1、AP3776B+APR34309C_5V3A,Photo of PCB,Schematics,Bill Of Material,Transformer Specification,Transformer Specification,Electrical Diagram,Bobbin:EE19 Dilated5+5 PinAe=45,Reverse the bobbin for WD4,Core is connected to Pin 5.,Standby Power,10mW230V,8,Efficiency,Test Condition:Tested at end of PCB,Averag
2、e Efficiency115V: 85.64% 230V: 85.67%Frequency：50K3A,Output I-V Curve,Test Condition:Tested at end of PCB,Test Condition:Tested at end of PCB,Start up time,264Vac 3A,85Vac 3A,30.48ms,29.33ms,CH1:VoutCH2:Vac,Vout Ripple,85V 0A,265V 0A,Ripple: 22.4mV,Ripple: 22.4mV,Tested at end of PCBwith 104/47uF ca
3、pacitance,Test with coaxial cable,Vout Ripple,85V 3A,265V 3A,Tested at end of PCBwith 0.1uF/47uF capacitance,Ripple: 98.6mV,Ripple: 81.9mV,Ripple: 91.5mV,Ripple: 83.8mV,Test with coaxial cable,Dynamic,Vin=264VAC Vo_min=4.52V,Vin=85VAC Vo_min=4.39V,Tested at end of PCB,（0A-3A,50ms,100mA/us ）,Over sho
4、ot,Tested at end of PCB,3A to 0A,Vin=85VACVout_min=5.06VVout_max=5.54V,Vin=264VACVout_min=5.06VVout_max=5.54V,Under shoot,Vin=85VACVout_min=4.36VVout_max=5.35V,Tested at end of PCB,0A to 3A,Vin=264VACVout_min=4.52VVout_max=5.35V,Vds for Primary Mosfet,264Vac 3A,85Vac 3A,Vp-p=314V,Vp-p=566V,Vds for S
5、econdary Mosfet,264Vac 3A,85Vac 3A,Vp-p=20.6V,Vp-p=41.6V,Temperature,Vin=85Vac Iout=3A,CH1: AP3776: 67.2 CH2: APR34309: 71.5 CH3:MOSprimary：66.7CH4:Room temperature：25 CH5: Transformer：61.2,Open frame,Temperature,Vin=230Vac Iout=3A,CH1: AP3776: 61.8 CH2: APR34309: 70.8 CH3:MOSprimary：77.9CH4:Room temperature：25 CH5: Transformer：61.2,Open frame,Temperature,Vin=264Vac Iout=3A,CH1: AP3776: 62.4 CH2: APR34309: 71.3 CH3:MOSprimary：82.5CH4:Room temperature：25 CH5: Transformer：62.9,Open frame,EMI-Line,230V Full load,EMI-Neutral,230V Full load,Radiation,Vertical,Radiation,Horizontal,Summary,16,
