1、6.5 过剩载流子的寿命Shockley-Read-H all Theory of recombination Trap： recombination centerProcess1： Capture of electronProcess2： Emission of electronProcess3： Capture of holeProcess4： Emission of holeThe four basic trapping and emission processes for the case of an acceptor-type trap.Excess Carrier Lifetime
2、Process 1: The capture of an electron from the conduction band by an initially neutral empty trap.Process 2: The inverse of process 1 - the emission of an electron that is initially occupying a trap level back into the conduction band.Process 3: The capture of a hole from the valence band by a trap
3、containing an electron. (Or we may consider the process to be the emission of an electron from the trap into the valence band)。Process 4: The inverse of process 3 - the emission of a hole from a neutral trap into the valence band. (Or we may consider this process to be the capture of an electron from the valence band).Excess Carrier LifetimeSince R is the recombination rate of the excess carriers, we may writeCarrier Lifetime calculationwhere is the excess carrier concentration and is the lifetime of the excess carriers.
