1、VSUPPLY VLOADCSLOVIN VOUTLM5150AGNDVCCCOMPRTENSTATUSVSETSYNCCopyright 2017, Texas Instruments IncorporatedAVCCPGNDLoad Current (A)Efficiency(%)0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3707580859095100D008VSUPPLY=5.5VVSUPPLY=4.5VVSUPPLY=3.5VVSUPPLY=2.5VProductFolderOrderNowTechnicalDocumentsTools &Softw
2、areSupport &CommunityAn IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA. English Data Sheet: SNVSAP6LM5150-Q1ZHCSGU1 SEPTEMBER 2017LM5150-Q1宽宽输
3、输入入电电压压车车用用低低IQ升升压压控控制制器器11特特性性1符合AEC-Q100标准：器件温度1级：-40至+125的环境运行温度范围器件人体模型(HBM)静电放电(ESD)分类等级2充电器件模型(CDM) ESD分类等级C4B输出电压 5V（65V绝对最大值）时具有1.5V至42V的宽输入电压范围低关断电流(IQ 5A)低待机电流(IQ 15A)四种可编程输出电压选项和两种可选配置 6.8V、7.5V、8.5V或10.5V启停或紧急呼叫配置 220kHz至2.3MHz可调开关频率自动唤醒和待机模式转换可选的时钟同步升压状态指示器 1.5A峰值MOSFET栅极驱动器可调逐周期电流限制热关断
4、具有可湿性侧面的16引脚WQFN使用LM5150-Q1并借助WEBENCH电源设计器创建定制设计2应应用用汽车启停系统汽车紧急呼叫系统电池供电升压转换器3说说明明LM5150-Q1器件是宽输入范围自动升压控制器。该器件适合用作预升压转换器，在汽车启动期间维持汽车电池的输出电压，或在缺少汽车电池期间维持备用电池的输出电压。可以通过一个电阻器在220kHz与2.3MHz之间对LM5150-Q1开关频率进行编程。快速开关( 2.2MHz)可最大限度地降低调幅频带干扰，并支持实现小解决方案尺寸和快速瞬态响应。LM5150-Q1在输入或输出电压高于预设待机阈值时以低IQ待机模式运行，并且在输出电压降至预
5、设唤醒阈值以下时自动唤醒。处于或未处于低IQ待机模式的器件瞬态，可在轻负载下延长电池寿命。单个电阻器对目标输出稳定电压以及配置进行编程。其他特性包括低关断电流、升压状态指示器、可调逐周期电流限制和热关断。器器件件信信息息(1)器器件件型型号号封封装装封封装装尺尺寸寸（标标称称值值）LM5150-Q1 WQFN (16) 4.00mm x 4.00mm(1)如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。典典型型应应用用电电路路效效率率（VLOAD= 6.8V，FSW= 440kHz）2LM5150-Q1ZHCSGU1 SEPTEMBER 2017 Copyright 2017, Tex
6、as Instruments Incorporated目目录录1特特性性 12应应用用 13说说明明 14修修订订历历史史记记录录. 25 Pin Configuration and Functions. 36 Specifications. 46.1 Absolute Maximum Ratings 46.2 ESD Ratings 46.3 Recommended Operating Conditions. 56.4 Thermal Information 56.5 Electrical Characteristics. 56.6 Typical Characteristics 87 De
7、tailed Description 107.1 Overview. 107.2 Functional Block Diagram. 117.3 Feature Description. 117.4 Device Functional Modes 178 Application and Implementation 218.1 Application Information 218.2 Typical Application . 248.3 System Examples . 319 Power Supply Recommendations 3310 Layout. 3310.1 Layout
8、 Guidelines . 3310.2 Layout Example 3411器器件件和和文文档档支支持持. 3511.1器件支持 3511.2接收文档更新通知. 3511.3社区资源 3511.4商标. 3511.5静电放电警告. 3511.6 Glossary 3512机机械械、封封装装和和可可订订购购信信息息. 364修修订订历历史史记记录录日日期期修修订订版版本本说说明明2017年9月*初始发行版。Copyright 2017, Texas Instruments IncorporatedPVCCCSVINCOMPLO1516STATUSEP13RTSYNCVSETAGNDEN141
9、65 872341211109NCPGNDAVCCVOUTNCAP APAP AP3LM5150-Q ZHCSGU1 SEPTEMBER 2017Copyright 2017, Texas Instruments Incorporated(1) G = GROUND, I = INPUT, O = OUTPUT, P = POWER5 Pin Configuration and FunctionsRUM Package16-Pin WQFNTop ViewPin FunctionsPIN I/O(1) DESCRIPTIONNO. NAME1 SYNC IExternal synchroniz
10、ation clock input pin. The internal oscillator is synchronized to an externalclock by applying a pulse signal into the SYNC pin in the start-stop configuration. Connectdirectly to ground if not used or in emergency call configuration. Maximum duty cycle limitcan be programmed by controlling the exte
11、rnal synchronization clock frequency.2 STATUS O Status indicator with an open-drain output stage. Internal pulldown switch holds the pin lowwhen the device is not boosting. The pin can be left floating if not used.3 EN I Enable pin. If EN is below 1 V, the device is in shutdown mode. The pin must be
12、 raisedabove 2 V to enable the device. Connect directly to VOUT pin for an automatic boost.4 VOUT I/P Boost output voltage-sensing pin and input to VCC regulator. Connect to the output of theboost converter.5 PVCC O/P Output of the VCC bias regulator. Decouple locally to PGND using a low-ESR or low-
13、ESLceramic capacitor located as close to the device as possible.6 NC No internal electrical connection. Leave the pin floating or connect directly to ground.7 AVCC I/PAnalog VCC supply input. Decouple locally to AGND using 0.1-F low-ESR or low-ESLceramic capacitor located as close to the device as p
14、ossible. Connect to the PVCC pinthrough 10- resistor.8 NC No internal electrical connection. Leave the pin floating or connect directly to ground.9 LO O N-channel MOSFET gate drive output. Connect to the gate of the N-channel MOSFETthrough a short, low inductance path.10 PGND G Power ground pin. Con
15、nect to the ground connection of the sense resistor through a wideand short path.11 AGND G Analog ground pin. Connect to the analog ground plane through a wide and short path.12 CS I Current sense input pin. Connect to the positive side of the current sense resistor through ashort path.13 COMP O Out
16、put of the internal transconductance error amplifier. The loop compensation componentsmust be connected between this pin and AGND.14 RT I Switching frequency setting pin. The switching frequency is programmed by a single resistorbetween RT and AGND.4LM5150-Q1ZHCSGU1 SEPTEMBER 2017 Copyright 2017, Te
17、xas Instruments IncorporatedPin Functions (continued)PIN I/O(1) DESCRIPTIONNO. NAME15 VSET IConfiguration selection and VOUT regulation target programming pin. During initial power on,a resistor between the VSET pin and AGND configures the VOUT regulation target and theconfiguration.16 VIN I Boost i
18、nput voltage sensing pin. Connect to the input supply of the boost converter. EP Exposed pad of the package. No internal electrical connection to silicon die. The EP iselectrically connected to anchor pads. The EP must be connected to the large ground copperplain to reduce thermal resistance. AP Anc
19、hor pad of the package. No internal electrical connection to silicon die. The AP iselectrically connected to the EP. The AP can be left floating or soldered to the groundcopper.(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
20、ratingsonly, which do not imply functional operation of the device at these or any other conditions beyond those indicated under RecommendedOperating Conditions . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.(2) The pin voltage is clamped by an int
21、ernal circuit, and is not specified to have an external voltage applied.(3) STATUS can go below ground during the STATUS low-to-high transition. The negative voltage on STATUS during this transition isclamped by an internal diode and it does not damage the device.(4) High junction temperatures degra
22、de operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125C.6 Specifications6.1 Absolute Maximum RatingsOver the recommended operating junction temperature range of 40C to 150C (unless otherwise noted)(1)MIN MAX UNITInputVIN to AGND -0.3 65VVOUT to AGND -0.3 65
23、EN to AGND -0.3 65RT to AGND(2) -0.3 AVCC+0.3SYNC to AGND -0.3 7VSET to AGND -0.3 7CS to AGND (DC) -0.3 AVCC+0.3CS to AGND (40ns transient) -1.0 AVCC+0.3CS to AGND (20ns transient) -2.0 AVCC+0.3PGND to AGND -0.3 0.3OutputLO to AGND (DC) -0.3 PVCC+0.3VLO to AGND (40ns transient) -1.0 PVCC+0.3LO to AG
24、ND (20ns transient) -2.0 PVCC+0.3STATUS to AGND(3) -0.3 65COMP to AGND(2) -0.3 AVCC+0.3AVCC to AGND -0.3 7PVCC to AVCC -0.3 0.3TJ JunctionTemperature(4) -40 150 Tstg Storage Temperature -55 150 (1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specificati
25、on.6.2 ESD RatingsMIN MAX UNITV(ESD) Electrostatic dischargeHuman body model (HBM), per AEC Q100-002(1) 2000 2000VCharged device model(CDM), per AEC Q100-011Corner pins 750 750Other pins 500 5005LM5150-Q ZHCSGU1 SEPTEMBER 2017Copyright 2017, Texas Instruments Incorporated(1) Operating Ratings are co
26、nditions under the device is intended to be functional. For specifications and test conditions, see ElectricalCharacteristics.(2) The device requires minimum 5V at VOUT pin to start up(3) VPVCC should be less than VVOUT + 0.3 V(4) High junction temperatures degrade operating lifetimes. Operating lif
27、etime is derated for junction temperatures greater than 125C.6.3 Recommended Operating ConditionsOver the recommended operating junction temperature range of 40C to 150C (unless otherwise specified)(1)MIN NOM MAX UNITVVIN Boost input voltage sense 1.5 42 VVVOUT Boost output voltage sense(2) 5 42 VVE
28、N EN input 0 42 VVPVCC PVCC Voltage(3) 4.5 5 5.5 VVSYNC SYNC Input 0 5.5 VVCS Current sense Input 0 0.3 VFSW Typical switching srequency 220 2300 kHzFSYNC Synchronization pulse frequency 220 2300 kHzTJ Operating junction temperature(4) 40 150 C(1) For more information about traditional and new therm
29、al metrics, see the Semiconductor and IC Package Thermal Metrics applicationreport.6.4 Thermal InformationTHERMAL METRIC(1)LM5150-Q1UNITRUM (WQFN)16 PINSRJA Junction-to-ambient thermal resistance 44.4 C/WRJC(top) Junction-to-case (top) thermal resistance 33.4 C/WRJB Junction-to-board thermal resista
30、nce 19.5 C/WJT Junction-to-top characterization parameter 0.5 C/WJB Junction-to-board characterization parameter 19.3 C/WRJC(bot) Junction-to-case (bottom) thermal resistance 2 C/W6.5 Electrical CharacteristicsTypical values correspond to TJ = 25C. Minimum and maximum limits apply over TJ = -40C to
31、125C. Unless otherwisestated, VVOUT = 6.8 V, RT = 9.09 kPARAMETER TEST CONDITIONS MIN TYP MAX UNITSUPPLY CURRENTISHUTDOWN(VOUT) VOUT shutdown current VVOUT = 12 V, VEN = 0 V 5 12 AISTANDBY(VOUT) VOUT standby current (PVCC inregulation, STATUS is low) VVOUT = 12 V, VEN = 3.3 V, RSET =90.9 k 15 25 AIW
32、AKEUP(VOUT) VOUT operating current (excludecurrent into RT resistor) VVOUT = 10.5 V, VEN = 2.5 V, non-switching, RT = 9.09 k1.2 2.0 mAISHUTDOWN(VIN) VIN shutdown current VVIN = 12 V, VEN = 0 V 0.1 0.5 AISTANDBY(VIN) VIN standby current VVIN = 12 V, VEN = 3.3 V, RSET = 29.4k 0.1 0.5 AIWAKEUP(VIN) VIN
33、 operating current VVIN = 10.5 V, VEN = 2.5 V, non-switching, RT = 9.09 k30 45 AVCC REGULATORVVCC-REG-NOLOAD PVCC regulation VVOUT = 6.0 V, No load, wake-upmode 4.75 5 5.25 VVVCC-REG-FULLLOAD PVCC regulation VVOUT = 5.0 V, IPVCC = 70 mA 4.5 4.8 VVVCC-UVLO-RISING AVCC UVLO threshold AVCC rising 4.1 4
34、.3 4.5 VVVCC-UVLO-FALLING AVCC UVLO threshold AVCC falling 3.9 4.1 4.3 V6LM5150-Q1ZHCSGU1 SEPTEMBER 2017 Copyright 2017, Texas Instruments IncorporatedElectrical Characteristics (continued)Typical values correspond to TJ = 25C. Minimum and maximum limits apply over TJ = -40C to 125C. Unless otherwis
35、estated, VVOUT = 6.8 V, RT = 9.09 kPARAMETER TEST CONDITIONS MIN TYP MAX UNITVVCC-UVLO-HYS AVCC UVLO hysteresis 0.2 VIVCC-CL PVCC sourcing current limit VPVCC = 0 V, wake-up mode 75 mAENABLEVEN-RISING Enable threshold EN rising 1.7 2 VVEN-FALLING Enable threshold EN falling 1 1.3 VIEN EN bias curren
36、t VEN = 42 V 100 nA6.8-V SETTINGVVOUT-REG VOUT regulation target RSET = 29.4 k or 90.9 k 6.66 6.80 6.98 VVVOUT-WAKEUP VOUT wake-up threshold(VVOUT-REG+3%)RSET = 29.4 k or 90.9 k, VOUTfalling 6.83 7.00 7.14 VVVOUT-STANDBY1 VOUT standby threshold(VVOUT-REG+6%, EC config)RSET = 90.9 k, VOUT rising 7.02
37、 7.21 7.35 VVVOUT-STATUS-OFF VOUT status off threshold(VVOUT-REG +12%, EC config)RSET = 90.9 k, VOUT rising 7.42 7.62 7.81 VVVOUT-STANDBY2 VOUT standby threshold(VVOUT-REG+24%, SS config)RSET = 29.4 k, VOUT rising 8.22 8.43 8.60 VVVIN-STANDBY VIN standby threshold(VVOUT-WAKEUP + 1.0 V, SS config)RSE
38、T = 29.4 k, VIN rising 7.82 8.00 8.19 V7.5-V SETTINGVVOUT-REG VOUT regulation target RSET = 19.1 k or 71.5 k 7.37 7.50 7.67 VVVOUT-WAKEUP VOUT wake-up threshold(VVOUT-REG+3%)RSET = 19.1 k or 71.5 k, VOUTfalling 7.52 7.73 7.88 VVVOUT-STANDBY1 VOUT standby threshold(VVOUT-REG+6%, EC config)RSET = 71.5
39、 k, VOUT rising 7.74 7.95 8.11 VVVOUT-STATUS-OFF VOUT status off threshold(VVOUT-REG +12%, EC config)RSET = 71.5 k, VOUT rising 8.19 8.40 8.61 VVVOUT-STANDBY2 VOUT standby threshold(VVOUT-REG+24%, SS config)RSET = 19.1 k, VOUT rising 9.07 9.30 9.46 VVVIN-STANDBY VIN standby threshold(VVOUT-WAKEUP +
40、1.0 V, SS config)RSET = 19.1 k, VIN rising 8.50 8.73 8.93 V8.5-V SETTINGVVOUT-REG VOUT regulation target RSET = 9.53 k or 54.9 k 8.37 8.50 8.69 VVVOUT-WAKEUP VOUT wake-up threshold(VVOUT-REG+3%)RSET = 9.53 k or 54.9 k, VOUTfalling 8.52 8.76 8.93 VVVOUT-STANDBY1 VOUT standby threshold(VVOUT-REG+6%, E
41、C config)RSET = 54.9 k, VOUT rising 8.78 9.01 9.19 VVVOUT-STATUS-OFF VOUT status off threshold(VVOUT-REG +12%, EC config)RSET = 54.9 k, VOUT rising 9.28 9.52 9.75 VVVOUT-STANDBY2 VOUT standby threshold(VVOUT-REG+24%, SS config)RSET = 9.53 k, VOUT rising 10.29 10.54 10.72 VVVIN-STANDBY VIN standby th
42、reshold(VVOUT-WAKEUP + 1.0 V, SS config)RSET = 9.53 k, VIN rising 9.50 9.76 9.98 V10.5-V SETTINGVVOUT-REG VOUT regulation target RSET = GND or 41.2 k 10.31 10.50 10.75 VVVOUT-WAKEUP VOUT wake-up threshold(VVOUT-REG+3%)RSET = GND or 41.2 k, VOUT falling 10.53 10.82 11.02 VVVOUT-STANDBY1 VOUT standby
43、threshold(VVOUT-REG+6%, EC config)RSET = 41.2 k, VOUT rising 10.84 11.13 11.33 V7LM5150-Q ZHCSGU1 SEPTEMBER 2017Copyright 2017, Texas Instruments IncorporatedElectrical Characteristics (continued)Typical values correspond to TJ = 25C. Minimum and maximum limits apply over TJ = -40C to 125C. Unless o
44、therwisestated, VVOUT = 6.8 V, RT = 9.09 kPARAMETER TEST CONDITIONS MIN TYP MAX UNIT(1) VCL at the current limit comparator input is 10 x VCSTHVVOUT-STATUS-OFF VOUT status off threshold(VVOUT-REG +12%, EC config)RSET = 41.2 k, VOUT rising 11.46 11.76 12.04 VVVOUT-STANDBY2 VOUT standby threshold(VVOU
45、T-REG+24%, SS config)RSET = GND, VOUT rising 12.70 13.02 13.24 VVVIN-STANDBY VIN standby threshold(VVOUT-WAKEUP + 1.0 V, SS config)RSET = GND, VIN rising 11.47 11.82 12.11 VRTVRT-REG RT regulation voltage 1.2 VCLOCK SYNCHRONIZATIONVSYNC-RISING SYNC rising threshold 2.0 2.4 VVSYNC-FALLING SYNC fallin
46、g threshold 0.4 1.5 VPULSE WIDTH MODULATION AND OSCILLATORFSW1 Switching frequency RT = 93.1 k 204 239 270 kHzFSW2 Switching frequency RT = 9.09 k 2100 2300 2500 kHzFSW3 Switching frequency RT = 9.09 k,FSYNC = 2.0 MHz2000 kHzTON-MIN Forced minimum on-time SS config, VCOMP = 0 V 30 50 70 nsDMIN Minim
47、um duty cycle limit (EC config)RT = 9.09 k, VVIN = 1.5 V, VVOUT =6.8 V, VCOMP = 0 V 60 %RT = 93.1 k, VVIN = 8.4 V, VVOUT =10.5 V, VCOMP = 0 V 16 %DMAX Maximum duty cycle limit SS config, RT = 9.09 k 83 87 91.5 %EC config, RT = 93.1 k 83 87 91.5 %CURRENT SENSEVCSTH Current limit threshold (CS-AGND)(1
48、)VVIN = 5.1 V, VVOUT = 6.8 V at 25%DC 102 120 138 mVVVIN = 3.4 V, VVOUT = 6.8 V at 50%DC 102 120 138 mVVVIN = 1.7 V, VVOUT = 6.8 V at 75%DC 102 120 138 mVERROR AMPLIFIERGm Transconductance 2 mA/VCOMP souring current VCOMP = 0 V 312 ACOMP sinking current VCOMP = 1.5 V 120 ACOMP clamp voltage 2.4 2.6
49、VCOMP to PWM offset 0.3 VSTATUSLow-state voltage drop 1-mA sinking 0.1 VSTATUS rise to LO delay 5-k pullup to 5 V 4 5 6 sMOSFET DRIVERHigh-state voltage drop 50-mA sinking 0.075 VLow-state voltage drop 50-mA sourcing 0.055 VTHERMAL SHUTDOWN (TSD)Thermal shutdown threshold Temperature rising 175 CThermal shutdown hysteresis 15 CRT (k:)Frequency(kHz)0 10 20
