1、 Product Summary VDS 60V ID 340mA RDS(ON)(at VGS=10V)2.5ohm RDS(ON)(at VGS=4.5V)3.0ohm General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input/Output Leakage Applications Battery operated systems Solid-state re
2、lays Direct logic-level interface：TTL/CMOS Absolute Maximum Ratings(TA=25 unless otherwise noted)Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS 20 V Drain Current TA=25 Steady State ID 340 mA TA=70 Steady State 272 Pulsed Drain Current A IDM 1.5 A Total Power Dissi
3、pation TA=25 PD 350 mW Thermal Resistance Junction-to-Ambient Steady State B RJA 357/W Junction and Storage Temperature Range TJ,TSTG-55+150 Ordering Information(Example)PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs)INNER BOX QUANTITY(pcs)OUTER CARTON QUANTITY(pcs)DELIVERY MODE F2 7002.3000
4、30000 120000 7“reel Enhancement Mode Field Effect Transistor N-Channel Rev:03.12.20211/5LM-MMBF170LM-MMBF170 Electrical Characteristics(TJ=25 unless otherwise noted)Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250A 60 V Zero Gate Volta
5、ge Drain Current IDSS VDS=60V,VGS=0V 1 A Gate-Body Leakage Current IGSS1 VGS=20V,VDS=0V 100 nA IGSS2 VGS=10V,VDS=0V 50 nA Gate Threshold Voltage VGS(th)VDS=VGS,ID=250A 1 1.5 2.5 V Static Drain-Source On-Resistance RDS(ON)VGS=10V,ID=-300mA 1.2 2.5 VGS=4.5V,ID=200mA 1.3 3.0 Diode Forward Voltage VSD I
6、S=300mA,VGS=0V 1.2 V Maximum Body-Diode Continuous Current IS 340 mA Dynamic Parameters Input Capacitance Ciss VDS=30V,VGS=0V,f=1MHZ 16 pF Output Capacitance Coss 10 Reverse Transfer Capacitance Crss 5.5 Switching Parameters Total Gate Charge Qg VGS=10V,VDS=30V,ID=0.3A 1.7 2.4 nC Turn-on Delay Time
7、tD(on)VGS=10V,VDD=30V,ID=300mA,RGEN=6 5 ns Turn-off Delay Time tD(off)17 Reverse recovery Time trr VGS=0V,IS=300mA,VR=25V,dIS/dt=-100A/s 30 ns A.Pulse Test:Pulse Width 300us,Duty cycle 2%.B.Device mounted on FR-4 PCB,1 inch x 0.85 inch x 0.062 inch.Rev:2/503.12.2021LM-MMBF170 Typical Performance Cha
8、racteristics Figure1.Output Characteristics Figure2.Transfer Characteristics Figure3.Capacitance Characteristics Figure4.Gate Charge Figure5.Drain-Source on Resistance Figure6.Drain-Source on Resistance Rev:3/503.12.2021LM-MMBF170 Figure7.Safe Operation Area Figure8.Switching wave Rev:4/503.12.2021LM-MMBF170 SOT-23 Package information SOT-23 Suggested Pad Layout Shanghai Leiditech Electronic Co.,Ltd Email:Tel:+86-021 50828806 Fax:+86-021 50477059Rev:5/503.12.2021LM-MMBF170
