1、Note on the characteristic data given - Data on the characteristics of the products described in this document based on the results of evaluations carried out by the company. This does not guarantee that the characteristics of the product conform with your usage environment. Before use, review the u
2、sage conditions based on evaluation data obtained from the equipment and substrates actually used. Products Development Department Advanced Material Division TO BE KEPT SECRETS FROM OUTSIDERS 10 December 2012 TECHNICAL REPORT CP6920F3 Anisotropic Conductive Film for Chip on Glass TO BE KEPT SECRETS
3、FROM OUTSIDERS Note：This report has been prepared on the basis of our reliable tests, however is not intended to guarantee the performance described hereunder. 10 December 2012 1 Items CP6920F3 Remarks Curing system Epoxy-Anion Structure and thickness 1) Cover film / color 25m / transparent 1) 2) 3)
4、 4) 2) ACF-layer 10m 3) NCF-layer 10m 4) Base film / color 38m / white Conductive particles 1) Material Au/Ni plated resin 1) 2) 2) Insulator coated Yes Particle diameter 3m Minimum overlap area of conductors 1300m 2 *1 Minimum conductor space 12m Space between neighboring circuits. Minimum bump spa
5、ce 10m Space between bumps. *1: The contact area needs to trap at least three particles (average -4.5) and where the faced conductor overlaps. Specifications TO BE KEPT SECRETS FROM OUTSIDERS Note：This report has been prepared on the basis of our reliable tests, however is not intended to guarantee
6、the performance described hereunder. 10 December 2012 2 items CP6920F3 Remarks ACF laminating conditions Temperature 6080 *2 Pressure 0.31.0MPa *3 Time 12sec *4 Main bonding conditions Temperature 190 *2 Pressure 6080MPa *5 Time 5sec *4 items CP6920F3 Remarks Elastic modulus at 30 2.6GPa DMA Glass t
7、ransition temperature (Tg) 146 DMA, tan peak *1: Bonding condition may differ depending on chip size and metal pattern. We recommend this as a starting point to determine your own optimized conditions. *2: Temperature of ACF lamination and main bonding: It is not equipment temperature, but actual te
8、mperature of ACF. *3: Pressure of ACF lamination: It is calculated based on the area of ACF lamination. *4: Time of ACF lamination and main bonding: Time from the start of bonding to the point where the temperature reaches the target. *5: The pressure is calculated based on the total area of bumps.
9、Bonding conditions *1 Properties of cured ACF Bonding conditions and Properties TO BE KEPT SECRETS FROM OUTSIDERS Note：This report has been prepared on the basis of our reliable tests, however is not intended to guarantee the performance described hereunder. 10 December 2012 3 IC : 1.8mm20mm, t= 0.5
10、mm Pattern ITO : ITO=10/, t= 0.7mm glass Bonding Condition : 180-200 ,80MPa,5sec Measurement : FT-IR Method Reaction rate 5sec 0 20 40 60 80 100 170 180 190 200 210 Bonding temp. Reaction rate % 5secTO BE KEPT SECRETS FROM OUTSIDERS Note：This report has been prepared on the basis of our reliable tes
11、ts, however is not intended to guarantee the performance described hereunder. 10 December 2012 4 IC : 1.8mm20mm, t= 0.5mm, Au-plated bump Pattern ITO : ITO=10/, t=0.7mm glass Particle capture Particle Capture on bump 0 5 10 15 20 25 30 35 40 45 50 55 60 1000 1500 2000 2500 3000 bump aream 2 particle
12、 capturepcs MAX AVG MIN Paticle Capture on a bump(Statistics) 0 5 10 15 20 25 30 35 1000 1500 2000 2500 3000 bump aream 2 particle capture(psc) AVG-3 AVG-4.5 TO BE KEPT SECRETS FROM OUTSIDERS Note：This report has been prepared on the basis of our reliable tests, however is not intended to guarantee
13、the performance described hereunder. 10 December 2012 5 IC : 1.8mm20mm, t= 0.5mm Bump 30m85m, Au-plated bump Pattern ITO : ITO=10/, t=0.7mm glass Bonding Condition : 190,200-80MPa-5sec Aging Condition : 8585%RH Current input Voltage measurement Actual measurement portion Pattern in IC Pattern on gla
14、ss Bump I V Current input Voltage measurement Actual measurement portion Pattern in IC Pattern on glass Bump I V Conductive resistance 0 10 20 30 40 50 60 0 250 500 Aging time hours Conductive Resistance Max Avg. 0 10 20 30 40 50 60 0 250 500 Aging time hours Conductive Resistance Max Avg. 190,80MPa
15、,5sec 200 ,80MPa,5sec TO BE KEPT SECRETS FROM OUTSIDERS Note：This report has been prepared on the basis of our reliable tests, however is not intended to guarantee the performance described hereunder. 10 December 2012 6 IC : 1.5mm13mm, t= 0.5mm, Au-plated bump Pattern ITO : ITO=10/, t=0.7mm glass Bonding Condition : 190-80MPa-5sec Aging Condition : 8585%RH R Pattern in IC Pattern on glass Bump R Pattern in IC Pattern on glass Bump Insulation resistance 1.E+07 1.E+08 1.E+09 1.E+10 1.E+11 1.E+12 1.E+13 0 250 500 Aging time hours Insulation Resistance Max Avg Min
