1、-20V P-Channel Enhancement Mode MOSFETDescription General Features Application DGSPackage Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity A5SHB SOT-23 180mm 8 mm 3000 units Dimensions SOT-23 Pin Configuration Rev:01.07.2021 1/Absolute Maximum Ratin
2、gs(TC=25 unless otherwise noted)5to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a Battery protection or in other Switching application.VDS=-20V ID=-4.9A RDS(ON)38m VGS=-4.5V Battery protection Load switch Uninterruptibl
3、e power supply Symbol Parameter Rating Units VDS Drain-Source Voltage-20 V VGS Gate-Sou ce Voltage 12 V IDTA=25 Continuous Drain Current,VGS-4.5V1-4.9 A IDTA=70 Continuous Drain Current,VGS-4.5V1-3.9 A IDM Pulsed Drain Current2-14 A PDTA=25 Total Power Dissipation3 1.31 W PDTA=70 Total Power Dissipa
4、tion3 0.84 W TSTG Storage Temperature Range-55 to 150 TJ Operating Junction Temperature Range-55 to 150 RJA Thermal Resistance Junction-Ambient 1 120/W RJA Thermal Resistance Junction-Ambient 1(t 10s)95/W PMV27UPEAThe uses advanced trench technology PMV27UPEAPMV27UPEA Rev:Electrical Characteristics(
5、TJ=25,unless otherwise noted)2/5Symbol Parameter Conditions Min.Typ.Max.Unit BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=-250uA-20-V BVDSS TJ BVDSS Temperature Coefficient Reference to 25,ID=-1mA-0.014-V/RDS(ON)Static Drain-Source On-Resistance2 VGS=-4.5V,ID=-4.9A-32 38 m VGS=-2.5V,ID=-3.4A-45 55
6、 VGS=-1.8V,ID=-2A-65 85 VGS(th)Gate Threshold Voltage VGS=VDS,ID=-250uA-0.4-1.0 V VGS(th)VGS(th)Temperature Coefficient-3.95-mV/IDSS Drain-Source Leakage Current VDS=-16V,VGS=0V,TJ=25-1 uA VDS=-16V,VGS=0V,TJ=55-5 IGSS Gate-Source Leakage Current VGS 12V,VDS=0V-100 nA gfs Forward Transconductance VDS
7、=-5V,ID=-3A-12.8-S Qg Total Gate Charge(-4.5V)VDS=-15V,VGS=-4.5V,ID=-3A-10.2 14.3 nC Qgs Gate-Source Charge-1.89 2.6 Qgd Gate-Drain Charge-3.1 4.3 Td(on)Turn-On Delay Time VDD=-10V,VGS=-4.5V,RG=3.3,ID=-3A-5.6 11.2 ns Tr Rise Time-40.8 73 Td(off)Turn-Off Delay Time-33.6 67 Tf Fall Time-18 36 Ciss Inp
8、ut Capacitance VDS=-15V,VGS=0V,f=1MHz-857 1200 pF Coss Output Capacitance-114 160 Crss Reverse Transfer Capacitance-108 151 IS Continuous Source Current1,4 VG=VD=0V,Force Current-4.9 A ISM Pulsed Source Current2,4-14 A VSD Diode Forward Voltage2 VGS=0V,IS=-1A,TJ=25-1 V trr Reverse Recovery Time IF=-
9、3A,di/dt=100A/s,TJ=25-21.8-nS Qrr Reverse Recovery Charge-6.9-nC Note:1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.2.The data tested by pulsed,pulse width 300us,duty cycle 2%3.The power dissipation is limited by 150 junction temperature 4.The data is theoretically the
10、 same as I D and I DM,in real applications,should be limited by total power dissipation.01.07.2021PMV27UPEA Rev:3/5 Typical Characteristics Fig.6 Normalized R DSON vs.T J 01.07.2021PMV27UPEARev:4/5 Fig.9 Normalized Maximum T ransient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 01.07.2021PMV27UPEAShanghai Leiditech Electronic Co.,Ltd Email:Tel:+86-021 50828806 Fax:+86-021 50477059 Rev:5/5Package Mechanical Data-SOT-23 01.07.2021PMV27UPEA
