1、 http:/ HLP:rfr-elec i 2000/12/18 1 1 2 1 2.1 2 2.1.1 .2 2.1.2 .2 2.1.3 VHSIC/ VHSIC VLSI CMOS 3 2.1.4 GaAs MMIC .3 2.1.5 .4 2.2 4 3 4 3.1 6 3.2 ( ) 6 3.3 7 3.4 Si FET .7 3.5 8 3.6 8 3.7 8 3.8 GaAs FET 9 3.9 Si FET 9 3.10 10 3.11 10 3.12 10 3.13 11 4 11 4.1 TWT 11 4.2 (TWT) .12 4.2.1 .12 5 12 5.1 12
2、 6 13 6.1 13 6.1.1 .13 6.1.2 .14 6.2 14 6.2.1 .15 6.2.2 .17 http:/ HLP:rfr-elec ii 2000/12/18 7 17 7.1 18 7.2 19 8 19 8.1 19 9 20 10 20 10.1 20 11 21 11.1 21 12 21 12.1 21 13 21 13.1 21 14 22 14.1 22 15 22 15.1 22 16 23 17 23 18 23 19 24 .25 http:/ HLP:rfr-elec 1 2000/12/18 1 (reliability prediction
3、) (government-industry data exchange program) GIDEP (data base) (model base) MIL-HDBK-217F IC G 2 MIL-HDBK-217F (1). (2). MOS (3). MOS (4). MOS (5). (VHSIC/ VHSIC VLSI)CMOS ( 60K) (6). GaAs (7). GaAs MMIC (8). http:/ HLP:rfr-elec 2 2000/12/18 (9). (SAW) (10). 2.1 2.1.1 MIL-HDBK-217F 5.1 (1). / (2).
4、MOS / (3). (4). ( ) hr 10 fr , 6 L Q E Pkg , b T Chip , b p p p p l + p l = l p l = fr hr 10 6 Chip , b l = fr hr 10 6 T p = Pkg , b l = E p = Q p = L p = 2.1.2 MIL-HDBK-217F 5.2 ( ) L Q cyc E Pkg , b T Chip , b p p p l + p l + p l = l fr/10 6 hr p l fr hr 10 6 Die , b l = hr 10 fr 6 http:/ HLP:rfr-
5、elec 3 2000/12/18 T p = Pkg , b l = hr 10 fr 6 E p = cyc l = hr 10 fr 6 Q p = L p 2.1.3 VHSIC/ VHSIC VLSI CMOS MIL-HDBK-217F 5.3 VHSIC/ VHSIC VLSI CMOS EOS PT Q E Pkg , b CD T Mfg Die , b p l + p p p l + p p p l = l fr/ 6 hr p l = hr 10 fr 6 Die , b l = hr 10 fr 6 Mfg p = T p = CD p = Pkg , b l = hr
6、 10 fr 6 E p = Q p = PT p = EOS l = hr 10 fr 6 2.1.4 GaAs MMIC MIL-HDBK-217F 5.4 GaAs MMIC ( ) hr 10 fr , 6 L Q E Pkg , b A T Die , b p p p p l + p p l = l p l = hr 10 fr 6 Die , b l = hr 10 fr 6 T p = http:/ HLP:rfr-elec 4 2000/12/18 p A= Pkg , b p = hr 10 fr 6 E p = Q p = L p = 2.1.5 MIL-HDBK-217F
7、 5.5 ( )( ) hr 10 fr , 2 . 0 1 N 6 L Q F E C C p p p p p + l = l p l = hr 10 fr 6 C N= C l= E p= F p= Q p = L p = 2.2 (chip complexity failure rate) (bipolar) MOS / (programmable logic array, PLA) (programmable array logic, PAL) (gates) / (transistors) (bits) 3 (transistor) (diode) (opto-electric de
8、vice) MIL-S-19500 MIL-S-19500 JAN JANTX JANTXV ( p T ) (junction temperature) ( http:/ HLP:rfr-elec 5 2000/12/18 ) (diode) (low frequency) (high frequency) Si FET GaAs FET Si FET (SCR) hr 10 fr , 6 Q E A C 2 S R b p p p p p p p l = l p l hr 10 fr 6 b l hr 10 fr 6 R p 2 S p C p A p E p Q p ( ) ( ) l
9、b T S P A N T T S T T S N = + + + + + exp 273 273 D D A = e = N T = M T http:/ HLP:rfr-elec 6 2000/12/18 MIL-HDBK-217F (Si)NPN A 0.0189 NT 1052 TM 448 P 10.5 T 150 PNP A 0.0648 NT 1324 TM 448 P 14.2 T 150 3.1 / / / (Avanlance zener) MIL-HDBK- 217F 6.1 l l p p p p p p b S C T E Q = fr/10 6 hr l p= fr
10、/10 6 hr l b= fr/10 6 hr l S= p C= p T= p E= p Q= 3.2 ( ) MIL-HDBK-217F ( ) 35 GHz Si IMPATT Gunn/Bulk Tunnel Back ( ) Schottky (barrier)( ) 200 Mhz 35 GHz varactor MIL-HDBK-217F 6.2 l l p p p p p p b R A T E Q = fr/10 6 hr l p= fr/10 6 hr l b= fr/10 6 hr p R= p A= p T= http:/ HLP:rfr-elec 7 2000/12
11、/18 p E= p Q= 3.3 200 Mhz NPN PNP MIL-HDBK-217F 6.3 l l p p p p p p p b S R A T E Q = fr/10 6 hr l p= fr/10 6 hr l b= fr/10 6 hr p S= p R= p T= p E= p Q= 3.4 Si FET Si FET 400 MHz N-channel P-channel Si FET MOSFET JFET MIL-HDBK- 217F 6.4 Si FET l l p p p p p b A T E Q = fr/10 6 hr l p= fr/10 6 hr l
12、b= fr/10 6 hr p A= p T= p E= p Q= http:/ HLP:rfr-elec 8 2000/12/18 3.5 MIL-HDBK-217F 6.5 l l p p p p b T E Q = fr/10 6 hr l p= fr/10 6 hr l b= fr/10 6 hr p T= p E= p Q= 3.6 200 MHz 1 W / MIL-HDBK-217F 6.6 l l p p p p p p b S R T E Q = fr/10 6 hr l p= fr/10 6 hr l b= fr/10 6 hr p S= p R= p T= p E= p
13、Q= 3.7 1 W / MIL-HDBK-217F 6.7 l l p p p p p p b A M T E Q = fr/10 6 hr http:/ HLP:rfr-elec 9 2000/12/18 l p= fr/10 6 hr l b= fr/10 6 hr p A= p M= p T= p E= p Q= 3.8 GaAs FET 1 GHz GaAs FET MIL- HDBK-217F 6.8 GaAs FET l l p p p p p p b A M T E Q = fr/10 6 hr l p= fr/10 6 hr l b= fr/10 6 hr p A= p M=
14、 p T= p E= p Q= 3.9 Si FET Si FET 400 MHz 300 mW Si FET MIL-HDBK-217F 6.9 Si FET l l p p p p b T E Q = fr/10 6 hr l p= fr/10 6 hr l b= fr/10 6 hr p T= http:/ HLP:rfr-elec 10 2000/12/18 p E= p Q= 3.10 (thyristor) (SCR) MIL- HDBK-217F 6.10 l l p p p p p p b S R T E Q = fr/10 6 hr l p= fr/10 6 hr l b=
15、fr/10 6 hr p S= p R= p T= p E= p Q= 3.11 MIL- HDBK-217F 6.11 l l p p p p b T E Q = fr/10 6 hr l p= fr/10 6 hr l b= fr/10 6 hr p T= p E= p Q= 3.12 MIL-HDBK-217F 6.12 http:/ HLP:rfr-elec 11 2000/12/18 l l p p p p b T E Q = fr/10 6 hr l p= fr/10 6 hr l b= fr/10 6 hr p T= p E= p Q= 3.13 3 MW/cm 2 25 amps MIL-HDBK-217F 6.13 l l p p p p p p p b I A P T E Q = fr/10 6 hr l p= fr/10 6 hr l b= fr/10 6 hr p I= p A=
