1、30V N-Channel Enhancement Mode MOSFETDescription General Features Application Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3404B SOT-23 180mm 8 mm 3000 units Dimensions SOT-23 Pin Configuration Rev:01.07.2021 1/Absolute Maximum Ratings(T
2、C=25 unless otherwise noted)5to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a Battery protection or in other Switching application.VDS=30V ID=4.2A RDS(ON)38m VGS=10V Lithium battery protection Wireless impact Mobile pho
3、ne fast charging Symbol Parameter Max.Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V IDTA=25 Continuous Drain Current 4.2 A IDTA=70 Continuous Drain Current 2.6 A IDM Pulsed Drain Current 16 A PD Power Dissipation TA=25 1 W RJA Thermal Resistance,Junction to Ambient 125/W TJ,TSTG
4、 Operating and Storage Temperature Range-55 to+150 IRLML6346The uses advanced trench technology IRLML6346IRLML6346Rev:01.07.2021 2/Electrical Characteristics(TJ=25,unless otherwise noted)5Symbol Parameter Test Condition Min.Typ.Max.Units V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250A 30 32-V
5、 IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V,-1.0 A IGSS Gate to Body Leakage Current VDS=0V,VGS=20V-100 nA VGS(th)Gate Threshold Voltage VDS=VGS,ID=250A 1.2 1.5 2.5 V RDS(on)Static Drain-Source on-Resistance note2 VGS=10V,ID=4A-29 38 m VGS=4.5V,ID=3A-45 65 Ciss Input Capacitance VDS=15V,VGS
6、=0V,f=1.0MHz-233-pF Coss Output Capacitance-44-pF Crss Reverse Transfer Capacitance-33-pF Qg Total Gate Charge VDS=15V,ID=2A,VGS=10V-3-nC Qgs Gate-Source Charge-0.5-nC Qgd Gate-Drain(“Miller”)Charge-0.8-nC td(on)Turn-on Delay Time VDS=15V,ID=4A,RGEN=3,VGS=10V-4-ns tr Turn-on Rise Time-2.1-ns td(off)
7、Turn-off Delay Time-15-ns tf Turn-off Fall Time-3.2-ns IS Maximum Continuous Drain to Source Diode Forward Current-4 A ISM Maximum Pulsed Drain to Source Diode Forward Current-16 A VSD Drain to Source Diode Forward Voltage VGS=0V,IS=4A-1.2 V Note:1、The data tested by surface mounted on a 1 inch2 FR-
8、4 board with 2OZ copper.2、The data tested by pulsed,pulse width 300us,duty cycle 2%3、The power dissipation is limited by 150 junction temperature 4、The data is theoretically the same as I D and I DM,in real applications,should be limited by total power dissipation.IRLML6346Typical Characteristics Rev:01.07.2021 3/5 IRLML6346Rev:01.07.2021 4/5 IRLML6346Shanghai Leiditech Electronic Co.,Ltd Email:Tel:+86-021 50828806 Fax:+86-021 50477059 Rev:01.07.2021/5 5 IRLML6346
