1、WAFER MOUNT,WAFER SAW,DIE ATTACH,EPOXY CURE,WIRE BOND,Semiconductor Packaging Process,MODING,Integrated Circuit (IC),TRIM / FORM,WAFER,CONTENTS,A. PURPOSE B. PRINCIPLE C. PROCESS D. PACKAGE INTODUCE E. M/C BASIC DATA F. MATERIAL G. PARAMETER H. DEFECTS I. REFERENCE,A.PURPOSE,FORMING A STRONG AND REL
2、IABLE INTERTALLIC BOND BETWWEEN THE WIRE AND THE PAD , AS WELL AS BETWEEN THE WIRE AND THE LEAD,DICE,GOLD WIRE,LEADFRAME,A.PURPOSE,pad,lead,Gold wire,Wedge Bond ( 2nd Bond ),Ball Bond ( 1st Bond ),B.PRINCIPLE,HARD WELDING: PRESSURE AMPLIFY & FREQUENCY WELDING TIME WELDING TEMPATURETHERMOSONIC BONDIN
3、G: THERMAL COMPRESSURE ULTRASONIC ENERGY(1.2MHZ),B.PRINCIPLE,C. WIREBOND PROCESS,pad,lead,Free air ball is captured in the chamfer,GOLD BALL,Free air ball is captured in the chamfer,pad,lead,Free air ball is captured in the chamfer,pad,lead,Free air ball is captured in the chamfer,pad,lead,Free air
4、ball is captured in the chamfer,pad,lead,Formation of a first bond,pad,lead,Formation of a first bond,pad,lead,Formation of a first bond,pad,lead,heat,PRESSURE,Ultra Sonic Vibration,Formation of a first bond,pad,lead,Ultra Sonic Vibration,heat,PRESSURE,Capillary rises to loop height position,pad,lea
5、d,Capillary rises to loop height position,pad,lead,Capillary rises to loop height position,pad,lead,Capillary rises to loop height position,pad,lead,Capillary rises to loop height position,pad,lead,Formation of a loop,pad,lead,Formation of a loop,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead
6、,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,Formation of a second bond,pad,lead,heat,Formation of a second bond,pad,lead,heat,heat,pad,lead,heat,heat,pad,lead,heat,heat,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,Disconnection of the tail,pad,lead,Disconnection of the tail,pad,lead,Formation of a new free air ball,
