1、 ABB Month DD, YYYY | Slide 1 Introduction to IGBT ABB Switzerland Ltd, Semiconductors Jrg Berner, technical customer Support, 2012-4-18 ABB 8.30 , 2012 | Slide 2 Content IGBT and Diode Chips Characteristics Foundry Business USP HiPak Modules Characteristics Application USP StakPak Characteristics A
2、pplication Supportive tools/documents ABB 8.30, 2012 | Slide # What is an IGBT?Insulated Gate Bipolar Transistor 绝缘栅双极型晶体管 Insulated Gate Bipolar Transistor = MOS controlled bipolar transistor Turn-on (speed) is determined by the Mosfet Turn-off behavior is determined by the bipolar transistor Small
3、 reverse blocking capability (asymmetric) Manufactured as chips with a micro cell structure 100000 cells / cm2 simplified equivalent circuit GCEGCE0.05 mm 1 cm 1 mmSilicon P C N- G G E N N FS-IGBT P N 例 Infineon， Toshiba N N N N P N- C P N 例 Infineon IGBT3 G G E Trench FS-IGBT P C N- 衬底 G G E N N P（
4、 G-E threshold voltage The on-state curve exhibits a strong positive temperature coefficient Ensures good current sharing when chips are paralleled ABB 8.30, 2012 | Slide # IGBT switching characteristics IGBTs do not require snubber circuits Are optimised for inductive switching IGBTs are switched b
5、y charging/discharging the G-E capacitance RG is limiting the Gate current Simplified Gate drive circuit R G+ 1 5 VCEV G EV GI GDriver- 1 5 V ABB 8.30, 2012 | Slide # IGBT switching characteristics For the antagonist free-wheel diode the turn-on di/dt must be limited Is adjusted by RG R G+ 1 5 VCEV
6、G EV GI GDriver- 1 5 V ABB 8.30, 2012 | Slide # Diode dynamic characteristics Test circuit for inductive switching Double pulse test ABB 8.30, 2012 | Slide # Diode characteristics Dynamic characteristics strongly depend on the conditions Vr, IF and L - external circuit di/dt determined by the switch
7、 ABB 8.30, 2012 | Slide # IGBT and Diode Dies Foundry Business Dies are available as: Wafer die un-sawn Wafer die sawn on foil Die sawn and picked (in waffle pack) The chips are assembled by our OEM customers to discrete devices or power modules for a wide variety of industrial applications They are
8、 typically soldered on the backside and wire bonded on the frontside Special frontside metallization available on request, e.g. for presspack housing ABB Month DD, YYYY | Slide 13 USP chip technology ABB offers planar SPT and SPT+ technology Low gate charge Good turn-on controllability Low turn-on l
9、osses Soft turn-off and good SCSOA High turn-off ruggedness (RBSOA) Losses trade-off better or similar to trench technology Outstanding robustness due to very large Safe Operating Areas (SOA), especially for high voltage ABB Month DD, YYYY | Slide 15 Content IGBT and Diode Chips Characteristics Foun
10、dry Business USP HiPak Modules Characteristics Application USP StakPak Characteristics Application Supportive tools/documents ABB Month DD, YYYY | Slide 16 HiPak Construction Simplified cross-section gate AlN-Ceramic insulator base plate plastic casing connection to bus bars Al bond wires IGBT diode
11、 silicone gel solder Cooler Epoxy heat ABB 8.30, 2012 | Slide # Static characteristics 6.5kV/600A HiPak IGBT forward I-V characteristic On-state curve with strong positive temperature coefficient even at low current levels 6.5kV/600A Diode forward characteristic Low forward voltage drop, showing a p
12、ositive temperature coefficient below the nominal current. Crossover point at IF=400A ABB 8.30, 2012 | Slide # Static characteristics 6.5kV/600A IGBT output characteristic Ic vs VGE IGBTs are not specified to operate in linear mode (desaturated) Typical desaturation curves 5SNA 0600G650100 at Tj=125
13、C ABB Month DD, YYYY | Slide 19 IGBT turn-on di/dt controlled by Gate-Unit (RGon) Higher RGon higher Eon (lower di/dt dtdiLV / VC CVG E o nVG E o f ftd o ntrC r o s s i n g p o i n t f r o m r i s i n gI C a n d t h e e x t r a p o l a t e dd c - c u r r e n t1 0 % Ic9 0 % IC1 0 % VG E o nIC MvG Eic
14、vC Et1t2t2= t1+ 1 0 . . . 2 0 s ( v o l t a g e c l a s s d e p e n d e n t )on L L l o a dD U TA U X+ ABB 8.30, 2012 | Slide # The Effect of RG on Eon and Erec Datasheet curves of 5SNA 0600G650100 With a low Gate resistor the IGBT turns-on faster (low Eon) but commutates the corresponding free-whee
15、l diode with a higher di/dt - Irr and Erec high ABB Month DD, YYYY | Slide 21 IC=750A , VDC=3600V , Tj=125 C, Ls=280nH0400800120016002000240028003200360040000 2 4 6 8 10 12 14 16 18 20ti me usVCEV-200020040060080010001200140016001800ICA, 10*VGEVICVCEVGE6.5kV SPT+ Turn-on under Nominal Conditions Eon
16、 = 6.4J Typical turn-on of 5SNA 0750G650300 under nominal conditions (datasheet) ABB Month DD, YYYY | Slide 22 IGBT turn-off dv/dt controlled by Gate-Unit (RGoff) Higher RGoff slightly higher Eoff 90 % VG Eon90 % ICVCCVCE60 % ICVG Eof fVCEMtd o fftfVG Eon1 0 % ICICVGEICt3t4t4= t3+ 10 . 20 祍 ( vo l t
17、age cl as s de pe nd en t )L L l o a dD U TA U X+off dtdiLV / Minor control on VCEM (only L) IF ABB Month DD, YYYY | Slide 23 6.5kV SPT+ Turn-off under Nominal Conditions IC=750A , VDC=3600V , Tj=125 C, Ls=280nH-200-10001002003004005006007008000 2 4 6 8 10 12 14 16 18 20ti me usVCEV05001000150020002
18、50030003500400045005000ICA, 10*VGEVICVCEVGEEoff = 5.2J Typical turn-off of 5SNA 0750G650300 under nominal conditions (datasheet) ABB Month DD, YYYY | Slide 24 6.5kV SPT+ IGBT Turn-off Ruggedness IC=2800A , VDC=4500V , Tj= 125 C , Ls=350nH-5000500100015002000250030000.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.
19、0ti me usICA, 10*VGEV01000200030004000500060007000VCEVVCEVGENo minal Curr entPpeak = 12.5MW Turn-off of 5SNA 0750G650300 at 3,5 times nominal current ABB Month DD, YYYY | Slide 25 L L l o a dD U TA U X+IGBT Short circuit IGBT in current limiting mode - very high power dissipation Gate-Unit has to pr
20、otect the IGBT (turn-off within 10 s) VC CVG EIC EM e a s u r e m e n t i n t e r v a l o f IS Con off This was a short circuit type 1 (SC1) on off ABB Month DD, YYYY | Slide 26 6.5kV SPT IGBT SCSOA characteristics VCC = 4500V, RGoff = 3.9W, VGE = 15V, Ls = 300nH, Tj = 125 C Short circuit of 5SNA 06
21、00G650100 under specified max conditions ABB Month DD, YYYY | Slide 27 IGBT Short-circuit Short circuit is not a normal operating condition The occurring maximum junction temperatures are far above the specified maximum level The number of pulses allowed derates strongly with the maximum temperature
22、 that is reached during a pulse, as the stress accumulates over time The Gate Drive has to protect the IGBT Turn-off within 10us Soft turn-off with extra Gate resistor Clamp of Gate voltage transients e.g. for SC2 mode ABB Month DD, YYYY | Slide 28 Diode recovery L L l o a dD U TA U X+IFIr r9 0 % Ir
23、 r2 5 % Ir rd I / d td I / d ts ntr rVD CiFt0t1Q r rt1= t0+ 1 0 . . . 2 0 s ( v o l t a g e c l a s s d e p e n d e n t ) di/dt controlled by Gate-Unit and IGBT (RGon) Lower di/dt (higher RGon) lower Erec (but higher Eon) on ABB Month DD, YYYY | Slide 29 IF=750A , VDC=3600V , Tj=125 C, Ls=280nH-1000
24、-800-600-400-200020040060080010000 2 4 6 8 10 12 14 16 18 20ti me usIFA040080012001600200024002800320036004000VdiodeVIFVdio deShort current tail Low dV/dt Erec = 2.8J 6.5kV SPT+ Diode Turn-off nominal conditions Diode turn-off of 5SNA 0750G650300 under nominal (datasheet) conditions ABB Month DD, YY
25、YY | Slide 30 IF=750A , VDC=4500V , Tj=125 C, Ls=380nH-3000-2500-2000-1500-1000-50005001000150020000.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0ti me usIFA0500100015002000250030003500400045005000VdiodeVIF Vdio dePprec = 9.0MW 6.5kV SPT+ Diode Turn-off ruggedness Diode turn-off of 5SNA 0750G650300 at high di/d
26、t, datasheet Pprec 3MW ABB Month DD, YYYY | Slide 31 USP HiPak IGBT Electrical Good turn-on controllability Soft turn-off and good SCSOA High turn-off ruggedness (RBSOA) Outstanding robustness due to very large Safe Operating Areas (SOA), especially for high voltage High diode surge current capability Packaging High cycling capability Polyimide, AlN ceramic, AlSiC base Proven in demanding traction applications Stress relieve of terminal solder Terminals fixed with Epoxy
