1、isplaying your vision!TFT Array製程技術The Technology of TFT Array Processing中小事業部產品設計總處面板設計處AR設計部isplaying your vision!E/B and E/S TFT StructureData Line & SourcePassivation SiNxGate Line Cs Line & CstGate InsulatorGlass SubstrateGate Line & CstGlass Sub.Passivation SiNxGate InsulatorData Line & Source
2、E/B Type TFT & Cs on Common TFT Array StructureE/S Type TFT & Cs on Gate TFT Array Structureisplaying your vision!Pixel Elementsisplaying your vision!5-Photo Exposure ProcessInsulatorPassivation(1)Gate Patterning (Mask 1)(2)SiN/a-Si/n+ a-Si Deposition(3)a-Si Pattering (Mask 2)(4)S/D Metal Patterning
3、 (Mask 3)(5)Back Channel Etching for B/E structure (6)Passivation Layer Coverage (7)Contact Hole/ Window Etching (Mask 4)(8)ITO Pixel Electrode Patterning (Mask 5)isplaying your vision!a-Si TFT BCE ProfileFrom Innolux 7” 2005isplaying your vision!GE Patterning (Mask 1)isplaying your vision!GI and SE
4、 Layer Depositionisplaying your vision!SE Patterning (Mask 2)Active LayerCrossover Coverageisplaying your vision!SD Patterning (Mask 3)Data Line & Source Electrodeisplaying your vision!Back Channel EtchingData Line & Source Electrodeisplaying your vision!CH Layer DepositionPassivation Layer (SiNx)is
5、playing your vision!CH Patterning (Mask 4)Passivation Layer (SiNx)isplaying your vision!PE Patterning (Mask 5)Passivation Layer (SiNx)isplaying your vision!PVD/ Sputteringisplaying your vision!Metal and AlloyGate Source/DrainAUO Mo/AlNdTi/Al/TiMoWMo/Al/MoCMO MoN/AlNd MoN/Al/MoNHANNSTAR MoWMo/AlNd/Mo
6、Mo/AlNd/MoInnolux Al/Mo Mo/Al/MoAUO(QDI) Al/Ti Ti/Al/TiNCPT CrAlNdNMoNbCrMoNbMo/Al/Moisplaying your vision!PECVDHeat Stage Substrateisplaying your vision! 理想的閘極絕緣層(Gate insulator) 性質:良好的階梯覆蓋能力(Good Step Coverage)適中的介電常數(Dielectric Constant)高崩潰電壓 (High Breakdown Voltage)低薄膜應力 (Low Stress)與a-Si 有良好的界面
7、（Good interface with a-Si film) 理想的保護層(Passivation Layer) 性質:抗水氣能力佳(Diffusion Barrier Against Moisture)抗鹼金屬離子滲透力佳(Diffusion Barrier Against Alkali Ions)硬度佳，可承受機械性刮傷低製程溫度Thin Film Qualityisplaying your vision!SiNxParticleSiNxPinholePECVDSiNx:4000Aa-Si:1500An+a-Si:300A洗淨、a-Si/n+洗淨SPUTTERINGSD MetalGat
8、eGatea-Si / n+The Pin Holesisplaying your vision!PECVDSiNx:3000APECVD SiNx洗淨SiNxGateSiNxSiNxPinholeGatePECVDSiNx:1000ASiNxGateGateGateThe Solution of Pin Holesisplaying your vision!SiNx:4000Aa-Si:1500An+a-Si:300APECVD現製程SiNx:3000A一次成膜洗淨二次成膜洗淨SiNx:1000Aa-Si:300Aa-Si:1200An+a-Si:300APECVD原製程洗淨(GI)(SE-
9、i)(SE-n+)(SE-n+)(SE-HDR-i)(SE-LDR-i)(GI-2)(GI-1)The Solution of Pin Holesisplaying your vision!Photolithographyisplaying your vision!P.R. CoatingSubstrateSubstrateisplaying your vision!Photo ExposureSubstrateisplaying your vision!Photo StitchingSubstrateisplaying your vision!Random Shot for Stitchin
10、gisplaying your vision!Scan PhotoMask MoveStage MoveSubstrateisplaying your vision!EtchingEtching Mode Dry WetEquipment Plasma Enhanced CVD Liquid TroughEtching Rate Slow FastUniformity Good NormalThin Film A-Si, SiNx, Mo Al, Mo, Cr, ITOEtchant HCl, SF6, CF6 HCl, HNO3, CH3OOHEtch Profile Non-isotrop
11、ic IsotropicTaper Etch Vertical(ex.8090) Slope(ex.2045)Cost Expensive Cheapisplaying your vision!1.斷面形狀(Taper )Taper係指蝕刻後的斷面傾斜度，是蝕刻製程中相當重要的要求，與後續沉積之薄膜覆蓋性有相當密切的關係。覆蓋性很差(e.g.濕蝕刻)覆蓋性差(e.g.濺擊蝕刻)覆蓋性佳(e.g. RIE/PE蝕刻)等向性蝕刻非向性蝕刻控制性蝕刻Estimating for Dry Etchingisplaying your vision!2.CD Loss (Critical Dimension Loss)GlassCrSiNGlassCrSiNPR PRPVD Cr depo.CVD SiN depo.PR PatterningGlassCrPR PRA(after dev. Size)BCD Loss = B-ADry Etching(after Etching Size)Estimating for Dry Etchingisplaying your vision!The ESD GuardShorting RingESD GuardShorting Ring
