1、NL issvM .nullnonmarkingreturn !“#$%.nullnonmarkingreturn !“#$.null.nullnonmarkingreturn !“#$% 0 .nullnonmarkingreturn !“#.nulliS = 0 .nullnonmarkingreturn !“#.nullnonmarkingreturn !“#$% 0 .nullnonmarkingreturn !“#.nullvS = 0 .nullnonmarkingreturn !“#.null 0.3 .nullnonmarkingreturn !“#$%67.nullnonma
2、rkingreturn !“.null.nullnonmarkingreturn !“#$%;dis Vs0dtd0.nullnonmarkingreturn !“#$% VGS(th)VDS -VF0(z.B. -0,2 V)b)- -+-+VGS VGS(th)VDS -VF0(z.B. -0,7 V)c)MOSFET 1. MOSFET 2. MOSFET 0 MOSFET a)b)c)1.9b MOSFET MOSFET VDSVGS1.8a 1.9c 1.8a MOSFET MOSFET MOSFET FREDFETFast Recovery Epitaxial Diode Fiel
3、d Effect Transistors) 277 FREDFET n 1.2.1 IGBT 1.10 VGE VGE(th)IF (-IC)V(BR)CES-VCEICVGEICVGEVGE(th)gfs=ICVGEVCEa)b)a)b)MOSFET VCEVGEVGE(th)IGBT ICESICESVCEVCEVCESIGBT pin p+n n+VCESIGBT pnp VCER1.6IGBT p+1.2.2.1 MOSFET IGBT IGBT VGEVGE(th)( )VGE MOSFET gfs 1.10b gfs= dIC/dVGE= IC/( VGE-VGE(th)ICVCEIGBT MOSFETVGE(th)IC IGBTVCEsatIGBTnIGBT MOSFET PT IGBT VCEsatNPT IGBT ( 1.10 ) IGBT pn MOSFET IGBT nIGBT pin IGBT NPT IGBTIGBT IGBT 1.3 L/R 1/f 1.11a
