1、E q8 q/ 张 波X 陈万军 邓小川 汪志刚 李肇基(0 S/v0“ qSE L i,610054)2009-07-01 l, 2009-09-05 lK1:T 8 V, z8( GaN) A !s ?, aav q 8 , + Y 5 (Schrdinger)ZAlGaN/GaN HEMT qI-V# t= 49b q q7, q A I n M u q ?Yb H, I n q qaav ,yN1 raa0 %M qa2DEG i1“9 y GaN q q A I ny b “ -,S=GaN q q nb2.2/ M , GaN/ | vZ,GaN q q7, i“GbB,9 AlG
2、aN/GaN HEMT LC/ b , LC9 AlGaN/GaN HEMTZ, “ -S= AlGaNaEaPEZE, Y L s , LC il9 HEMT qbN, AlGaN| q M u2DEGi,V79v qYE;7E EY K|/V J,7 O V eb“ -, 3 PGaNAlGaN1 4,7 O/ a1, q_la ?Z1bK,B/ $ LC9 AlGaN/GaN HEMT q q50b/ YV 08ZE| 0(F- )o+E/AlGaN =, 0 O, | 6AlGaN2DEG ,V7o+E/ 2DEG,1b F 0 V U:V th = B/e - dR/E- $Ec/e
3、 + Ef0/e - eNb/Cb- eEd0dxx0NSi(x) - NF(x)dx - edNst/ E( 4)T, B -8o+ ; R s ) ;d AlGaN ;NSi(x) Si i;$Ec AlGaN/GaNs71 fo: q8 q/ ) M ; Ef0 Fermi ?)GaN ?); E AlGaN ; Nb ( Buffer)rJW ; Cb Buffer-2DEGrJW ;e 0,NF(x) i;Nst V JW b=, C E 3/ b “ - EAlGaN/GaN HEMT q q/ K aKWb 7HEMT qo+EP q # T T AlGaN/GaN HEMT V
4、E5b EGaN MOSFET q ?z % 5,7 OGaN MOSFET q HEMT q ) rb M , “(GaAs)8“E 3/ , MOCVD ( Metal-organicchemical vapor deposition )aALD ( Atomic layerdeposition)/ | v?Z,t/ H9 GaN MOSFET?Z51bT. P. Chow q 5lFSACMOSTGaN MOSFET q qbS. Pearton 5lF E(Ga2O3aGd2O3aSc2O3aMgOaMgCaOaSiNxaGaN)| 1j31011cm- 2 b , “ - E 3/
5、, %M q PGaN MOSFET LB ,yN C E 3/ E GaN qMOSFET q?Zb , C L 0/ aPGaN/a x (bGaN8“ “5 , P/, d ,yNAv P a,7v ? 0 9 ,H4 s q 4b “ -PGaN “5 b ia %M qa x (Evbo+ a x (B4b ,GaN q V L q bGaN q7,JWa JaV ) / aBuffer Pav #/o+E |(HEMT q7)a EV(MOSFETMIS-HEMT7)5YGaN q V L5b H,SiC qB“, GaN q9 “ 5G,+Y GaN“SiC ) q , .“ S
6、iC,yNF GaN q 5,V7v qGaN q q 54 -Gb2.3 % / b “ -GaN , g ?42jGaN ,7 ON Lb; qaRF q 5w/,GaN | ?Zb2008 M, IMECAixtronAG200 mmA AlGaN/GaN,T /GaNq qBvZ,GaN q qv? 52bN, PicogigaaNitronexaIQEaAzzurroaNTTaCovalent Materials 7?A4/6jGaN b H, 2006 M,ESSoitec“v /Picogiga 7?GaN3SopSiC“ 53, SiC,yNAM1 q, ? , 6B5 SiC
7、 *“ sj,TGaN q8/ ?Z4 B4b vSiGaN ? , s K, PAGaN q q:_ 0 sK, q ,1 200 V,V7K GaN q qT 5 =bSapphireGaN q q .“ 7K v qZ bMLSiC “ESiCGaN q qWbyN,? aGaN GaN q q?Z “GBb3 结束语GaNV 8 $IT?b GaN q8 ,C ?Z z8SiCq8 q, “GaN ,#GaN q qb;B (ZENG Yiping) 3, 1961 M 3, = + ,p V 3 =,1V Y8 qb( 10:) 48 Rashmi, Abhinav Kranti,
8、Haldar S, et al. Anaccurate charge control model for spontaneous andpiezoelectric polarization dependent two-dimensionalelectron gas sheet charge density of lattice-mismached AlGaN/ GaN HEMTs J. Solid-stateElectronics, 2002, 46 (5): 621-630. 49 Li Miao, Wang Yan. 2-D analytical model for current-vol
9、tage characteristics and transconductance ofAlGaN/GaN MOSFETs J. IEEE Trans ElectronDevices, 2008, 55( 1): 261-267. 50 Cai Y, Zhou Y, Lau K M, et al. Control of thresholdvoltage of AlGaN/GaN HEMTs by fluoride-basedplasma treatment: from depletion mode toenhancement mode J . IEEE Trans ElectronDevice
10、s, 2006, 53( 9): 2207-2215. 51 Mike Cooke. Oxide materials for III-V M OSFET Gatestacks J . Semiconductor Today, 2008, 3( 6) : 56-60. 52 M arinne Germain. IM EC enlarges nitride epiwafersJ. Compound Semiconductor, 2008: 23-25. 53 Langer R, Faure B, Boussagol A, et al. Recentachievements in SopSiC substrates for high powerand high frequency applications C . CSMANTECH Conference, 2006: 71-72.fo(ZHANG Bo) 3, 1964 M 3, q,p V 3 =,BV Y q8 q q“b +(CHEN Wangjun) 3, 1978 M3,P S/vp V, =,1VY q8 q“/ bl+(DENG Xiaochuan) 3, 1974 M3,p V, =,1Z_ z8 q qb171 o:3 Z
