110 60sec.(DHP)Developing : AZ 300MIF Developer (2.38%) 23 60sec.(puddle)Post-bake : 120sec.Process Condition1.00m0.90m
29、0.80m0.75m0.70m0.65m0.60m0.55m0.50m-0.8m-0.6m-0.4m-0.2mBestfocus+0.2m+0.4m+0.6m+0.8mAZ GXR601(g-line) AZ GXR601(g-line)AZ GXR601(g-line)0.6m patternDOF特性(DOF Property)解像度(Resolution)Product NameEopAZ GXR-601100msec.(i-line)/180msec.(g-line) 140msec.(i-line)/220msec.(g-line)AZ GXR-602Product NameVisc
30、osity 12mPa 29mPaAZ GXR-601 AZ GXR-602Spin Curve4.03.53.02.52.01.51.00.50.01,000 2,000 3,000 4,0005,000Spin Speed(rpm)601 602参考工艺条件特 征g/i/cross-overSAMPLE PROCESS CONDITIONSFEATURES1) G线， I线通用2) 高感光度带来了高产出率3) 通过提高光刻胶的附着性和热稳定性，改善了刻蚀的工艺窗口前烘 ： 100 60秒 (DHP)曝光 ： G线 /I线步进式曝光机曝光后烘烤 ： 110 60秒 (DHP)显影 ： AZ3
31、00MIF (2.38%) 23 60秒 Puddle清洗 ：去离子水 30秒后烘 ： 120 120秒 (DHP)剥离 ： AZ剥离液及 /或氧等离子体灰化露光特性比较 (EXPOSURE COMPARISON)AZ GXR-600 系 列 光 刻 胶高感光度高附着性 G线 I线通用正型光刻胶AZ GXR600 系列是 G线 I线通用高感光度高附着性正型光刻胶，特别符合高产出率的需求产品型号 (PRODUCT RANGE)1) It is possible to be used with both g-line and i-line2) To achieve high throughput
32、by high sensitivity3) Improvement of etching process margin by high adhesion and high heat stabilityHigh Sensitivity & High Adhesion g/i Cross-over Positive-tone PhotoresistAZ GXR600 series is high sensitivity cross-over positivie type photoresist which corresponds to the demand of high throughputPr
33、e-bake : 100 60sec.(DHP)Exposure : g-line stepper and/or i-line stepperPEB : 110 60sec.(DHP)Developing : AZ300MIF 23 60sec.PuddleRinse : DI-water 30sec.Post-bake : 120 120sec.(DHP)Stripping : AZ Remover and/or O2plasma-ashing8Product NameViscosity 7mPa 25mPa 40mPa 85mPaAZ5214E AZ5218EAZ5206E AZ5200N
34、JLowHigh 22 11211st Exposure Reversal Bake Flood Exposure7.06.05.04.03.02.01.00.01,000 2,000 3,000 4,000 5,000Spin Speed (rpm)Film Thickness (m)5206E 5214E 5218E 5200NJAZ 5200NJ Pattern ProfilesSpin Curve参考工艺条件特 征g/i/cross-overSAMPLE PROCESS CONDITIONSFEATURES高解像度图形反转正 /负可改变型光刻胶，特别为 lift-off工艺优化1) 适
35、用于高分辨率工艺 (lift-off工艺 )2) 适用于正 /负图形3) 很宽的膜厚范围AZ 5200E 系 列 光 刻 胶应用于 Lift-off工艺图形 反转正 /负可转换型光刻胶产品型号 (PRODUCT RANGE)前烘 ： 100 60秒 (DHP)曝光 ： I线步进式曝光机 /接触式曝光机反转烘烤 ： 110125 90秒 (DHP):去离子水 30秒全面曝光 ： 310405nm(在曝光光源下全面照射 )显影 ： AZ300MIF (2.38%) 23 3060秒 Puddle： AZ Developer(1:1)23 60秒 Dipping： AZ400K(1:4)23 60秒
36、 Dipping清洗 ：去离子水 30秒后烘 ： 120 120秒 (DHP)剥离 ： AZ剥离液及 /或氧等离子体灰化工艺条件依赖性 (Process Dependency)1) Suitable for High resolution process(lift-off process)2) Available for positive/negative patterning3) Wide viscosity variationImage Reversal Pattern Posi/Nega Convertible PhotoresistImage reversal pattern posi
37、tive/negative-tone photoresist,optimized for lift-off processPre-bake : 100 60sec.(DHP)Exposure : i-line stepper and/or Contact AlignerReversal Bake : 110125 90sec.(DHP): DI-water 30sec.Flood Exposure : 310405nm(Whole face Irradiation at Exposure light source)Developing : AZ300MIF 23 3060sec.Puddle:
38、 AZ Developer(1:1) 23 60sec.Dipping: AZ 400K(1:4) 23 60sec.DippingRinse : DI-water 30sec.Post-bake : 120 120sec.(DHP)Stripping : AZ Remover and/or O2plasma-ashing189mJ/cm225.2mJ/cm231.5mJ/cm2115 120 125189mJ/cm2252mJ/cm2315mJ/cm210.0m L/S 5.0m L/S 3.0m L/S 2.0m L/S 1.5m L/SSubstrate : bare-Si Film T
39、hickness : 6mPre-bake : 100 90sec.(DHP)Exposure : PLA 501F (Soft Contact) Reversal Bake : 120 120sec.Flood Exposure : PLA 501F (Proximity)Developing : AZ 400K (1:4) 23 90sec.dip9Dependeney with lst Exposure timeDependeney with Reversal Bake TemperatureDependeney with Flood ExposureProduct NameEopAZ
40、MIR-701 AZ MIR-703Product NameViscosity 14mPa 14mPaAZ MIR-701 AZ MIR-703360msec. 200msec.5,0004.03.02.01.00.01,000 2,000 3,000 4,000Spin Speed(rpm)MIR900(46cP) MIR950(75cP) MIR701/703(14cP) MIR701(49cP)Spin Curve of MIR series (MIR-700 & MIR900/950)DOF特性 (DOF Property)解像度 (Resolution)+0.40m+0.20mBes
41、tfocus-0.20m-0.40m-0.60m-0.80m-1.00mSubstrate : Bare-Si Resist Film Thickness : 1.08mPre-bake : 90 60sec.Exposure : i-line stepper(NA=0.54) PEB : 110 60sec.Developing : AZ 300MIF(2.38%) 23 60sec.(puddle)Post-bake : 120sec.Process Condition参考工艺条件特 征g/i/cross-overSAMPLE PROCESS CONDITIONSFEATURES1) 高感
42、光度带来了高产出率2) 线条与通孔均可应用3) 推荐与 AZ的 ARC和 RELACS共同使用前烘 ： 90 60秒 (DHP)曝光 ： I线步进式曝光机曝光后烘烤 ： 110 60秒 (DHP)显影 ： AZ300MIF (2.38%) 23 60秒 Puddle清洗 ：去离子水 30秒剥离 ： AZ剥离液及 /或氧等离子体灰化制品感光度 (SENSITIVITY)AZ MIR-700 系 列 光 刻 胶中高解像度 I线正型光刻胶高感光度 I线正型光刻胶，符合 ULSI和 VLSI制造过程中高感光度高分辨率的要求产品型号 (PRODUCT RANGE)1) To achieve high t
43、hroughput by high sensitivity2) Available for line and hole3) Recommendation to use with our ARC&RELACSMediumHigh Resolution i-line Positive-tone PhotoresistAZ MIR700series are high sensitivity i-line positive-tone photoresist which correspond to demand of high sensitivity and high resolution in man
44、ufacturing ULSI and VLSIPre-bake : 90 60sec.(DHP)Exposure : i-line stepperPEB : 110 60sec.(DHP)Developing : AZ300MIF 23 60sec.PuddleRinse : DI-water 30sec.Stripping : AZ Remover and/or O2plasma-ashing0.40m0.36m0.34m0.30m0.30m0.38m+0.60m0.40m pattern 0.35m pattern10厚膜，高分辨率高感光度 I线正型光刻胶，适用于超高剂量离子注入工艺和厚
45、金属层蚀刻工艺1) 在超厚膜工艺上达成高分辨率和高感光度2) 高对准精度3) 在 8um厚度下可使用 2.38%TMAH显影液产品感光度 (SENSITIVITY)AZ MIR900 系 列 光 刻 胶厚膜高解像度高感光度 I线正型光刻胶产品型号 (PRODUCT RANGE)前烘 ： 90 90秒 (DHP)曝光 ： I线步进式曝光机曝光后烘烤 ： 110 30秒 (DHP)显影 ： AZ300MIF (2.38%) 23 90秒 Puddle清洗 ：去离子水 30秒后烘 ： 120 120秒 (DHP)剥离 ： AZ剥离液及 /或氧等离子体灰化Product NameViscosityAZ
46、 MIR-900 AZ MIR-950Product NameViscosity 46mPa 75mPaAZ MIR-900 AZ MIR-950340msec. 220msec.DOF特性 (DOF Property)解像度 (Resolution)Substrate : Bare-Si Resist Film Thickness : 4.0mPre-bake : 90 90sec.Exposure : i-line Stepper(NA=0.54) PEB : 110 30sec.Developing : AZ 300MIF(2.38%) 23 60sec.Post-bake : 120sec.Process Condition参考工艺条件特 征g/i/cross-overSAMPLE PROCESS CONDITIONSFEATURESThick-film High Resolutioni-line Positive-tone Photoresistfor High-dose Implantation ProcessThick-film,high resolutio
