1、 10 7 A/cm 2 A/cm 2 1 2 5.1 | | ke e = ) | | 44 . 0 exp( 0 T j j a = 1 E 2 E T1000K ) exp( 2 E B AE j E = A B E x Wa E x Wa a b c j 10 8 A/cm 2 T1000K d 1 V 0 E a |T| 2 1MeV 10 -14 m 10 4 1MeV 10 -13 m 10 -38 5.1.3 1 2 3 = 0 ) , ( x e dvp E D e j 1 dvp x x 2 D Ee R= ( ) 2 / ( ) 2 D=1-R 3 dvp x D Ee
2、T 0K ) 10 79 . 3 ( 10 83 . 6 exp 10 54 . 1 ) 0 ( 4 7 2 6 2 3 = j j A/cm 2 V/cm eV x ) exp( 2 E B AE j E = ) exp( 2 0 kT AT j M = 5.1.4 kT/d1 T 2 / 1 3 10 83 . 8 T T K V/cm ev ) ) / sin( / ) 0 ( ) ( d KT d KT j T j = a kT/d1 ) ( 6 1 1 ) 0 ( ) ( 2 L + + = d KT j T j b V/cm) T(K) kT/d j(T) 300 0.4 b 1.
3、03j(0) 4 10 7 1000 1.5 a 1.5j(0) P120 2 24 T1000K T j j T T 2000 3000K T j T j 2 E F E j j E E j j j 5.2.3 E j E= U j 10 -8 Pa 1954 25A 5h 1960 1.5mA 1000h 5. 3 1 2 3 j max lgj1/E n /cm 3 cm 10 22 3 5 10 9 10 14 10 18 3 5 10 7 3 5 10 5 10 13 cm-2 5. 4 10 5 10 6 A/cm 2 j a b 1968 Dr.C. A.Spindt FEA F
4、ED Field Emission Display FED FEA FED FED 3 FED SiO 2 1 m 200 m FED ITO STM 1986 (TEM) FIM STM E.W.Muller 1977 R.D.Yang 1972 STM 80 STM 1982 IBM G. B i n n i g H.Rohrer STM ERrska 1986 STM STM 111 7 7 4 111 7 7 P x P y P z P z P x P y P x P y XY P z 1nm P z P z P z XY P z STM V T J T s ) exp( 2 3 s B AV j T T = A B J T s ev 5 s J T J T CU V p (x,y) V p STM STM STM 1000 STM 0.1nm 0.01nm STM 1990 4 35 IBM 1991 7 4 SIM STM STM 10nm 48 Fe Cu IBM 6
