1、 M;r#Z蔡 苇1, 2 符春林1, 3 高家诚2 邓小玲1 林泽彬1(1. i S/8 i 401331;2. iv S i 400044;3.0 S/v0“ qSE L i 610054)Latest Progress of Photovoltaic Effect and FormationMechanism of Ferroelectric Thin FilmsCai Wei1,2,Fu Chunlin1,3 ,Gao Jiacheng2 ,Deng Xiaoling1, Lin Zebin1(1.SchoolofMetallurgicaland MaterialsEngineerin
2、g , ChongqingUniversity ofScience andTechnology, Chongqing 401331, China;2.College of MaterialsScience andEngineering, ChongqingUniversity, Chongqing 400044, China ;3.StateKey LaboratoryofElectronicThinFilmsand IntergratedDevices, University of ElectronicScience andTechnology ofChina, Chengdu 610054
3、, China)Abstract The latest development in the field of the anomalous photovoltaic effect and its possible formation mecha-nism of the ferroelectric thin films were tentatively reviewed.The discussions centered on,firstly,the ferroelectric depen-dence of the photovoltaic characteristics, interfacial
4、 effect, size effect, and space charge effect of the lead zirconate ti-tanate,lead lanthanum zirconate titanate ferroelectric thin films,and bismuth ferrite multi-ferroic thin films;next,the pho-tovoltaic mechanism of the ferroelectric films;and finally ,the R 3ur, O;+ VYV e,M;、; z 、;. Z 。R.Ramesh 1
5、9 ?C B+C:BFO; 3 9v7 AM。m4 PLZT;+(; 3( )1“Fig.4 Thickness dependence of short circuit photocurrent Jsc and open circuit photovoltage Vocin the polycrystalline and epitaxial PLZT thin filmsm5 PZT j;+(; 3( )1“Fig.5 Grain size dependence of short circuit photocurrent Iscand open circuit photovoltage Voc
6、 in the PZT thin films1.4 bWrM、 (i bW,|YM;+。+ 24 r|/!PZTM;+ H?C: 700 |PZT Kv; 3 ( m6 U), y K bW ,O P +V 、/ K, P ; 3 Kv。2 M;“ -, R VM ;: #M;vM8 ,M8 l;0 3 0(0 b),; 30 b QZ_ = z/sY_562 b S / 32 m6 r|/PZT; 3 3 eV), Vn; iV, O , 3; 3 l,ET ? 。 v : , , ,. 7w A +Y J . b S/ ,2011,31(1):124-127 3 b,f , v ,. CI
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