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TOSHIBA晶体管命名.doc

1、Transistor with built-in resistance (BRT)Transistor with built-in resistance (BRT)1. RN means Toshiba transistor that has a built-in resistance2. PolarityThis section shows the polarity of a product.Products are classified into five types, as shown below, by the polarity. o 1: NPN ( small-signal )o

2、2: PNP ( small-signal )o 4: PNP+NPN3. 3 Small-signal transistor / MOSFET (S-MOS)Example of S-MOS; Small-signal transistor / MOSFET (S-MOS)1. SSM stands for Toshiba Small-Signal MOSFET2. The number of terminals3. The kind of the devices being loadedThis section shows the kind of the devices being loa

3、ded of a product.Products are classified into five types, as shown below, by the devices being loaded. o K: Nch singleo J: Pch singleo N: Nch dualo P: Pch dualo L: Nch + Pcho E: Nch + Pch (Load Switch)o H: Nch + Schottky Barrier Diodeo G: Pch + Schottky Barrier Diode4. Serial number5. Package typeIt

4、 shows the package type with the number of 2.The combinations are shown in the following table. 2 5 Package typeF S-MiniFU USMFS SSMFE ESMT TSMTU UFMTE TESMFV VESM3CT CST34 CT CST4FU USVFE ESV5TU UFVFU US6FE ES66TU UF6Small-signal transistor/MOSFET(S-MOS) (Multi-chip device)Example of Small-signal t

5、ransistor/MOSFET(S-MOS) (Multi-chip device)1. HN means Toshiba multi-chip device2. Internal connectionThis section shows the internal connection of a product.It is classified into five types by its internal circuit connection type. o 1: Point symmetrical arrangemento 2: Parallel arrangemento 3: Casc

6、ade arrangemento 4: Common use of emitter or source or baseo 7: Different types of transistors are arranged3. The kind of the devices being loadedThis section shows the kind of the devices being loaded of a product.Products are classified into A to S, as shown below, by the devices being loaded. o A

7、: PNP transistor x 2o B: PNP transistor + NPN transistoro C: NPN transistor x 2o D: general SW diodeo E: transistor + diodeo G: different types of transistorso J: P-ch MOSFET x 2o K: N-ch MOSFET x 2o L: P-ch MOSFET + Nch MOSFETo S: SBDo V: Variable Capacitance Diodes4. Serial number5. Package typeIt

8、 shows the package type. o JE: ESVo JU: USVo J: SMVo FE: ES6, ESVo FU: US6, USVo F: SM6o FS: fS6Small-signal transistor / MOSFET(S-MOS) (EIAJ registration products)Example of Small-signal transistor / MOSFET(S-MOS) (EIAJ registration products)1. The value that subtracted 1 from the total number of t

9、erminals2. S stands for Semiconductor3. The kind of circuitThis section shows the circuit configuration of a product.Circuit configurations are classified into from A to K by transistors being used. o A: a transistor of high-frequency and PNP structureo B: a transistor of low-frequency and PNP struc

10、tureo C: a transistor of high-frequency and NPN structureo D: a transistor of low-frequency and NPN structureo J: a P-ch field effective transistor ( FET )o K: an N-ch field effective transistor ( FET )4. Serial numberEIAJ registration numbers5. ChangesThe additional symbol which shows some changes.

11、Discrete IGBT/IEGTExample of Discrete IGBT/IEGT1. GT (or ST) means discrete IGBT or IEGT2. The value of direct-current collector current : Ic A The value is expressed in integral numbers.3. The voltage between a collector and an emitterThe value is expressed in a symbol, and the actual value for eac

12、h symbol is shown in table 1.4. Structure / Characteristics classification o 101 - 199: N-ch typeo 204 - 299: P-ch typeo 301 - 399: N-ch type with FRD5. ChangesThe additional symbol which shows some changesTable 1Symbol Rated voltage reference chart Symbol Rated voltage Symbol Rated voltage Symbol R

13、ated voltage Symbol Rated voltage Symbol Rated voltageZ 20V J 600V W 1800V MX 9000V NY 100000VFW 30V K 700V X 1900V NX 10000V PY 110000VGW 40V L 800V Y 2000V QX 12000V QY 120000VA 50V M 900V EX 2500V TX 15000V RY 130000VB 100V N 1000V YK 2700V YX 20000V SY 140000VQW 120V P 1100V FX 3000V FY 30000V T

14、Y 150000VC 150V Q 1200V GX 4000V GY 40000V UY 160000VD 200V R 1300V GXH 4500V HY 50000V VY 170000VE 250V S 1400V HX 5000V JY 60000V WY 180000VF 300V T 1500V JX 6000V KY 70000V XY 190000VG 400V U 1600V KX 7000V LY 80000V YY 200000VH 500V V 1700V LX 8000V MY 90000VIf a symbol consists of two letters,

15、and the second letter is W / X / Y, the second letter has the meaning as follows. ( Exception: YK, GXH )W: 1 / 10 of the first letterIn other words, this letter has the effect that makes the actual value of the first letter into 1 / 10.X: 10 times of the first letterIn other words, this letter has t

16、he effect that makes the actual value of the first letter into 10-times.Y: 100 times of the first letterIn other words, this letter has the effect that makes the actual value of the first letter into 100-times.Power transistor/Power MOSFET moduleExample of Power transistor/Power MOSFET module1. MP m

17、eans power module2. Package type, kind of deviceThe following table shows the combination of package and device for each number of 2. 2 Device Number of transistor being used Package40, 41 Bipolar S-1042 MOSFET S-10M43 Bipolar S-1244 MOSFET S-12M45 Bipolar F-1247 MOSFET4F-12M63 Bipolar S-1268 MOSFET

18、 F-12M69 Bipolar6F-123. Serial numberPower transistor and power MOSFET of SMD package with many pinsExample of Power transistor and power MOSFET of SMD package with many pins1. Package typeThis section shows the package type of a product o TPC: SOP-8 / VS-6o TPCS: TSSPO-8o TPCA: SOP-Advanceo TPCF: V

19、S-8o TPCM: TSSOP-Advanceo TPCP: PS-82. Number of lead terminals3. Circuit configurationThis section shows the circuit configuration and kind of a device.Details are shown in the following table. 3 Device Circuit configuration 3 Device Circuit configuration0 N-ch x 1 7 NPN x 21 P-ch x 1 8 PNP x 22MOS

20、FETN-ch x 2 9Bip-Tr.NPN + PNP3 P-ch x 2 A N-ch + SBD4 N-ch + P-ch BMOS + SBDP-ch + SBD5 NPN x 1 C NPN + SBD6Bip-Tr.PNP x 1 DBip + SBDBip + SBD4. Serial number5. ChangesThe additional symbol which shows some changes6. “- H“ shows that the product is of high-speed U-MOS series.Example of Power transis

21、tor and power MOSFET taht have three terminals ( EIAJ registration products : the same as small-signal produts )1. The value that subtracted 1 from the total number of terminals2. S stands for semiconductor3. CircuitThis section shows the circuit configuration of a product.Circuit configurations are

22、 classified into from A to K by transistors being used. o A : a transistor of high-frequency and PNP structureo B : a transistor of low-frequency and PNP structureo C : a transistor of high-frequency and NPN structureo D : a transistor of low-frequency and NPN structureo J : a P-ch field effective transistor ( FET )o K : an N-ch field effective transistor ( FET )4. Serial numberEIAJ registration numbers5. ChangesThe additional symbol which shows some changes.6. Detailed classification of characteristics ( hFE, etc )

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